Search results for "Gate"
showing 10 items of 1811 documents
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
2019
IEEE Transactions on Nuclear Science, 66 (7)
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…
The Mu3e Data Acquisition
2020
The Mu3e experiment aims to find or exclude the lepton flavour violating decay $\mu^+\to e^+e^-e^+$ with a sensitivity of one in 10$^{16}$ muon decays. The first phase of the experiment is currently under construction at the Paul Scherrer Institute (PSI, Switzerland), where beams with up to 10$^8$ muons per second are available. The detector will consist of an ultra-thin pixel tracker made from High-Voltage Monolithic Active Pixel Sensors (HV-MAPS), complemented by scintillating tiles and fibres for precise timing measurements. The experiment produces about 100 Gbit/s of zero-suppressed data which are transported to a filter farm using a network of FPGAs and fast optical links. On the filte…
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
2012
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
2023
The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed
First observation and branching fraction and decay parameter measurements of the weak radiative decay Xi0 -> Lambda e+ e-
2007
The weak radiative decay Xi0 --> Lambda e+e- has been detected for the first time. We find 412 candidates in the signal region, with an estimated background of 15 +/- 5 events. We determine the branching fraction B(Xi0 --> Lambda e+e-) = [7.6 +/- 0.4(stat) +/- 0.4(syst) +/- 0.2(norm)] x 10^{-6}, consistent with an internal bremsstrahlung process, and the decay asymmetry parameter alpha_{XiLambdaee} = -0.8 +/- 0.2, consistent with that of Xi0 --> Lambda gamma. The charge conjugate reaction Xi0_bar --> Lambda_bar e+e- has also been observed.
Proton irradiation-induced reliability degradation of SiC power MOSFET
2023
The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed
Probing the gateway to superheavy nuclei in cranked relativistic Hartree-Bogoliubov theory
2003
The cranked relativistic Hartree+Bogoliubov theory has been applied for a systematic study of the nuclei around 254No, the heaviest nuclei for which detailed spectroscopic data are available. The deformation, rotational response, pairing correlations, quasi-particle and other properties of these nuclei have been studied with different relativistic mean field (RMF) parametrizations. For the first time, the quasi-particle spectra of odd deformed nuclei have been calculated in a fully self-consistent way within the framework of the RMF theory. The energies of the spherical subshells, from which active deformed states of these nuclei emerge, are described with an accuracy better than 0.5 MeV fo…
A general overview of the organocatalytic intramolecular aza-Michael reaction
2014
The organocatalytic intramolecular aza-Michael reaction gives access to enantiomerically enriched nitrogen-containing heterocycles in a very simple manner. Enals, enones, conjugated esters and nitro olefins have been employed as Michael acceptors, while moderate nitrogen nucleophiles such as sulphonamides, carbamates and amides have been shown to be appropriate Michael donors in this type of reaction. Additionally, the process has been performed under both covalent and non-covalent catalysis, with diaryl prolinols, imidazolidinones, thioureas and chiral binol phosphoric acids being the most frequently used catalysts. The level of efficiency reached with this protocol is demonstrated by the …