Search results for "Interfaces"
showing 10 items of 1258 documents
Polymer solar cells with novel fullerene-based acceptor
2004
Abstract Alternative acceptor materials are possible candidates to improve the optical absorption and/or the open circuit voltage of polymer–fullerene solar cells. We studied a novel fullerene-type acceptor, DPM-12, for application in polymer–fullerene bulk heterojunction photovoltaic devices. Though DPM-12 has the identical redox potentials as methanofullerene PCBM, surprisingly high open circuit voltages in the range V OC =0.95 V were measured for OC 1 C 10 -PPV:DPM-12-based samples. The potential for photovoltaic application was studied by means of photovoltaic characterization of solar cells including current–voltage measurements and external quantum yield spectroscopy. Further studies …
Statistical characterization of self-assembled charged nanoparticle structures
2013
We propose a novel approach for description of dynamics of nanostructure formation for a system consisting of oppositely charged particles. The combination of numerical solution of analytical Bogolyubov–Born–Green–Kirkwood–Yvon (BBGKY) type equation set with reverse Monte Carlo (RMC) method allows us to overcome difficulties of standard approaches, such as kinetic Monte Carlo or Molecular Dynamics, to describe effects of long-range Coulomb interactions. Moreover, this allows one to study the system dynamics on realistic time and length scales. We applied this method to a simple short-range Lenard–Jones (LJ)-like three- (3D) and two-dimensional (2D) system combining the long-range Coulomb an…
Sputtered cuprous oxide thin films and nitrogen doping by ion implantation
2016
Abstract The structural, optical and electrical properties of sputtered cuprous oxide thin films have been optimized through post-deposition thermal treatments. Moreover we have studied the effects of nitrogen doping introduced by ion implantation followed by the optimized oxidant thermal annealing. Three concentrations have been used, 0.6 N%, 1.2 N%, and 2.5 N%. Along with the preservation of the Cu 2 O phase, a slight optical band gap narrowing and a significant conductivity enhancement has been observed with respect to the undoped samples. These results can be justified by the absence of further oxygen vacancies promoted by dopant introduction and by the substitution of O atoms by N ones…
A comparative analysis of electron spectroscopy and first-principles studies on Cu(Pd) adsorption on MgO
2006
Ultrathin MgO films were grown on a W(1 1 0) substrate while metastable impact electron (MIES) and photoelectron (UPS) spectra were measured in situ; apart from the valence band emission, no additional spectral features were detected. The oxide surface was exposed to metal atoms (Cu, Pd) at RT. A comparison with the DOS extracted from first-principles DFT calculations shows that the metal-induced intensity developing above the top of the O 2p valence band in the UP spectra under Cu(Pd) exposure is caused by Cu 3d (Pd 4d) emission. The emission seen in the MIES spectra is attributed to the ionization of Cu 3d and 4s states of adsorbed neutral Cu atoms in an Auger process, Auger neutralizatio…
Molecular dynamics simulations of the nano-scale room-temperature oxidation of aluminum single crystals
2005
The oxidation of aluminum single crystals is studied using molecular dynamics (MD) simulations with dynamic charge transfer between atoms. The simulations are performed on three aluminum low-index surfaces ((1 0 0), (1 1 0) and (1 1 1)) at room temperature. The results show that the oxide film growth kinetics is independent of the crystallographic orientation under the present conditions. Beyond a transition regime (100 ps) the growth kinetics follow a direct logarithmic law and present a limiting thickness of 3 nm. The obtained amorphous structure of the oxide film has initially Al excess (compared to the composition of Al2O3) and evolves, during the oxidation process, to an Al percentage …
Low temperature atomic layer deposition of noble metals using ozone and molecular hydrogen as reactants
2013
Abstract Atomic layer deposition (ALD) of noble metals by thermal processes has relied mostly on the use of molecular oxygen as a reactant at temperatures of 200 °C and above. In this study, the concept of using consecutive ozone and molecular hydrogen pulses with noble metal precursors in ALD is introduced for palladium, rhodium, and platinum metals. This approach facilitates the growth of noble metal thin films below 200 °C. Also the ALD of palladium oxide thin films is demonstrated by the ozone-based chemistry. The growth rates, resistivities, crystallinities, surface roughnesses, impurity contents, and adhesion of the films to the underlying Al 2 O 3 starting surface are reported and th…
Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3
2015
Abstract We study the impact of ozone-based Al2O3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration…
Surface investigation of plasma HMDSO membranes post-treated by CF4/Ar plasma
2002
Fluorination treatment has been performed on polysiloxane membranes using a plasma glow discharge of a gases mixture CF4 and argon (plasma enhanced chemical vapor deposition). Atomic force microscopy, XPS analyses and contact angle measurements have been undertaken to explain the surface transformation and behavior, which strongly depend on the morphology, the composition and the hydrophilic/hydrophobic character of the plasma-polymerized initial membranes. Main result is that fluorination, which leads to hydrophobic membranes, has a more relevant effect on amorphous silica-like membranes than on polymer-like ones, according to their chemical composition whereas the plasma surface reaction …
Dynamic interface for machine vision systems
2002
Iconic programming intends to provide expressive tools to implement, to debug, and to execute programs. For this purpose, visual languages need pictorial constructs and metaphors to guide the design of algorithms in interactive fashion. In the paper a new class of dynamic visual interfaces, named DIVA (Dynamic Interface for Visual Applications), is introduced, its properties are described, and an application to visual compilers in a multi-processors system dedicated to image analysis is given. Moreover, a formal definition of dynamic icon (DI) is also given.
Surface passivation of gallium selenide by nitrogen implantation
2002
In this paper we report on the characterization of nitrogen-implanted single-crystal GaSe samples. Nitrogen atoms were implanted at 80 keV, with doses ranging from 4 × 10 13 to 10 15 N + ions cm -2 . Next, samples were aged in open air and characterized by small-area XPS, together with an unimplanted clean surface, in order to quantify the effects of the nitrogen implantation. In general, we found that the oxidation was fully prevented in N + -implanted samples.