Search results for "DOTS"

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

2013

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

2006

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.

Mid-infrared intersubband absorption in lattice-matched AlInN/GaN multiple-quantum wells

2005

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density struct…

Photo-Activated Phosphorescence of Ultrafine ZnS:Mn Quantum Dots: On the Lattice Strain Contribution

2021

We address the enhancement of orange-light luminescence of Mn-doped zinc sulfide nanoparticles (NPs) induced by exposure to UV light. Ultrafine ZnS:Mn NPs are prepared by microwave-assisted crystal growth in ethanol, without adding any dispersant agents. When exposed to UV light, their orange emission intensity undergoes a strong increase. This effect is observed when the NPs are deposited as a thin layer on a transparent substrate or dispersed in an ethanolic suspension. Such a feature was already observed on polymer- or surfactant-coated ZnS:Mn NPs and explained as a passivation effect. In this study, by coupling X-ray photoelectron, Fourier transform infrared, and electron paramagnetic r…

Application of graphene quantum dots in heavy metals and pesticides detection

2020

Graphene Quantum Dots (GQDs) were produced using electrochemical oxidation of graphite rods. Obtained GQDs were gamma-irradiated in the presence of the N atoms source, ethylenediamine. Both structural and morphological changes were investigated using UV-Vis, X-ray photoelectron and photoluminescence (PL) spectroscopy as well as atomic force microscopy. The ability of both types of dots to change PL intensity in the presence of pesticides such as malathion and glyphosate, as well as copper (II) ions was detected. These preliminary results indicated a high potential of produced GQDs to be applied as non-enzymatic PL sensors for the detection of selected pesticides and metal ions. 26th Interna…

Thermal activated carrier transfer between InAs quantum dots in very low density samples

2010

In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/¼m2. We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.

Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

2008

Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es

Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

2007

We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.

Linguistica Lettica, Nr. 7

2000

Nonequilibrium Green's function approach to strongly correlated few-electron quantum dots

2009

The effect of electron-electron scattering on the equilibrium properties of few-electron quantum dots is investigated by means of nonequilibrium Green's function theory. The ground and equilibrium states are self-consistently computed from the Matsubara (imaginary time) Green's function for the spatially inhomogeneous quantum dot system whose constituent charge carriers are treated as spin-polarized. To include correlations, the Dyson equation is solved, starting from a Hartree-Fock reference state, within a conserving (second-order) self-energy approximation where direct and exchange contributions to the electron-electron interaction are included on the same footing. We present results for…