Search results for "JUNCTION"

showing 10 items of 862 documents

p -Type and n -type conductometric behaviors of octachloro-metallophthalocyanine-based heterojunctions, the key role of the metal

2020

In the present work, we determined the electrical properties of octachlorinated metallophthalocyanines with Co(II) and Cu(II) ions as metal centers. We engaged them in heterojunctions, with lutetium bisphthalocyanine as a partner. Surprisingly, cobalt and copper complexes show opposite behaviors, the first being an [Formula: see text]-type material whereas the latter is a [Formula: see text]-type material, as deduced from the response of the heterojunctions towards ammonia; showing the unusual key role played by the metal center. While the LuPc[Formula: see text]/Cu(Cl[Formula: see text]Pc) complex exhibits a negative response to ammonia, the LuPc[Formula: see text]/Co(Cl[Formula: see text…

Heterojunction02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesIonMetalAmmoniachemistry.chemical_compoundchemistryMolecular semiconductorvisual_artvisual_art.visual_art_mediumPhysical chemistry[CHIM]Chemical Sciences0210 nano-technologyComputingMilieux_MISCELLANEOUS
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Intergrain Effects in the AC Susceptibility of Polycrystalline LaFeAsO_{0.94}F_{0.06}

2010

The AC susceptibility, chi, at zero DC magnetic field of a polycrystalline sample of LaFeAsO_{0.94}F_{0.06} (Tc ≈ 24 K) has been investigated as a function of the temperature, the amplitude of the AC magnetic field (in the range Hac = 0.003 Oe - 4 Oe) and the frequency (in the range f = 10 kHz - 100 kHz). The chi(T) curve exhibits the typical two-step transition arising from the combined response of superconducting grains and intergranular weak-coupled medium. The intergranular part of chi strongly depends on both the amplitude and the frequency of the AC driving field, from few Kelvin below Tc down to T = 4.2 K. Our results show that, in the investigated sample, the intergrain critical cur…

High-temperature superconductivityMaterials scienceCondensed matter physicsField (physics)OxypnictideIntergranular corrosionCondensed Matter PhysicsAtomic and Molecular Physics and OpticsMagnetic fieldlaw.inventionVortexJosephson junction arrayAmplitudeAC susceptibilitylawGeneral Materials ScienceGrain boundaryCrystalliteGranularity
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Acoustic properties of nanoscale oxide heterostructures probed by UV Raman spectroscopy

2007

We study high quality molecular-beam epitaxy grown BaTiO3/SrTiO3 superlat-tices using ultraviolet Raman spectroscopy. In the low energy spectral region, acoustic phonon doublets are observed. These are due to the artificial superlattice periodicity and consequent folding of the acoustic phonon dispersion. From the study of samples with different BaTiO3/SrTiO3 layer thicknesses the effective sound velocities within each of the layers are obtained.

HistoryMaterials sciencePhononbusiness.industrySuperlatticeHeterojunctionmedicine.disease_causeEpitaxyComputer Science ApplicationsEducationCondensed Matter::Materials Sciencesymbols.namesakeCondensed Matter::SuperconductivityDispersion (optics)medicinesymbolsOptoelectronicsCoherent anti-Stokes Raman spectroscopybusinessRaman spectroscopyUltravioletJournal of Physics: Conference Series
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Water splitting through model surfaces of metal oxides : ferroelectric polarization towards water adsorption processes

2019

The properties of out-of-plane polarized BaTiO3(001) thin films were investigated from first-principles calculations and photoemission spectroscopy. Firstly, density functional theory calculations (DFT) were used to unravel the nature of the Pt(001)/BaTiO3(001) interface. In particular, the influence of the substrate on the ferroelectric properties of the BaTiO3 overlayer has been studied. Among the results, it can be pointed that platinum tends to increase the ferroelectric domain size of BaTiO3.Then, the adsorption of water on BaTiO3 was described by means of DFT calculations. The impact of the polarization as well as the influence of the nature of the surface termination on water adsorpt…

HétérojonctionFerroelectricityBaTiO3[CHIM.OTHE] Chemical Sciences/OtherPhotoélectrolyseHeterojunctionWater splittingFerroélectricité[CHIM.OTHE]Chemical Sciences/OtherNap-XpsDft
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Development of Kesterite (Cu2ZnSnS4) absorber material for solar cell application.

