Search results for "Electrical resistivity and conductivity"
showing 10 items of 317 documents
High power impulse magnetron sputtering of Zn/Al target in an Ar and Ar/O2 atmosphere: The study of sputtering process and AZO films
2019
Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ/2017/4 realised at the Institute of Solid State Physics, University of Latvia is greatly acknowledged.
Multi-temperature synchrotron PXRD and physical properties study of half-Heusler TiCoSb.
2010
Phase pure samples of the half-Heusler material TiCoSb were synthesised and investigated. Multi-temperature synchrotron powder X-ray diffraction (PXRD) data measured between 90 and 1000 K in atmospheric air confirm the phase purity, but they also reveal a decomposition reaction starting at around 750 K. This affects the high temperature properties since TiCoSb is semiconducting, whereas CoSb is metallic. Between 90 K and 300 K the linear thermal expansion coefficient is estimated to be 10.5 × 10(-6) K(-1), while it is 8.49 10(-6) K(-1) between 550 K and 1000 K. A fit of a Debye model to the Atomic Displacement Parameters obtained from Rietveld refinement of the PXRD data gives a Debye tempe…
Structural and Electric Properties of Sodium Lithium Niobate Ceramic Solid Solution Li0.08Na0.92NbO3
2011
A lead-free solid solution Li0.08Na0.92NbO3 was prepared by a two-stage hot-pressing technology. The structure and morphology of Li0.08Na0.92NbO3 were characterised by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The studies of electric conductivity were performed depending on temperature and frequency of electric measuring field on heating and cooling processes. These measurements revealed that the a.c. conductivity changed with the frequency according to the formula: σ(ω)=σ dc +Aω n where n < 1. These results were discussed considering the conduction mechanism as a type of polaron hopping.
Magnetic molecular metals based on the organic donor molecule BET (BET = Bis(ethylenethio)tetrathiafulvalene): The series BET2[MCI4] (M3⊕= Ga, Fe)
1997
Experimental Investigation of the Optimal Ingot Resistivity for both the Cell Performances and the Temperature Coefficients for Different Cell Archit…
2018
Compensation engineering enables the achievement of lower ingot resistivities with relatively constant performances along the ingot height. In this paper the impact of the bulk resistivity on the cell performances and the temperature coefficients is investigated for compensated and non-compensated multicrystalline silicon. Based on experimental data we show that reducing the bulk resistivity below a certain value improves the temperature coefficients but deteriorates the cell performances for two distinct cell architectures (AI-BSF and PERCT). Moreover this performance loss is not balanced out by the improved temperature coefficient for operating conditions below 70°C.
Effect of the Content and Ordering of the sp2 Free Carbon Phase on the Charge Carrier Transport in Polymer-Derived Silicon Oxycarbides
2020
The present work elaborates on the correlation between the amount and ordering of the free carbon phase in silicon oxycarbides and their charge carrier transport behavior. Thus, silicon oxycarbides possessing free carbon contents from 0 to ca. 58 vol.% (SiOC/C) were synthesized and exposed to temperatures from 1100 to 1800 °
3D modeling of doping from the atmosphere in floating zone silicon crystal growth
2017
Abstract Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
2000
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…
Epitaxial film growth and magnetic properties ofCo2FeSi
2006
We have grown thin films of the Heusler compound ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and $L{2}_{1}$ ordered growth. On ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}(11\overline{2}0)$ substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of $7∕2$ at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of $5.0{\ensuremath{\mu}}_{B}∕\mathrm{f.u.}$ at $0\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The films on $…
Structural, electrical and optical characteristics of Al-doped zinc oxide thin films deposited by reactive magnetron sputtering
2013
ZnO:Al (AZO) thin films on glass were deposited by DC reactive magnetron sputtering at approximately 300°C substrate temperature. Structural, electrical and optical properties were investigated as a function of oxygen flow. XRD data shows that AZO thin films are polycrystalline with pronounced c-axis orientation and the grain size increasing with the oxygen flow. The lowest achieved resistivity within the deposited set of samples was 7.6·10 -4 Ωcm. The transmittance of AZO films was above 80 % at 550 nm with the optical band gap between 3.4 and 3.8 eV.