Search results for "Gate"

showing 10 items of 1811 documents

Permutable subnormal subgroups of finite groups

2009

The aim of this paper is to prove certain characterization theorems for groups in which permutability is a transitive relation, the so called PT -groups. In particular, it is shown that the finite solvable PT -groups, the finite solvable groups in which every subnormal subgroup of defect two is permutable, the finite solvable groups in which every normal subgroup is permutable sensitive, and the finite solvable groups in which conjugatepermutability and permutability coincide are all one and the same class. This follows from our main result which says that the finite modular p-groups, p a prime, are those p-groups in which every subnormal subgroup of defect two is permutable or, equivalentl…

Normal subgroupClass (set theory)PermutableMathematics::CombinatoricsGeneral MathematicsSubnormalModular p-groupGrups Teoria deCharacterization (mathematics)Prime (order theory)PT -groupSubnormal subgroupCombinatoricsMathematics::Group TheorySolvable groupPermutable primeÀlgebraAlgebra over a fieldMATEMATICA APLICADAMathematicsConjugate-Permutable
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Il legato pontificio tra norma, dottrina e prassi (sec. V-XII): il caso della Sicilia e la questione dell’Apostolica Legazia

2022

Sin dall'Alto Medioevo, il papa inviò delegati papali in Sicilia per amministrare la chiesa locale. Con l'arrivo dei Normanni nell'XI secolo, l'invio dei legati apostolici fu fortemente osteggiato dal potere secolare. Per questo motivo, le sfere di competenza tra il papa e i normanni furono definite da accordi e concessioni reciproche: il punto di partenza fu il rilascio del privilegio dell'Apostolica Legazia (1098). La prima parte della tesi analizza la natura e le funzioni dei delegati papali inviati in Sicilia nell'Alto Medioevo. La seconda parte si concentra sullo studio degli atti giuridici che delimitarono i poteri del papato e dei normanni sulla chiesa locale. Since the early Middle …

Norman SicilyHistoire du droit médiévalSicile normandeApostolic LegateLégats apostoliqueSettore IUS/19 - Storia Del Diritto Medievale E ModernoSicile médiévaleMedieval Legal HistoryLegati ApostoliciDroit canonique médiévalSicilia NormannaSicilia medievaleDiritto medievaleDiritto canonico medievaleDroit médiévalMedieval Canon LawMedieval SicilyMedieval LawStoria del diritto medievale e moderno
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The Concept of Authority

1995

There is a general agreement that the concept of practical authority can be analysed as a right to impose obligations or commands on its subject and that this right is correlated with a duty to obey. Usually it is also implied that these rights and duties are mutually recognized. Thus authority is considered as a consensus-based notion. But it is important to notice that political authorities can have other functions, too. They can change the normative positions of their subjects by permitting, authorizing, delegating, exercising a veto, by declaring acts valid or invalid, etc. They can create and change definition rules, e.g. determine the values of units of payment. They are often authori…

Noticemedia_common.quotation_subjectVetoNormativeDelegated authorityBusinessPrimary authorityPolitical authoritiesTraditional authorityDutymedia_commonLaw and economics
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Multiple register synchronization with a high-speed serial link using the Aurora protocol

2013

In this work, the development and characterization of a multiple synchronous registers interface communicating with a high-speed serial link and using the Aurora protocol is presented. A detailed description of the developing process and the characterization methods and hardware test benches are also included. This interface will implement the slow control busses of the digitizer cards for the second generation of electronics for the Advanced GAmma Tracking Array (AGATA).

Nuclear and High Energy PhysicsComputer scienceSerial communicationFirmwarebusiness.industryInterface (computing)Process (computing)computer.software_genreSynchronizationNuclear Energy and EngineeringElectronic engineeringAGATAElectrical and Electronic EngineeringField-programmable gate arraybusinessProtocol (object-oriented programming)computerComputer hardware2012 18th IEEE-NPSS Real Time Conference
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Semi-Empirical Model for SEGR Prediction

2013

The underlying physical mechanisms in single event gate rupture (SEGR) are not known precisely. SEGR is expected to occur when the energy deposition due to a heavy ion strike exceeds a certain threshold simultaneously with sufficient electric field across the gate dielectric. Typically the energy deposition is described by using the linear energy transfer (LET) of the given ion. Previously the LET has been demonstrated not to describe the SEGR sufficiently. The work presented here introduces a semi-empirical model for the SEGR prediction based on statistical variations in the energy deposition which are described theoretically.

Nuclear and High Energy PhysicsEngineeringWork (thermodynamics)ta114business.industryGate dielectricLinear energy transferMechanicsIonNuclear Energy and EngineeringElectric fieldDeposition (phase transition)Electrical and Electronic EngineeringbusinessEvent (particle physics)Energy (signal processing)SimulationIEEE Transactions on Nuclear Science
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Optical Link Card Design for the Phase II Upgrade of TileCal Experiment

2011

This paper presents the design of an optical link card developed in the frame of the R&D activities for the phase 2 upgrade of the TileCal experiment. This board, that is part of the evaluation of different technologies for the final choice in the next years, is designed as a mezzanine that can work independently or be plugged in the optical multiplexer board of the TileCal backend electronics. It includes two SNAP 12 optical connectors able to transmit and receive up to 75 Gb/s and one SFP optical connector for lower speeds and compatibility with existing hardware as the read out driver. All processing is done in a Stratix II GX field-programmable gate array (FPGA). Details are given on th…

Nuclear and High Energy PhysicsEngineeringbusiness.industryFirmwareOptical linkElectrical engineeringPower integritycomputer.software_genreMultiplexerUpgradeNuclear Energy and EngineeringGate arrayStratixElectrical and Electronic EngineeringbusinessField-programmable gate arraycomputerComputer hardwareIEEE Transactions on Nuclear Science
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Development of a Reference Database for Beta-Delayed Neutron Emission

2021

Beta-delayed neutron emission is important for nuclear structure and astrophysics as well as for reactor applications. Significant advances in nuclear experimental techniques in the past two decades have led to a wealth of new measurements that remain to be incorporated in the databases. We report on a coordinated effort to compile and evaluate all the available beta-delayed neutron emission data. The different measurement techniques have been assessed and the data have been compared with semi-microscopic and microscopic-macroscopic models. The new microscopic database has been tested against aggregate total delayed neutron yields, time-dependent group parameters in 6-and 8-group re-present…

Nuclear and High Energy PhysicsFissile material010308 nuclear & particles physicsNeutron emissionAstrophysics::High Energy Astrophysical PhenomenaAggregate (data warehouse)Nuclear TheoryNuclear dataFOS: Physical sciences[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesNuclear physicsBeta (plasma physics)0103 physical sciencesReference databaseEnvironmental scienceNuclear Experiment (nucl-ex)010306 general physicsNuclear ExperimentDelayed neutronNuclear Experiment
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Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

2011

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.

Nuclear and High Energy PhysicsHardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateHigh densityFlash (photography)Nuclear Energy and EngineeringLogic gateAbsorbed doseElectronic engineeringOptoelectronicsHeavy ionElectrical and Electronic EngineeringbusinessDegradation (telecommunications)IEEE Transactions on Nuclear Science
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Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessIEEE Transactions on Nuclear Science
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Radiation tolerance of NROM embedded products

2010

Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for b…

Nuclear and High Energy PhysicsMaterials scienceONOradiation effectbusiness.industryFloating gate memorieRadiationSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materialaw.inventionNon-volatile memoryCapacitorRadiation toleranceNuclear Energy and EngineeringlawLogic gatePhysical phenomenaOptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardeningradiation hardening
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