2021

Kesterite-based solar cells still suffer from limited efficiency due to various problems related to the absorber and device interfaces. Absorber defects and non-ideal band alignment at the absorber/buffer hetero-interface, resulting in a cliff-like conduction band offset (CBO), and non-ideal absorber/back contact interfaces are the main factors limiting efficiency.This thesis focuses mainly on the absorber-related problems such as the secondary phases and the band alignment at the absorber-buffer heterojunction as well as the back interface.In the first part, the properties of the absorber layer were studied. Thin layers of Cu2ZnSnS4 (CZTS) were obtained by chemical route. This study reveal…

HétérojonctionKesterite[CHIM.OTHE] Chemical Sciences/OtherSolar cellHeterojunctionAbsorberSuperstrateSuperstratSubstitutionAbsorbeurCellule solaire
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Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots

2008

Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es

III-V semiconductorsMaterials scienceCondensed matter physicsPhononUNESCO::FÍSICAGallium compoundsGeneral Physics and AstronomyHeterojunctionAluminium compounds ; Gallium compounds ; III-V semiconductors ; Phonons ; Raman spectra ; Semiconductor quantum dots ; Thermal expansionAtmospheric temperature rangeCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials Sciencesymbols.namesakeLaser linewidth:FÍSICA [UNESCO]Quantum dotsymbolsPhononsSemiconductor quantum dotsRaman spectraThermal expansionRaman spectroscopyAluminium compoundsRaman scatteringWurtzite crystal structureJournal of Applied Physics
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Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells

1998

9 páginas, 11 figuras.

III-V semiconductorsPhotoluminescenceMaterials scienceBand gapExcitonAlloyGeneral Physics and Astronomyengineering.materialGallium arsenideSpectral line broadeningchemistry.chemical_compoundCondensed Matter::Materials ScienceGallium arsenideIndium compounds:FÍSICA [UNESCO]Optical constantsInterface structureFluctuationsSemiconductor quantum wellsPhotoluminescenceQuantum wellCondensed matter physicsCondensed Matter::OtherGallium compoundsUNESCO::FÍSICAHeterojunctionInterface statesCondensed Matter::Mesoscopic Systems and Quantum Hall EffectStoichiometryEnergy gapchemistryIndium compounds ; Gallium compounds ; III-V semiconductors ; Gallium arsenide ; Semiconductor quantum wells ; Interface structure ; Photoluminescence ; Excitons ; Interface states ; Fluctuations ; Stoichiometry ; Spectral line broadening ; Energy gap ; Optical constantsengineeringExcitonsMolecular beam epitaxy
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High-Frequency Experimental Characterization and Modeling of Six Pack IGBTs Power Modules

2016

In this paper, a method to characterize the high-frequency (HF) behavior of six pack insulated gate bipolar transistors (IGBTs) power module (PM) is presented. The method is based on experimental measurements at the external pins of the device and it allows one to extract internal inductive and capacitive parasitic coupling without the knowledge of structural and physical parameters of the PM. The HF model of a six pack IGBTs PM has been developed, in the frequency range of 150 kHz-30 MHz, and it has been implemented in MATLAB environment. The method has been experimentally validated by comparing the frequency behavior of the PM with the simulated response. Moreover, the HF conducted distur…

ImaginationEngineeringmedia_common.quotation_subjectCapacitive sensing02 engineering and technology01 natural sciencesCapacitanceElectromagnetic compatibility (EMC)power conversion0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectronic engineeringElectrical and Electronic EngineeringMATLABElectrical impedancemedia_commoncomputer.programming_language010302 applied physicsCouplingpower semiconductor switchepower semiconductor switchesbusiness.industry020208 electrical & electronic engineeringBipolar junction transistormodelingComputer Science Applications1707 Computer Vision and Pattern Recognitionpower module (PM)electromagnetic couplingControl and Systems EngineeringPower modulebusinessSettore ING-INF/07 - Misure Elettriche E ElettronichecomputerIEEE Transactions on Industrial Electronics
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Effectual tactics in digital intrapreneurship: A process model

2020

Abstract Uncertainty and the pursuit of new ventures are intricately linked. Digital technologies open up new ways for uncertainty handling in the pursuit of novelty. In this paper, we develop a process model that traces the dynamics among uncertainty, digitally enabled tactics, and organizational novelty. The model points to the potential of technologies that are evocative, disposable, and responsive for venturing in complex, uncertainty-ridden contexts. Our research builds on extant conceptualizations of complexity in innovation journeys, in conjunction with perspectives on effectual entrepreneurial tactics. Empirically, we investigate uncertainty handling through a longitudinal case stud…

Information Systems and ManagementIntrapreneurshipKnowledge management020205 medical informaticsUncertainty handlingProcess (engineering)business.industryComputer science05 social sciencesNoveltyNew Ventures02 engineering and technologyUniversity hospitalManagement Information SystemsConjunction (grammar)Extant taxon0502 economics and business0202 electrical engineering electronic engineering information engineeringbusiness050203 business & managementInformation SystemsThe Journal of Strategic Information Systems
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Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates

2003

Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…

Inorganic ChemistryCrystallographyChemistryMaterials ChemistryHeterojunctionCrystalliteMetalorganic vapour phase epitaxyTexture (crystalline)Chemical vapor depositionThin filmCondensed Matter PhysicsCrystal twinningCadmium telluride photovoltaicsJournal of Crystal Growth
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