Search results for "Epitaxy"
showing 10 items of 287 documents
Magnetoelectric properties of epitaxialFe3O4thin films on (011) PMN-PT piezosubstrates
2015
We determine the magnetic and magnetotransport properties of 33 nm thick ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ films epitaxially deposited by rf-magnetron sputtering on unpoled (011) ${[{\mathrm{PbMg}}_{1/3}{\mathrm{Nb}}_{2/3}{\mathrm{O}}_{3}]}_{0.68}\ensuremath{-}{[{\mathrm{PbTiO}}_{3}]}_{0.32}$ (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, strongly depend on the in-plane crystallographic direction of the epitaxial (011) ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$ film and strain. When the magnetic field is applied along [100], the magnetization loops are slanted and the sign of the longitudinal MR changes from positive to negative around the Verwey transiti…
Reconstructed bcc Co films on the surface
2007
Abstract Ultrathin epitaxial Co films on Cr ( 1 1 0 ) are examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co grows as pseudomorphic bcc layers for the first two monolayers and forms close-packed Co layers with stacking faults for thicker coverages. A periodic lattice distortion appears in two equivalent (3 × 1) reconstruction domains in combination with a regular lattice of dislocation lines oriented along the in-plane close-packed row directions bcc [ 1 1 ¯ 1 ] and bcc [ 1 ¯ 1 1 ] . The reconstruction and the occurrence of dislocation lines are caused by the epitaxial strain. The local density-of-states function is mapped by scanning tunneling …
Structural characterization and anomalous Hall effect of Rh2MnGe thin films
2015
Abstract We present the preparation, structural investigations, and transport properties of L21-ordered epitaxial Rh2MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0)MgO substrate with [ 0 1 1 ] Rh 2 MnGe ∥ [ 0 1 0 ] MgO . The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected s…
Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations
2005
Medium energy ion scattering (MEIS) has been used to measure at the scale of the monolayer the deformation profile of self-organized GaN quantum dots grown on AlN by molecular-beam epitaxy. The effect of capping the GaN dots by a thin layer of AlN has also been studied. It is shown that GaN dots are partially relaxed in every situation. Capping them with AlN has little effect on the basal plane, as expected, but strongly modifies the strain of the upper part of dots. The experimental results are compared with theoretical calculations, allowing one to conclude that GaN quantum dots experience a nonbiaxial strain, which drastically decreases when going from the basal plane up to the apex of t…
Electrical switching of perpendicular magnetization in a single ferromagnetic layer
2020
We report on the efficient spin-orbit torque (SOT) switching in a single ferromagnetic layer induced by a new type of inversion asymmetry, the composition gradient. The SOT of 6- to 60-nm epitaxial FePt thin films with a $L{1}_{0}$ phase is investigated. The magnetization of the FePt single layer can be reversibly switched by applying electrical current with a moderate current density. Different from previously reported SOTs which either decreases with or does not change with the film thickness, the SOT in FePt increases with the film thickness. We found the SOT in FePt can be attributed to the composition gradient along the film normal direction. A linear correlation between the SOT and th…
Critical currents and micro-structure in YBa2Cu3O7−δ thin films
1996
In an attempt to clarify the origin of the large critical current densitiesJ c observed in Laser Ablated and Sputtered YBa2Cu3O7−δ (YBCO) thin films, we make a systematic study of the low temperatureJ c in samples carefully analysed using STM and AFM.J c (B) is determined from torque-magnetometry performed in ring-patterned thin films. Epitaxial YBCO films nucleate in c-axis oriented single-crystalline islands with sizes ranging between 200 and 700 nm. We show thatJ c can be mainly explained by vortex pinning localised in the island boundaries.
Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy
2010
Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.
Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films
2015
The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can b…
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO
2009
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in $n$-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.
Optimal ferromagnetically-coated carbon nanotube tips for ultra-high resolution magnetic force microscopy
2013
Using single-walled carbon nanotubes homogeneously coated with ferromagnetic metal as ultra-high resolution magnetic force microscopy probes, we investigate the key image formation parameters and their dependence on coating thickness. The crucial step of introducing molecular beam epitaxy for deposition of the magnetic coating allows highly controlled fabrication of tips with small magnetic volume, while retaining high magnetic anisotropy and prolonged lifetime characteristics. Calculating the interaction between the tips and a magnetic sample, including hitherto neglected thermal noise effects, we show that optimal imaging is achieved for a finite, intermediate-thickness magnetic coating, …