Search results for "Epitaxy"
showing 10 items of 287 documents
Core-shell Zn-doped TiO2-ZnO nanofibers fabricated via a combination of electrospinning and metal-organic chemical vapour deposition
2010
Zn-doped TiO2 nanofibers shelled with ZnO hierarchical nanoarchitectures have been fabricated combining electrospinning of TiO2 (anatase) nanofibers and metal-organic chemical vapor deposition (MOCVD) of ZnO. The proposed hybrid approach has proven suitable for tailoring both the morphology of the ZnO external shell as well as the crystal structure of the Zn-doped TiO2 core. It has been found that the Zn dopant is incorporated in calcined electrospun nanofibers without any evidence of ZnO aggregates. Effects of different Zn doping levels of Zn-doped TiO2 fibers have been scrutinized and morphological, structural, physico-chemical and optical properties evaluated before and after the hierarc…
Electrochemical Investigation of Lithium Intercalation in MOCVD Derived Nanostructured Anatase/Rutile TiO2
2011
In this paper we report on the lithium reversible storage in titanium dioxide (TiO2) prepared by metal-organic chemical vapor deposition (MOCVD). Electrochemical properties in terms of lithium reversible insertion depend on the deposited microstructure. For thick films deposited on silicon wafer electrochemical activity of the anatase type of TiO2 is registered in the potential range 1.8-2.1 V vs. Li. For thinner films the intercalation reaction takes place in two potential ranges: 1.8-2.1 V vs. Li and below 1.4 V vs. Li. The second electroactivity range is attributed to lithium insertion into rutile. We found that the decrease of the lower potential limit (0.5 V instead of commonly used 1 …
Sb-implanted ZnO ultra-thin films
2017
Mild heating of the Zn(C5F6HO2)(2)center dot 2H(2)O center dot CH3(OCH2CH2)(2)OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (101) oriented, crystals. UV-vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.
MBE growth and properties of low-density InAs/GaAs quantum dot structures.
2011
We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaAs upper confining layers. Owing to these particular design and growth parameters, quantum dot densities are in the order of 4-5x109 cm-2 with emission wavelengths ranging from 1.20 to 1.33 µm at 10 K, features that make these structures interesting for single-photon operation at telecom wavelength. High resolution structural techniques show that In content and composition profiles in the structures depend on …
Numerical study of the ZnO growth by MOCVD
2004
Abstract In order to analyze the growth of zinc oxide by metalorganic chemical vapor deposition, a numerical model has been developed to simulate the gas flow in a horizontal reactor. A two-inlet system, one for the Zn precursor and the other for the oxygen one, has been studied in the framework of this numerical simulation. This model takes into account the momentum conservation equation coupled with the heat transfer and mass transport of chemical species. Different Zn precursors, DiethylZinc (DEZn), DimethylZinc (DMZn) and DimethylZinc-TriethylAmine (DMZn-TEA) and oxygen precursors, ( tert -butanol, iso -propanol and acetone) as well as carrier gases (H 2 and N 2 ) have been considered. …
Structure and luminescence of GaN layers
2001
Abstract GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.
Highly Reduced Saturation Magnetization in Epitaxially Grown Ferrimagnetic Heusler Thin Films
2019
The key of spintronic devices using the spin-transfer torque phenomenon is the effective reduction of switching current density by lowering the damping constant and the saturation magnetization while retaining strong perpendicular magnetic anisotropy. To reduce the saturation magnetization, particular conditions such as specific substitutions or buffer layers are required. Herein, we demonstrate highly reduced saturation magnetization in tetragonal D022 Mn3–xGa thin films prepared by rf magnetron sputtering, where the epitaxial growth is examined on various substrates without any buffer layer. As the lattice mismatch between the sample and the substrate decreases from LaAlO3 and (LaAlO3)0.3…
ZnO films grown by MOCVD on GaAs substrates: Effects of a Zn buffer deposition on interface, structural and morphological properties
2009
Abstract Integration of ZnO with the well-developed GaAs technology presents several aspects that need to be previously analyzed and considered. The large lattice mismatch between ZnO and GaAs and its different crystallographic structure lead to many structural defects. In addition, their potential chemical reactivity is another source of complexity and an academic challenge. Recently some interesting contributions on this subject have been carried out by Liu and co-workers. As an additional step to the knowledge of the ZnO/GaAs heterostructure, we have deepened on the study of the morphology and orientation of ZnO thin films grown by atmospheric pressure metal-organic chemical vapour depos…
MOCVD growth of CdTe on glass: analysis of in situ post-growth annealing
2004
Abstract In this paper, we analyse the growth by MOCVD of CdTe on glass substrates using in situ post-growth annealing. First, in order to perform a systematic study, polycrystalline layers of CdTe were deposited by MOCVD on glass substrates. The structure and morphology of the layers was investigated as a function of different growth parameters, temperature, VI/II precursor molar ratio and substrate position on the susceptor. An activation energy of Ek=20.7 kcal/mol was obtained from the experimental data. In order to better understand the process and the effects of different growth parameters, a numerical model that simulated the gas flow in the reactor, was developed. Secondly we analyse…
Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe
2002
Abstract In order to analyse the epitaxial growth by metalorganic chemical vapour deposition (MOCVD) of mercury telluride, HgTe, a 2D numerical model has been developed to simulate the gas flow in a horizontal MOCVD reactor. This model takes into account the Navier–Stokes equations coupled with the heat transfer and mass transport of chemical species. For the mathematical resolution of the governing equations a commercial solver, which can be run in a conventional personal computer, has been used. The study carried out presents a discussion about the dominant growth regime in a MOCVD growth as a function of different parameters: substrate temperature, total flow, partial pressure of precurs…