Search results for "Hardware_MEMORYSTRUCTURES"
showing 10 items of 64 documents
Progress towards innovative and energy efficient logic circuits
2020
Abstract The integration of superconductive nanowire logic memories and energy efficient computing Josephson logic is explored. Nanowire memories are based on the integration of switchable superconducting nanowires with a suitable magnetic material. These memories exploit the electro-thermal operation of the nanowires to efficiently store and read a magnetic state. In order to achieve proper memory operation a careful design of the nanowire assembly is necessary, as well as a proper choice of the magnetic material to be employed. At present several new superconducting logic families have been proposed, all tending to minimize the effect of losses in the digital Josephson circuits replacing …
The effects of mobile banking application user satisfaction and system usage on bank-customer relationships
2016
This study examines mobile banking (m-banking) application usage in Finland by linking it with customer-bank relationship development. Specifically, we examine how usage is related to relationship commitment, overall satisfaction, intention to recommend the bank and future intentions to remain with the bank. A survey was used to collect data from experienced mbanking application users. In total, 273 valid responses were received. The results support the hypotheses and reveal that user satisfaction with m-banking application usage has a strong positive association with usage of m-banking applications. Usage, in turn, was positively related to all examined bank-customer relationship related v…
Internet banking adoption among mature customers: early majority or laggards?
2003
Finland is a world leader in electronic banking, and over 39.8 percent of all retail banking transactions were made over the Internet in August 2000. Using the data of a large survey, we analyzed mature customers’ Internet banking behavior. Internet banking was the third popular mode of payment among mature customers. Household income and education were found to have a significant effect on the adoption of the Internet as a banking channel, so that over 30 percent of wealthy and well‐educated mature males make e‐banking their primary mode of making payments. Perceived difficulty in using computers combined with the lack of personal service in e‐banking were found to be the main barriers of …
Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches
2021
Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable f…
Investigation of lanthanum substitution effects in yttrium aluminium garnet: importance of solid state NMR and EPR methods
2020
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TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory
2008
We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories
2011
Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
2021
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies between 6 and 200 MeV were used at RADiation Effects Facility (RADEF) in Jyvaskyla, Finland, and at Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments (VESPER) in The European Organization for Nuclear Research (CERN), Switzerland. Photon irradiation was also performed in Jyvaskyla. In these irradiation tests, stuck bits originating from electro…
Steering between level repulsion and attraction: broad tunability of two-port driven cavity magnon-polaritons
2019
Abstract Cavity-magnon polaritons (CMPs) are the associated quasiparticles of the hybridization between cavity photons and magnons in a magnetic sample placed in a microwave resonator. In the strong coupling regime, where the macroscopic coupling strength exceeds the individual dissipation, there is a coherent exchange of information. This renders CMPs as promising candidates for future applications such as in information processing. Recent advances on the study of the CMP now allow not only for creation of CMPs on demand, but also for tuning of the coupling strength—this can be thought of as the enhancement or suppression of information exchange. Here, we go beyond standard single-port dri…
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.