Search results for "Epitaxy"
showing 10 items of 287 documents
Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates
2003
Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…
Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD
2004
Abstract We report on the growth of CdTe layers directly onto (0 0 0 1) sapphire substrates by MOCVD. The structure and morphology of the layers have been investigated as a function of growth temperature and II/VI precursor molar ratio by X-ray diffraction and scanning electron microscopy. The texture of the samples has revealed the existence of a temperature threshold, with higher growth temperatures resulting on completely (1 1 1) oriented layers. Some of these layers contained microtwins, as indicated by the extra peaks in the {4 2 2} Φ scans, leading to the existence of two different domains. The structural quality of each domain, as well as of the sample as a whole, has been determined…
Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire
1997
Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…
Molybdenum Clusters on a TiO2(110) Substrate Studied by Density Functional Theory.
2009
International audience; A theoretical study on molybdenum clusters adsorbed on a rutile TiO2(110) substrate is reported. Using density functional theory, equilibrium geometries, atomic charges, and total energies have been calculated for clusters containing up to five Mo atoms. Isolated Mo adatoms are strongly oxidized and repel each other. The Mo oxidation state is considerably lowered as soon as the first short Mo−Mo bond is formed. The relative stability of different cluster geometries can be understood from the competition between Mo−Mo and Mo−O bonding. Some low-energy structures for two and three Mo atoms involve large displacements of a substrate oxygen atom. The most stable five-ato…
Solar blind AlGaN photodetectors with a very high spectral selectivity
2006
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
Fabrication and Characterization of Epitaxial NbN/TaN/NbN Josephson Junctions Grown by Pulsed Laser Ablation
2009
We report fabrication and characterization of epitaxial NbN/TaN/NbN Josephson junctions grown by pulsed laser ablation. These SNS junctions can be used as elements of rapid-single-flux-quantum (RSFQ) logic, which is a promising technology for high speed digital electronic devices. The NbN/TaN/NbN trilayer films were prepared on a single crystal MgO substrate by pulsed laser ablation, and patterned into junctions using a novel process utilizing e-beam lithography, chemical vapor deposition and e-beam evaporation. The quality of junctions was tested by measuring the temperature dependence of the junctions' IcRn values, observed to be quite close to theoretical values.
Bi2Sr2Ca2Cu3O10+δ based Josephson junctions and SQUIDs
1996
Josephson junctions and SQUIDs on SrTiO3 bicrystal substrates were prepared from epitaxial Bi2Sr2Ca2Cu3O10+δ thin films with critical temperatures around 95K. The current-voltage characteristics are well described by the resistively and capacitively shunted junction model.I c R n products of 50μV at 77K and 0.7m V at 4.2K have been reached. TheI c (B) dependence is symmetric toB=0 with anI c suppression of 90% in the first minimum. Nevertheless it turns out, that the junctions are inhomogeneous on a μm scale. The flux-voltage transfer function of a SQUID reached 2.7μV/Ф0 at 78K.
Anisotropic chemical etching of semipolar \{10\bar {1}\bar {1}\}\mbox {/} \{10\bar {1}{+}1\} ZnO crystallographic planes: polarity versus dangling bo…
2009
ZnO thin films grown by metal?organic vapor phase epitaxy along the nonpolar direction and exhibiting semipolar facets have been chemically etched with HCl. In order to get an insight into the influence of the ZnO wurtzite structure in the chemical reactivity of the material, Kelvin probe microscopy and convergent beam electron diffraction have been employed to unambiguously determine the absolute polarity of the facets, showing that facets are unstable upon etching in an HCl solution and transform into planes. In contrast, facets undergo homogeneous chemical etching perpendicular to the initial crystallographic plane. The observed etching behavior has been explained in terms of surface oxy…
Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques
2015
The growth selectivity and structural quality of GaN nanowires obtained by plasma-assisted molecular beam epitaxy on pre-patterned GaN(0001) templates are investigated by means of non-destructive techniques. Optimum control over the nanowire arrangement and size requires a pitch between the mask apertures below twice the diffusion length of Ga atoms. Lower pitches, however, seem to slightly diminish the structural quality of the material, as revealed by the increase of the Raman peak linewidths. The photoluminescence spectra of the nanowires show a considerable presence of basal plane stacking faults, whose density increases for decreasing nanowire diameter. The capabilities of Kelvin probe…
Strain induced renormalization of transport properties in UPt3 thin films
1996
The growth of sputter deposited UPt3 thin films on Al2O3 (1012), LaAlO3 (111) and SrTiO3 (111) was investigated. We found strongly 0001-textured growth of UPt3 in a small compositional range of 23–25% uranium content. For Al2O3-and LaAlO3-substrates no in-plane order could be observed whereas epitaxial growth was initiated on SrTiO3 (111): The growth can be identified as Vollmer-Weber like resulting in the formation of large lateral strain as a consequence of the growth mode and a lattice misfit of −4.3% between UPt3 (0001) and SrTiO3 (111). Strong deviations from the typical heavy-fermion characteristics in electronic transport properties like resistivity, magnetoresitivity and Hall-effect…