Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Recent advances in the development of high-resolution 3D cadmium-zinc-telluride drift strip detectors.
2020
In the last two decades, great efforts have been made in the development of 3D cadmium–zinc–telluride (CZT) detectors operating at room temperature for gamma-ray spectroscopic imaging. This work presents the spectroscopic performance of new high-resolution CZT drift strip detectors, recently developed at IMEM-CNR of Parma (Italy) in collaboration with due2lab (Italy). The detectors (19.4 mm × 19.4 mm × 6 mm) are organized into collecting anode strips (pitch of 1.6 mm) and drift strips (pitch of 0.4 mm) which are negatively biased to optimize electron charge collection. The cathode is divided into strips orthogonal to the anode strips with a pitch of 2 mm. Dedicated pulse processing analysis…
Radiation Characterization of Optical Frequency Domain Reflectometry Fiber-Based Distributed Sensors
2016
International audience; We studied the responses of fiber-basedtemperature and strain sensors related to Optical FrequencyDomain Reflectometry (OFDR) and exposed to high γ-ray dosesup to 10 MGy. Three different commercial fiber classes areused to investigate the evolution of OFDR parameters withdose, thermal treatment and fiber core/cladding composition.We find that the fiber coating is affected by both thermal andradiation treatments and this modification results in anevolution of the internal stress distribution inside the fiber that influences its temperature and strain Rayleigh coefficients. These two environmental parameters introduce a relative error up to 5% on temperature and strain…
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
2019
IEEE Transactions on Nuclear Science, 66 (7)
Wettability and compositional analysis of hydroxyapatite films modified by low and high energy ion irradiation
2008
Abstract Hydroxyapatite-like thin films on silicon substrate were deposited using atomic layer deposition and were subjected to irradiation with Ar ions accelerated through 0.6–1.2 kV as well as 2 MeV 16 O + ions. After low energy Ar irradiation a significant reduction in contact angle was observed. However, the Ca/P atomic ratio remained unchanged. No reduction in contact angle was seen for high energy 16 O + irradiation. Atomic force microscopy showed the enhancement of floral-like pattern after low energy Ar bombardment while high energy oxygen irradiation lead to raised islands on as-deposited films.
Comparison Between Point Defect Generation by $\gamma$-rays in Bulk and Fibre Samples of High Purity Amorphous ${\hbox {SiO}}_{2}$
2008
We compare the E', H(I) and Si-ODC(II) contents in a low-OH high-purity a-SiO2 either in bulk or fibre forms. We found that the H(I) centre appears during irradiation and tend to increase with the dose if the fibre contains hydrogen excess. This behaviour is believed to be one the possible reason to explain the apparent radiation-sensitivity enhancement in the blue-UV spectrum when the fibre is hydrogenated and irradiated at high dose. However for the hydrogen-treated fibres, no experimental repeatability could be evidenced in the measurements of E' and Si-ODC(II) although an acceptable agreement was still found in normal samples. This suggests a possible complex reactional mechanisms in pr…
Quantitative determination of fayalite layers on iron by CEMS
1990
In the processing of silicon iron (Fe-3%) Si), so-called ‘fayalite layers’ are formed. By CEMS, they were found to consist of an outer Fe3+-oxide layer and an inner Fe2SiO4 (fayalite) layer. Sometimes an additional wustite contribution was found. Thef-factor of fayalite was determined experimentally (ffayalite/fα-Fe=0.47±0.04) and, by use of it, the thicknesses of the layers on some silicon iron samples could be calculated from CEMS data.
Radiation defects in doped alkali halide microstructures
2000
Abstract Photostimulated luminescence (PSL) has been measured in KBr and KI systems doped with Tl and In. The size of grains in microstructures varied from 0.1 to 1.0 μm. Specifics of the photostimulated luminescence mechanisms in these systems are analysed from the viewpoint of their application in miniaturized optoelectronic and photonic devices, including optical chips.
CEMS of insulators by use of gas-flow counters
1994
Gas-flow CEMS counters are usually designed in such a manner that the sample to be investigated is inserted into the counter and serves as the backing cathode. If the sample consists of an insulating material, serious problems are expected by charging-up effects similar to those appearing in Maze counters. These problems are discussed in detail. It could be shown by experiments with glass samples that their very low surface conductivity is sufficient to allow a defined operation of such gas-flow CEMS detectors. The electric field strength between the surface of the sample and the anode has to be equal or higher than that between the entrance window and the anode. This can be ensured by an a…