Search results for "ICON"
showing 10 items of 3539 documents
Radiation emission at channeling of electrons in a strained layer undulator crystal
2013
Abstract Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission spectra from a crystalline undulator at electron beam energies of 270 and 855 MeV. The epitaxially grown graded composition strained layer Si 1 - x Ge x undulator had 4-period with a period length λ u = 9.9 μ m . Spectra taken at the beam energy of 270 MeV at channeling in the undulating (110) planes exhibit a broad excess yield around the theoretically expected photon energies of 0.069 MeV, as compared with a flat silicon reference crystal. Model calculations on the basis of synchrotron-like radiation emission from finite single arc elements, taking into account also coherence effects, su…
Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft
2009
Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…
A summary of expressions for central performance parameters of high efficiency solar cell concepts
2019
This work reviews expressions for central performance parameters of various types of PV-concepts when operating at the radiative limit. Some new expressions not published elsewhere are also included. The performance parameters include the short circuit current density, the open circuit voltage, the maximum power density and the optimal voltage. The cell concepts include single junction cells, cells optically coupled to up- and down-converters, intermediate band solar cells and a couple of implementations of multijunction devices. The Lambert W function is used to express the maximum power density.
Real space observation of two-dimensional Bloch wave interferences in a negative index photonic crystal cavity
2008
We report here the direct observation of two-dimensional (2D) Bloch wave interferences in a negative index photonic crystal by using optical near-field microscopy techniques. The photonic crystal is formed by a defectless honeycomb lattice of air holes etched in III-V semiconductor slab. A scanning near-field optical microscope is used to visualize spatially, as well as spectrally, the light distribution inside the photonic crystal. The recorded near-field spectra and maps presented here unambiguously demonstrate the Bloch wave interferences within the photonic crystal. Then, the spectral and spatial evolution of these interferences allows us to recover experimentally the 2D band diagram of…
Framework for complex quantum state generation and coherent control based on on-chip frequency combs
2018
Integrated frequency combs introduce a scalable framework for the generation and manipulation of complex quantum states (including multi-photon and high-dimensional states), using only standard silicon chip and fiber telecommunications components.
Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
2017
AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…
Two prospective Li-based half-Heusler alloys for spintronic applications based on structural stability and spin–orbit effect
2017
To search for half-metallic materials for spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations to design materials first, and then grow them. In particular, using a priori information of the structural stability and the effect of the spin–orbit interaction (SOI) enables experimentalists to focus on favorable properties that make growing half-metals easier. We suggest that using acoustic phonon spectra is the best way to address the stability of promising half-metallic materials. Additionally, by carrying out accurate first-principles calculations, we propose two criteria for neglecting the SOI s…
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
2016
Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing
2013
International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.
High-pressure x-ray-absorption study of GaSe
2002
The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple m…