Search results for "Epitaxy"
showing 10 items of 287 documents
Structure and properties of epitaxial ferroelectric PbLu0.5Nb0.5O3thin films
2001
Abstract Epitaxial thin film heterostructures of PbLu0.5Nb0.5O3 (PLuN) and La0.5Sr0.5CoO3 (LSCO) were deposited by in situ pulsed laser ablation onto MgO and LaAlO3 (100) substrates. The formation of crystalline phases, epitaxy, film-electrode-substrate orientation relationships, crystal perfection and chemical order were studied by x-ray diffraction. The structural properties were found to depend on the deposition conditions and on the substrate. The perovskite PLuN films were pseudocubic and epitaxial, with (001) planes parallel to the substrate surface. At room temperature, Au/PLuN/LSCO capacitors exhibited ferroelectric behavior and zero-field dielectric permittivity about e ≅ 210–260, …
Structural and in depth characterization of newly designed conducting/insulating TiN O /TiO2 multilayers obtained by one step LP-MOCVD growth
2001
Abstract TiNxOy/TiO2 multilayers have been grown by LP-MOCVD using titanium isopropoxide (TIP) precursor during the whole growth, but with an ammonia flow interrupted for the TiO2 layers. The one step growth process used to grow these structures allowed to stack the conducting and insulating layers without any growth breakdown. SIMS and TEM analyses showed the presence of an alternated insulating/conducting layers structure. Moreover, electrical measurements allowed to measure the dielectric part of insulating TiO2 stacked in these structures, whose permittivity was found to be about 80 for a MOS structure. Thus, such multilayers may lead to very promising applications in the microelectroni…
Ferroelectric Properties and Crystal Structure of YBa2Cu3O7/BaxSr(1−x)TiO3 Heterostructures
1997
ABSTRACTEpitaxial YBa2Cu3O7/Ba0.5Sr0.5TiO3 (YBCO/BST) and YBCO/BaTiO3 (BTO) heterostructures were prepared by dc and rf sputtering on SrTiO3 and MgO substrates. The YBCO/BTO bilayers exhibit an inductive superconducting transition temperature of 85 K and the ferroelectric phase transition of BST shows a Curie-Weiss temperature of 310 K. Microstructure was investigated by x-ray-diffraction and atomic force microscopy. In this work we also studied the insulator's conductivity and the contribution of domain walls to permittivity.
Near-coincidence lattice method for the determination of epitaxy strains during oxidation of metals
2000
Abstract A theoretical method is proposed to evaluate the strains due to epitaxy between a metal and its oxide. Based on Bollmann’s approach of two adjoining grains, it uses the quantitative texture analysis of the two materials separated by the phase boundary. Our study of the Zr/ZrO 2 and Mo/MoO 3 systems reveals strong correlations between the criterion of best fit proposed by Bollmann and the orientation distribution function obtained by a quantitative texture analysis. The results of this study are used in a thermo-mechano-chemical simulation of the oxidation process of zirconium, which leads to this observation: two different zirconia orientations induce two different oxidation kineti…
Pressure and temperature dependence of the band-gap in CdTe
2003
In this paper we report on isothermal compression measurements (up to 5 GPa and 500 K) of the optical absorption edge of 1 μm epitaxial layers of CdTe growth by metalorganic chemical vapor deposition (MOCVD) on GaS substrates. The isothermal blue shift under pressure of the direct energy gap (Γ v 15 → Γ c 1 ) in the zinc-blende phase is about 7.1 × 10 -2 eV GPa -1 and is found to be independent of temperature within the experimental errors. The isobaric red shift in the stability range of the zinc-blende phase is about -3.76 × 10 -4 eV K -1 . Regarding the phase transitions, no discontinuity in the energy gap has been found in the narrow pressure range where the cinnabar phase can be presen…
Epitaxial growth and properties of (001)-oriented TbBaCo2O6−δ films
2008
Thin epitaxial films of TbBaCo2O6−δ cobaltites have been synthesized using pulsed laser deposition. It was found that the film properties are extremely sensitive to the oxygen pressure during deposition, temperature of the substrate, and the cooling rate. Growth parameters were optimized for δ≈0.5 films with ordered Tb and Ba ions, as well as oxygen vacancies. The properties of these c-axis oriented films are similar to bulk TbBaCo2O5.5: they show a metal-insulator phase transition at TMI≈350 K, ferromagnetic order below TC=285 K, and antiferromagnetism at T<Ti≈230 K.
Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires
2007
6 páginas, 4 figuras, 1 tabla.-- PACS 62.50.+ p, 73.21.Hb, 78.55.Cr, 78.67.Lt, 81.15.Hi, 81.16.Dn
Photoluminescence and Raman spectroscopy of MBE‐grown InN nanocolumns
2008
InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E2h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface …
Excitonic Transitions in Homoepitaxial GaN
2001
The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures
2002
5 páginas, 4 figuras.