Search results for "Crystal"
showing 10 items of 22886 documents
Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5
2020
High-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques were used to investigate, as a function of the nominal Zn content in the range of 0–50%, the out-of-plane and in-plane crystallographic characteristics of Cd1−xZnxO films grown on r-plane sapphire substrates via atmospheric pressure metal–organic chemical vapor deposition. The study is conducted to search for knowledge relating to the structural details during the transition process from a rock-salt to a wurtzite structure as the Zn content increases in this CdO–ZnO system. It has been found that it is possible to obtain films exhibiting a single (001) cubic orientation with good …
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
2011
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…
Enhancement of the dielectric response through Al-substitution in La1.6Sr0.4NiO4 nickelates
2016
The structures and dielectric properties of La1.6Sr0.4Ni1−xAlxO4 (x = 0, 0.2 and 0.4) ceramics elaborated using the Pechini method were studied for the first time. The same unique tetragonal phase was found in all compounds. The lattice parameters were found using Rietveld refinement. The surface morphology characterization and elemental analysis of these samples were respectively carried out using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). A giant dielectric response was observed in these ceramics, and one dielectric relaxation was found. The substitution of nickel with aluminum results in a colossal dielectric constant value (>106). The dielectric l…
Quartz resonators for penning traps toward mass spectrometry on the heaviest ions
2020
We report on cyclotron frequency measurements on trapped 206,207Pb+ ions by means of the non-destructive Fourier-transform ion-cyclotron-resonance technique at room temperature. In a proof-of-principle experiment using a quartz crystal instead of a coil as a resonator, we have alternately carried out cyclotron frequency measurements for 206Pb+ and 207Pb+ with the sideband coupling method to obtain 21 cyclotron-frequency ratios with a statistical uncertainty of 6 × 10−7. The mean frequency ratio R¯ deviates by about 2σ from the value deduced from the masses reported in the latest Atomic Mass Evaluation. We anticipate that this shift is due to the ion–ion interaction between the simultaneousl…
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique
2018
Abstract Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
2019
Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
2017
Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…
Mathematical modelling of the feed rod shape in floating zone silicon crystal growth
2017
Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …
Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth
2019
Abstract A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.
X-ray diffraction Warren–Averbach mullite analysis in whiteware porcelains: influence of kaolin raw material
2018
ABSTRACTCompositional and microstructural analysis of mullites in porcelain whitewares obtained by the firing of two blends of identical triaxial composition using a kaolin B consisting of ‘higher-crystallinity’ kaolinite or a finer halloysitic kaolin M of lower crystal order was performed. No significant changes in the average Al2O3 contents (near the stoichiometric composition 3:2) of the mullites were observed. Fast and slow firing at the same temperature using B or M kaolin yielded different mullite contents. The Warren–Averbach method showed increase of the D110 mullite crystallite size and crystallite size distributions with small shifts to greater values with increasing firing temper…