Search results for "EDC"
showing 10 items of 134 documents
Generation of nonlinear current-voltage characteristics. A general method
2002
International audience; A general method allowing to construct nonlinear resistors with arbitrary current-voltage (I-V) characteristics is proposed. The example of a cubic I-V characteristic is presented showing a perfect agreement between the theoretical desired resistor and its electronic realization based on analog multipliers.
Guided Surgery and Immediate Loading
2019
Computer-assisted implant dentistry can contribute for a better treatment planning, for the implementation of the implant placement, for capturing the intraoral situation, for processing data to design temporary and final prostheses, and for the manufacturing of prosthetic components.
Progress towards innovative and energy efficient logic circuits
2020
Abstract The integration of superconductive nanowire logic memories and energy efficient computing Josephson logic is explored. Nanowire memories are based on the integration of switchable superconducting nanowires with a suitable magnetic material. These memories exploit the electro-thermal operation of the nanowires to efficiently store and read a magnetic state. In order to achieve proper memory operation a careful design of the nanowire assembly is necessary, as well as a proper choice of the magnetic material to be employed. At present several new superconducting logic families have been proposed, all tending to minimize the effect of losses in the digital Josephson circuits replacing …
Lumped parameter approach of nonlinear networks with transistors
1991
In this chapter we study the lumped parameter modelling of a large class of circuits composed of bipolar transistors, junction diodes and passive elements (resistors, capacitors, inductors). All these elements are nonlinear: the semiconductor components are modelled by “large signal” equivalent schemes, the capacitors and inductors have monotone characteristics while the resistors can be included in a multiport which also has a monotone description.
Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches
2021
Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable f…
Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing
2013
Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.
Nanorings and rods interconnected by self-assembly mimicking an artificial network of neurons
2013
[EN] Molecular electronics based on structures ordered as neural networks emerges as the next evolutionary milestone in the construction of nanodevices with unprecedented applications. However, the straightforward formation of geometrically defined and interconnected nanostructures is crucial for the production of electronic circuitry nanoequivalents. Here we report on the molecularly fine-tuned self-assembly of tetrakis-Schiff base compounds into nanosized rings interconnected by unusually large nanorods providing a set of connections that mimic a biological network of neurons. The networks are produced through self-assembly resulting from the molecular conformation and noncovalent intermo…
Tb/s switching fabrics for optical interconnects using heterointegration of plasmonics and silicon photonics: The FP7 PLATON approach
2010
We present recent work that is carried out within the FP7 project PLATON on novel Tb/s switch fabric architectures and technologies for optical interconnect applications, employing heterointegration of plasmonics, silicon photonics and electronics.
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.