Search results for "Liability"
showing 10 items of 1754 documents
The dynamics of the surface layer of lipid membranes doped by vanadium complex: computer modeling and EPR studies
2015
Abstract Penetration of the liposome membranes doped with vanadium complex formed in the liquid-crystalline phase from egg yolk lecithin (EYL) by the TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl) spin probes has been investigated. The penetration process was followed by 360 hours at 24°C, using the electron spin resonance (EPR) method. The spectroscopic parameter of the partition (F) of this probe indicated that a maximum rigidity of the membrane was at 3% concentration of the vanadium complex. Computer simulations showed that the increase in the rigidity of the membrane corresponds to the closure of gaps in the surface layer of the membrane, and indicates the essential role of the membrane …
Second order reflection from crystals used in soft X-ray spectroscopy
2015
Abstract In this note the ratio of the second to the first order reflection is determined for the KAP and PbSt crystals, for wavelengths corresponding to the Al K-line emission. The source of the radiation was a low-voltage stabilized X-ray tube. The X-rays were detected with a Bragg spectrometer equipped with a proportional counter detector. The signal measured by the proportional counter was subsequently pulse height analyzed.
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
2012
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
Stopping power measurement of 48Ca in a broad energy range in solid absorbers
2006
Abstract Stopping power of 48 Ca ions in C, Ni and Au was measured using TOF-E method. The results cover energy range from 0.1 to 5.3 MeV/u (5–250 MeV). The reliability of our experimental method was verified and confirmed by TOF–TOF measurements. The results are compared with theoretical (PASS) and semi empirical (SRIM2003) predictions.
Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip
2021
Abstract The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the active circuitry will allow to build modules with very narrow inactive regions between the sensors. Inactive edge regions of less than 5 μ m to the electronic circuitry could be achieved for 100 μ m thick sensors. The MALTA chip (Cardella et al., 2019) also offers the possibility to transfer data and power directly from chip to chip. Tests have been carried out connecting two MALTA chips directly using ultrasonic wedge wire bonding. Results from lab tests show that the data accumulated in…
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
2021
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies between 6 and 200 MeV were used at RADiation Effects Facility (RADEF) in Jyvaskyla, Finland, and at Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments (VESPER) in The European Organization for Nuclear Research (CERN), Switzerland. Photon irradiation was also performed in Jyvaskyla. In these irradiation tests, stuck bits originating from electro…
Proton irradiation-induced reliability degradation of SiC power MOSFET
2023
The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed
The utmost ends of the nuclear fuel cycle: Finnish perceptions of the risks of uranium mining and nuclear waste management
2013
There has been substantial social scientific research to determine how people perceive the risks of nuclear power, wastes, and waste management, but not much attention has been given to risk perceptions of other types of nuclear activities. Knowledge about attitudes towards uranium mining and exploitation is increasing, and more attention should be paid to how people perceive the risks of both ends of the nuclear fuel cycle. Therefore, the aim of this paper is to analyze the risk perceptions towards nuclear waste and uranium mining and how these perceptions relate to each other. The analysis is based on Finnish survey data (N = 1180) gathered in 2007. Renewed international interest in nucle…
About the Reliability of Extrapolation of Nuclear Structure Data for r-process Calculations
2002
Gross decay properties are the nuclear part of the input for calculations of elemental abundances. They depend, sometimes very sensitively, on details of nuclear structure. Models for predictions of nuclear masses and shapes have to be used for isotopes very far from stability. The reliability of extrapolations far from experimentally reachable nuclei is, however, not always granted due to singularities in the nuclear landscape. We review data on the region of the neutron-rich isotopes near A = 100, which is a region of especially dramatic changes.