Search results for "Diode"
showing 10 items of 469 documents
Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence
2007
The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…
Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
2020
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash
Capacitance-voltage characteristics of organic light-emitting diodes varying the cathode metal: Implications for interfacial states
2007
Capacitance-voltage $(C\text{\ensuremath{-}}V)$ characteristics of organic light-emitting diodes based on a polyphenylenevinylene have been measured by means of impedance spectroscopy. The effect of the metallic cathode (Au, Ag, Al, Mg, and Ba) was analyzed in the low-frequency region $(2\phantom{\rule{0.3em}{0ex}}\mathrm{Hz})$ of the capacitive response. The $C\text{\ensuremath{-}}V$ curves collapse into a single pattern in the low bias region, and exhibit a dependence on the cathode work function showing a crossover from positive to negative (inductive) values. The voltage corresponding to the onset of the inductive behavior shifts toward higher bias as the cathode work function increases…
<title>Changes in the temperature dependence of the dielectric constant in irradiated antiferroelectric thin films</title>
2003
A model describing the changes of the Curie-Weiss temperature in lead-zirconate thin films under neutron irradiation is proposed. The Curie-Weiss temperature in the irradiated material decreases which is connected to charges caused by neutron irradiation. The charges located near the surfaces due to Schottky effect and in the bulk of the film results in different rates of the Curie-Weiss temperature decreases with neutron fluence. However the influence of the Schottky layers seems to be more pronounced. Satisfactory agreement between the theoretical results and the experimental data is obtained for different neutron fluences.© (2003) COPYRIGHT SPIE--The International Society for Optical Eng…
High voltage vacuum-processed perovskite solar cells with organic semiconducting interlayers
2020
In perovskite solar cells, the choice of appropriate transport layers and electrodes is of great importance to guarantee efficient charge transport and collection, minimizing recombination losses. The possibility to sequentially process multiple layers by vacuum methods offers a tool to explore the effects of different materials and their combinations on the performance of optoelectronic devices. In this work, the effect of introducing interlayers and altering the electrode work function has been evaluated in fully vacuum-deposited perovskite solar cells. We compared the performance of solar cells employing common electron buffer layers such as bathocuproine (BCP), with other injection mate…
Design and realization of a portable multichannel continuous wave fNIRS
2014
A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiv…
Ionic liquid modified zinc oxide injection layer for inverted organic light-emitting diodes
2013
Abstract We have demonstrated a novel approach for fabricating efficient hybrid organic–inorganic light emitting diodes (HyLEDs) by introducing dopants into solutions processable metal oxides as an interfacial layer. The doped ZnO is prepared by adding ionic liquid (IL) to a precursor solution for the ZnO. In this way a heavily doped ZnO:ILs cathode was obtained that enhances the electron injection properties and assures a good wetting of the organic active materials.
Large area perovskite light-emitting diodes by gas-assisted crystallization:
2019
Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N 2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m −2 and a current efficiency of 7.0 cd A −1 . We use this strategy to upscale PeLEDs to large-area substrates (230 cm 2 ) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 device…
Thin Film Metal Oxides for Displays and Other Optoelectronic Applications
2020
Thin films of metal oxides have been extensively studied for various applications because of their durability, lower cost and lower toxicity, excellent chemical, magnetic, electrical and optical properties. A fusion of electrical and optical properties led to the growth of optoelectronic devices for a variety of applications including displays, light-emitting diodes, photovoltaic cells, photodetectors, optical storage, medicine, and so on. Optoelectronic devices have revolutionized our daily lives with their potentials in various aspects. An extensive research on materials for these devices has to be credited for the improvement in their performance over the years. Several metal oxide thin …
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer
2015
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.