Search results for "Diode"
showing 10 items of 469 documents
Digital performance improvements of a CdTe pixel detector for high flux energy-resolved X-ray imaging
2015
Abstract Photon counting detectors with energy resolving capabilities are desired for high flux X-ray imaging. In this work, we present the performance of a pixelated Schottky Al/p-CdTe/Pt detector (4×4) coupled to a custom-designed digital readout electronics for high flux measurements. The detector (4×4×2 mm 3 ) has an anode layout based on an array of 16 pixels with a geometric pitch of 1 mm (pixel size of 0.6 mm). The 4-channel readout electronics is able to continuously digitize and process the signals from each pixel, performing multi-parameter analysis (event arrival time, pulse shape, pulse height, pulse time width, etc.) even at high fluxes and at different throughput and energy re…
Laser tests of silicon detectors
2007
This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented.
Schottky mass measurements of stored and cooled neutron-deficient projectile fragments in the element range of 57≤Z≤84
2000
Abstract A novel method for direct, high precision mass measurements of relativistic exotic nuclei has been successfully applied in the storage ring ESR at GSI. The nuclei of interest were produced by projectile fragmentation of 930 MeV / u bismuth ions, separated in-flight by the fragment separator FRS, stored and cooled in the ESR. The mass values have been deduced from the revolution frequencies of the coasting cooled ions. We have measured 104 new mass values with a precision of about 100 keV and a resolving power of 3.5×10 5 for the neutron-deficient isotopes of the elements 57≤Z≤84 . This paper presents the experimental method, the mass evaluation and a table of the experimental mass …
Observation of a dramatic hindrance of the nuclear decay of isomeric states for fully ionized atoms
2003
Abstract The half-lives of isomeric states of fully ionized 144Tb, 149Dy and 151Er have been measured. These nuclides were produced via fragmentation of about 900 MeV/u 209Bi projectiles, separated in flight with the fragment separator (FRS) and stored in the cooler ring (ESR). The decay times of the cooled fragments have been measured with time-resolved Schottky spectrometry. We observed for the first time drastic increases of the half-lives of bare isomers by factors of up to 30 compared to their neutral counterparts. This is due to the exclusion of the strong internal conversion and electron-capture channels in the radioactive decay of these bare nuclei. The experimental results are in g…
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
2004
Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
Cryogenic operation of silicon detectors
2000
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a #uence of 3.5]1014 p/cm2 and of a p}n junction diode detector irradiated to a similar #uence. At temperatures below 130 K a recovery of charge collection e$ciency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
2004
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
2.45 GHz synchronised polarised electron injection at MAMI
1998
Abstract A semiconductor modelocked diode laser has been used to produce picosecond spin-polarised electron bunches from strained GaAsP photocathodes and inject them into MAMI, synchronised to the 2.45 GHz accelerating field. The laser meets the operational requirements of MAMI producing stable electron beams, with a polarisation purity of 72% and a transmission efficiency of 52% at an accelerated beam current of 10.1 μA.
Comparison of Silicon Photomultiplier Characteristics using Automated Test Setups
2016
Silicon Photomultipliers (SiPM) are photo-sensors consisting of an array of hundreds to thousands pixels with a typical pitch of 10-100 μm. They exhibit an excellent photon counting and time resolution. Therefore applications of SiPMs are emerging in many fields. In order to characterize SiPMs, the PRISMA Detector Lab at Mainz has established three automated test setups. Setup-A is dedicated to measure the gain, the dark count rate and the optical crosstalk probability. The temperature dependencies are characterized by operating the setup in a climate chamber. Setup-B is an optical system to measure the photon detection efficiency. Setup-C addresses the most challenging aspect of comparing …
Converting external potential fluctuations into nonzero time-average electric currents using a single nanopore
2015
The possibility of taking advantage of a fluctuating environment for energy and information transduction is a significant challenge in biological and artificial nanostructures. We demonstrate here directional electrical transduction from fluctuating external signals using a single nanopore of conical shape immersed in an ionic aqueous solution. To this end, we characterize experimentally the average output currents obtained by the electrical rectification of zero time-average input potentials. The transformation of external potential fluctuations into nonzero time-average responses using a single nanopore in liquid state is of fundamental significance for biology and nanophysics. This energ…