Search results for "LEM"
showing 10 items of 23327 documents
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
2019
Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
2017
Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…
Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions
2018
This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…
Mathematical modelling of the feed rod shape in floating zone silicon crystal growth
2017
Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …
Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth
2019
Abstract A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.
XUV diagnostic to monitor H-like emission from B, C, N, and O for the W7-X stellarator
2019
The “C/O Monitor” system for the Wendelstein 7-X (W7-X) stellarator is a dedicated spectrometer with high throughput and high time resolution (order of 1 ms) for fast monitoring of content of low-Z impurities in the plasma. The observed spectral lines are fixed to Lyman-α lines of H-like atoms of carbon (3.4 nm), oxygen (1.9 nm), nitrogen (2.5 nm), and boron (4.9 nm). The quality of the wall condition will be monitored by the measurements of oxygen being released from the walls during the experiments. The strong presence of carbon is an indication for enhanced plasma-wall interaction or overload of plasma facing components. The presence of nitrogen (together with oxygen) may indicate a poss…
Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity
2016
This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.
Correlations between density distributions, optical spectra, and ion species in a hydrogen plasma (invited)
2016
An experimental study of plasma distributions in a 2.45 GHz hydrogen discharge operated at 100 Hz repetition rate is presented. Ultrafast photography, time integrated visible light emission spectra, time resolved Balmer-alpha emission, time resolved Fulcher Band emission, ion species mass spectra, and time resolved ion species fraction measurements have been implemented as diagnostic tools in a broad range of plasma conditions. Results of plasma distributions and optical emissions correlated with H + , H + 2 , and H + 3 ion currents by using a Wien filter system with optical observation capability are reported. The magnetic field distribution and strength is found as the most critical facto…
Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions
2011
Abstract The ferroelectric compounds Pb 2 Na 1− x La x Nb 5− x Fe x O 15 and Pb 0.5(5− x ) La x Nb 5− x Fe x O 15 (0≤ x ≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200–1000 cm −1 three main A 1 phonons around 240 ( υ 1 ), 630 ( υ 2 ) and 816 ( υ 3 ) cm −1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm −1 , reveals a structural ch…
The role of seed electrons on the plasma breakdown and preglow of electron cyclotron resonance ion source
2009
The 14 GHz Electron Cyclotron Resonance Ion Source at University of Jyväskylä, Department of Physics (JYFL) has been operated in pulsed mode in order to study the plasma breakdown and preglow effect. It was observed that the plasma breakdown time and preglow characteristics are affected by seed electrons provided by a continuous low power microwave signal at secondary frequency. Sustaining low density plasma during the off-period of high power microwave pulses at the primary frequency shifts the charge state distribution of the preglow transient toward higher charge states. This could be exploited for applications requiring fast and efficient ionization of radioactive elements as proposed f…