Search results for "EXCITATION"
showing 10 items of 1290 documents
Three-dimensional mapping of the B 1 field using an optimized phase-based method: Application to hyperpolarized 3 He in lungs
2010
A novel method is presented for the three-dimensional mapping of the B1-field of a transmit radio-frequency MR coil. The method is based on the acquisition of phase images, where the effective flip angle is encoded in the phase of the nonselective hard pulse excitation. The method involves the application of a rectangular composite pulse as excitation in a three-dimensional gradient recall echo to produce measurable phase angle variation. However, such a pulse may significantly increase the radio-frequency power deposition in excess of the standard acceptable SAR limits, imposing extremely long TRs (>100 msec), which would result in acquisition times significantly greater than a single brea…
Relaxation of electronic excitations in LiNbO3crystals
2001
Transient absorption both in stoichiometric and Mg doped congruent LiNbO was observed after pulsed electron beam excitation. The luminescence spectra and decay kinetics in these materials show different excitonic relaxation possibilities. The dependence on sample stoichiometry is also discussed.
Lifetime and collisional depopulation of the metastable 5D 3/2-state of Yb+
1988
The lifetime and collisional depopulation rates of the metastable 5D 3/2 state of Yb+ have been determined in a radiofrequency ion trap by observation of the fluorescence count rate after ion excitation by a short laser pulse. From measurements using He, N2 and H2 as buffer gases between 10−8 and 10−6 mbar pressure and linear extrapolation to zero pressure we obtain a lifetime of τ=52.15±1.00 ms and rate constants ofR(H2)=(1.02±0.10)×10−9 cm3/s andR(N2)=(1.78±0.19)×10−10 cm3/s. The lifetime is in fair agreement with a calculated value of 74 ms.
Luminescence of phosphorus doped silica glass
2017
This work is supported by Material Science program IMIS2 of Latvia.
Vacuum ultraviolet excitation of the 1.9-eV emission band related to nonbridging oxygen hole centers in silica
2004
Physical review / B 69, 153201 (2004). doi:10.1103/PhysRevB.69.153201
Enhancement of persistent luminescence in Ca2SnO4: Sm3+
2021
Abstract Reddish-orange persistent luminescent Ca2SnO4: 0.1% Sm3+ co-doped with 0–10% Gd3+ was prepared using solid state synthesis. The phase formation and morphology was analyzed using X-ray diffraction and scanning electron microscopy. Incorporation of Sm3+ and Gd3+ in Ca2SnO4 lattice was investigated using site-selective spectroscopy and electron paramagnetic resonance. In all samples reddish-orange persistent luminescence and photochromic effect was observed after excitation with UV as well as X-rays. The thermostimulated luminescence curves indicated that the introduction of Gd3+ increases the number of shallow traps of charges which enhance the intensity of persistent luminescence. I…
Intrinsic defect formation in amorphousSiO2by electronic excitation: Bond dissociation versus Frenkel mechanisms
2008
Two competing mechanisms of intrinsic defect formation in amorphous ${\text{SiO}}_{2}$ $(a{\text{-SiO}}_{2})$, i.e., the vacancy-interstitial (Frenkel) mechanism and Si-O bond dissociation to form silicon and oxygen dangling bonds, were compared under $\ensuremath{\gamma}$-ray electronic excitation. The Frenkel mechanism was found to be dominant. The concentrations of both kinds of defects strongly correlate with the degree of the structural disorder of $a{\text{-SiO}}_{2}$, providing experimental evidence that both types of intrinsic defect pairs are formed mainly from the strained Si-O-Si bonds. The bond dissociation mechanism is more susceptible to the structural disorder than the vacanc…
Electron beam induced optical and electronical properties of SiO 2
2000
Abstract Ionizing radiation in dielectric and optically transparent silica as well as thin SiO 2 layers produces defect luminescence as well as charge storage. A comparison of different excitation–relaxation processes like cathodoluminescence, charge injection and trapping, secondary electron field emission, and exoelectron emission leads to a generally similar excitation dose behaviour described by an electron beam saturation dose of 0.01–0.1 C/cm 2 . This suggests a correlation of these four electron excitation mechanisms likely related to the same kind of defect in glassy SiO 2 , the 2-fold-coordinated silicon Si: centre with typical electronic singlet–singlet and singlet–triplet transit…
Phonon-plasmon coupling in Si doped GaN nanowires
2016
Abstract The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon–plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A 1 (LO) mode for all samples. This behavior points to phonon–plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
2012
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.