Search results for "ELECTRONICS"
showing 10 items of 4340 documents
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
2007
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
Bis(arylimidazole) Iridium Picolinate Emitters and Preferential Dipole Orientation in Films
2018
The straightforward synthesis and photophysical properties of a new series of heteroleptic iridium(III) bis(2-arylimidazole) picolinate complexes are reported. Each complex has been characterized by nuclear magnetic resonance, UV-vis, cyclic voltammetry, and photoluminescent angle dependency, and the emissive properties of each are described. The preferred orientation of transition dipoles in emitter/host thin films indicated more preferred orientation than homoleptic complex Ir(ppy)3.
Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes
2017
Abstract Two-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must be accurately engineered for optimal operation. Here, we apply a transfer matrix-based source-term method to optimize light absorption and emission in 2D materials and related devices in weak and strong coupling regimes. The implemented analytical model accurately accounts for experimental results reported for representative 2D materials such as graphene and MoS2. The model has been extended to propose structures to optimize light emission by exciton recombination in…
Potential and limitations of CsBi3I10 as a photovoltaic material
2020
Herein we demonstrate the dry synthesis of CsBi3I10 both as a free-standing material and in the form of homogeneous thin films, deposited by thermal vacuum deposition. Chemical and optical characterization shows high thermal stability, phase purity, and photoluminescence centered at 700 nm, corresponding to a bandgap of 1.77 eV. These characteristics make CsBi3I10 a promising low-toxicity material for wide bandgap photovoltaics. Nevertheless, the performance of this material as a semiconductor in solar cells remains rather limited, which can be at least partially ascribed to a low charge carrier mobility, as determined from pulsed-radiolysis time-resolved microwave conductivity. Further dev…
Hole transporting materials based on benzodithiophene and dithienopyrrole cores for efficient perovskite solar cells
2018
The development of highly efficient hole transporting materials (HTMs) for perovskite solar cells (PSCs) is still one of the most thrilling research subjects in the development of this emerging photovoltaic technology. Inner ring engineering of the aromatic core of new HTMs – consisting of three fused rings endowed with four triarylamine units – reveals major performance effects over the fabricated devices. In particular, substitution of the central pyrrole ring in dithienopyrrole (DTP) by a benzene ring – benzodithiophene (BDT) – allows enhancing the power conversion efficiency from 15.6% to 18.1%, in devices employing mixed-perovskite (FAPbI3)0.85(MAPbBr3)0.15 (MA: CH3NH3+, FA: NHCHNH3+) …
Intra-center and recombination luminescence of bismuth defects in fused and unfused amorphous silica fabricated by SPCVD
2013
Abstract Photoluminescence (PL) of bismuth doped silicon dioxide excited by UV excimer lasers (ArF — 193 nm, KrF — 248 nm) and a green light laser diode (532 nm) is studied in a wide spectral band at temperatures ranging from 12 to 750 K. Two types of samples are investigated: unfused, 100 μm in thickness amorphous layer immediately deposited on the inner surface of silica substrate tube, and the same material after profusion resulted from tube collapsing to a rod by external heating. PL bands centered at 620–650 nm, 820 nm and 1400 nm wavelengths are observed in both fused and unfused samples. Under excitation by the green laser diode decay time constants for 650 nm (orange) and 1400 nm (N…
Physical properties and applications of InxGa1−xN nanowires
2014
We have successfully grown InxGa1−xN nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. InxGa1−xN is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowi…
Cathodo- and Photo- Luminescence of Silicon Rich Oxide Films Obtained by LPCVD
2012
Silicon technology dominates the electronics industry today, so it is highly desirable the development of silicon-based components compatible with silicon technology, allowing integration of electrical and optical components on a single chip. One promising approach to the development of a silicon based light emitter is Silicon Rich Oxide (SRO), also called offstoichiometric silicon oxide. The interest on the optical properties of this material has grown since it was demonstrated that SRO films subjected to high-temperature annealing exhibit efficient photoluminescence (PL) (Iacona et al., 2000; Shimizu-Iwayama et al., 1996).
Dynamic doping and degradation in sandwich-type light-emitting electrochemical cells
2012
Photoluminescence spectroscopy has been performed in situ during device operation and after switch-off on ionic transition metal complex (iTMC)-based sandwich-type light-emitting electrochemical cells (LECs). It is demonstrated that the photoluminescence of the LECs decreases with increasing operating time. For operating times up to three hours the decline in photoluminescence is fully recoverable after switching off the bias. These results imply that doping of the iTMC layer is responsible, not only, for the turn-on of LECs but also for their lifetimes.
Application of Room Temperature Photoluminescence From ZnO Nanorods for Salmonella Detection
2014
ZnO nanorods grown by gaseous-disperse synthesis are confirmed by XRD analysis to have the wurtzite crystal structure. The obtained crystallites, as found from SEM studies, are 57 +/- 9 nm in diameter and 470 +/- 30 nm long on the average. Two emission bands of photoluminescence from ZnO nanorods observed at room temperature are centered at 376 and 520 nm. A biosensitive layer is prepared by immobilization of anti-Salmonella antibodies from liquid solutions on the ZnO surface. Immobilization of the biosensitive layer onto ZnO nanorods is found to increase the intensity of PL. After further reaction with Salmonella antigens (Ags), the PL intensity is found to decrease proportional to Ag conc…