Search results for "Contact resistance"
showing 10 items of 15 documents
Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
2020
In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device’s properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4 K to 270 K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current…
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures
2019
This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
2019
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °
Impact of cyclic mechanical stress on the electrical contact resistance between gas diffusion layer and bipolar plates in Polymer Electrolyte Membran…
2018
WHEC 2018, 22nd edition of the WORLD HYDROGEN ENERGY CONFERENCE, Rio de Janeiro, BRESIL, 17-/06/2018 - 22/06/2018; and collisions) and the mechanical clamping stress applied during the stack assembly. The internal stresses come from the shrinking and the swelling of the membrane caused by water content and the difference between the thermal expansion coefficients of the cell components. These mechanical stresses have an impact on the global fuel cell's performance and one of the most sensitive cell's components to this pressure is the Gas Diffusion Layer (GDL). This layer, assembled with the membrane electrode assembly, provides the reactant gases, evacuates the produced heat and …
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
2018
This paper reports on the modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures, studied by means of Transmission Line Model (TLM) structures, morphological and structural analyses, as well as computer simulations. In particular, the contacts exhibited an Ohmic behaviour after annealing at 800 degrees C, with a specific contact resistance rho(c) = (2.4 +/- 0.2) x 10(-5) Omega cm(2), which was associated to morphological and structural changes of both the metal layer and the interface. Interestingly, TLM analyses gave a value of the sheet resistance under the contact (R-SK = 26.1 +/- 5.0 Omega/rectangle) significantly lower than that measured out…
Multiwall carbon-nanotube interconnects: radial effects on physical models and resistance calculations for various metal substrates
2010
Based on a model with singular attractive potential of equidistant conductive cylinders, we illustrate an approach to calculate the electron spectrum of metallic multiwall carbon nanotubes (MW CNT) with an arbitrary number of coaxial layers. We compute the number of electrically active channels, N ch , in the ideal case when all MW CNT shells are contacted to the electrodes, starting from the one-electron spectrum. The dependence of N ch on the temperature and on both the innermost and outermost shells radii allows us to discuss the potential performances of MW CNT interconnects, affecting the power dissipation of integrated circuits. Our description improves over the isolated shells model,…
Characterization process to measure the electrical contact resistance of Gas Diffusion Layers under mechanical static compressive loads
2016
AEM2016. International conference on Advanced Energy Materials, University of Surrey, Guildford, ROYAUME-UNI, 12-/09/2016 - 14/09/2016; Recent research has identified the mechanical properties of the fuel cell internal components (in particular, the Gas Diffusion Layers - GDLs) as key-parameters to obtain high final performances of the generator. The mechanical compression modulus of these components, the stability of their mechanical properties with respect to temperature and humidity, and their ability to interact with water have an impact on the electrical contact resistances in the stack and, by consequence, on the overall performance of the electric generator. Reducing the losses by co…
Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects
2007
Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
2019
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950 degrees C form Ohmic contacts on moderately n-type doped 3C-SiC (N-D similar to 1 x 10(17) cm(-3)), with a specific contact resistance of 3.7 x 10(-3) Omega cm(2). The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (N-A similar …
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…