Search results for "Hall Effect"
showing 10 items of 702 documents
Time-resolved coherent anti-Stokes Raman-scattering measurements of I2 in solid Kr: vibrational dephasing on the ground electronic state at 2.6-32 K.
2005
Time-resolved coherent anti-Stokes Raman-scattering (CARS) measurements are carried out for iodine (I2) in solid krypton matrices. The dependence of vibrational dephasing time on temperature and vibrational quantum number v is studied. The v dependence is approximately quadratic, while the temperature dependence of both vibrational dephasing and spectral shift, although weak, fits the exponential form characteristic of dephasing by pseudolocal phonons. The analysis of the data indicates that the frequency of the pseudolocal phonons is approximately 30 cm(-1). The longest dephasing times are observed for v = 2 being approximately 300 ps and limited by inhomogeneous broadening. An increase in…
Phonon superradiance and phonon laser effect in nanomagnets
2004
We show that the theory of spin-phonon processes in paramagnetic solids must take into account the coherent generation of phonons by the magnetic centers. This effect should drastically enhance spin-phonon rates in nanoscale paramagnets and in crystals of molecular nanomagnets.
Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
2013
We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…
Energy of excitons and acceptor–exciton complexes to explain the origin of ultraviolet photoluminescence in ZnO quantum dots embedded in a SiO2 matrix
2011
Abstract Assuming finite depth and within the effective mass approximation, the energies of exciton states and of the acceptor–exciton complexes confined in spherical ZnO quantum dots (QDs) embedded in a SiO2 matrix are calculated using a matrix procedure, including a three-dimensional confinement of carrier in the QDs. This theoretical model has been designed to illustrate the two emission bands in the UV region observed in our experimental Photoluminescence spectrum (PL), with the first emission band observed at 3.04 eV and attributed to the bound ionized acceptor–exciton complexes, and the second one located at 3.5 and assigned to the free exciton. Our calculations have revealed a good a…
High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
2009
We report here first magneto-photoluminescence investigations under high pressure up to 6 GPa on III-VI layered semiconductor InSe. Both diamagnetism and magnetic field induced gap opening driven by Landau quantization became observable by using a 60 T pulsed magnet. The pressure-induced enhancement of the diamagnetic coefficient is consistent with the increase of the dielectric constant under pressure while the evolution of the linear coefficient is consistent with a slight increase of the electron effective mass up to 4 GPa and a direct-to-indirect conduction-band crossover around that pressure.
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures
2002
5 páginas, 4 figuras.
Photoluminescence in silicon-doped n-indium selenide
1994
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.
Different temperature renormalizations for heavy and light-hole states of monolayer-thick heterostructures
2000
Abstract We have found that the energy splitting between peaks in the linearly polarized emission from the cleaved surface of an InAs/GaAs monolayer structure triples with increasing temperature in the range from 5 to 150 K. For each polarization the main emission line corresponds to the radiative recombination of either heavy or light-hole excitons bound to the monolayer. The striking temperature behavior of the peak energies originates from the different hole–phonon coupling due to the much larger penetration of the light-hole envelope function into the GaAs. We prove this assertion by confining the light holes to the InAs plane with a strong magnetic field, which leads to a reduction of …
Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions
2002
5 páginas, 4 figuras.-- PACS: 73.21.La;73.63.Kv;78.55.Cr;78.67.Hc;S7.12.-- Trabajo presentado en la 7th International Conference on Optics and Excitons in Confined Systems (OECS7).
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.