Search results for "Lithography"
showing 10 items of 242 documents
Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
2009
5 páginas, 5 figuras.
All-organic electro-optic waveguide modulator comprising SU-8 and nonlinear optical polymer
2017
Institute of Solid State Physics, University of Latvia (SJZ/2016/26); Ministry of Education and Science, Republic of Latvia (MultIfunctional Materials and composItes, photonicS and nanotechnology (IMIS2)). We acknowledge Dr. Anatolijs Sarakovskis at Institute of Solid State Physics for the XPS measurements.
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer
2015
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
DNA-based biosensor on flexible nylon substrate by dip-pen lithography for topoisomerase detection
2019
Dip-pen lithography (DPL) technique has been employed to develop a new flexible biosensor realized on nylon with the aim to detect the activity of human topoisomerase. The sensor is constituted by an ordered array of a DNA substrate on flexible nylon supports that can be exploited as a drug screening platform for anticancer molecules. Here, we demonstrate a rapid protocol that permits to immobilize minute quantities of DNA oligonucleotides by DPL on nylon surfaces. Theoretical and experimental aspects have been investigated to successfully print DNA oligonucleotides by DPL on such a porous and irregular substrate.
Better Actuation Through Chemistry: Using Surface Coatings to Create Uniform Director Fields in Nematic Liquid Crystal Elastomers.
2016
Controlling the molecular alignment of liquid crystal monomers (LCMs) within nano- and microstructures is essential in manipulating the actuation behavior of nematic liquid crystal elastomers (NLCEs). Here, we study how to induce uniformly vertical alignment of nematic LCMs within a micropillar array to maximize the macroscopic shape change using surface chemistry. Landau-de Gennes numerical modeling suggests that it is difficult to perfectly align LCMs vertically in every pore within a poly(dimethylsiloxane) (PDMS) mold with porous channels during soft lithography. In an untreated PDMS mold that provides homeotropic anchoring of LCMs, a radially escaped configuration of LCMs is observed. V…
Why are hydrogen ions best for MeV ion beam lithography?
2013
The exposure characteristics of poly-(methyl methacrylate) (PMMA) for 2MeV ^1H^+, 3MeV ^4He^2^+ and 6MeV ^1^2C^3^+ have been investigated. The samples were characterised using Atomic Force Microscopy (AFM), optical microscopy and Raman spectroscopy. Development was carried out using a 7:3 propan-2-ol:H"2O mixture to determine clearing and cross-linking fluences. It was found that protons had a considerably wider tolerance to exposure variations and a smaller span of doses within the ion track. Furthermore, the void formation and consequent stress-induced surface roughening were smaller for protons. For all ions, the C?C bond Raman signal increased continuously with dose and fluence, even we…
Resolution performance of programmable proximity aperture MeV ion beam lithography system
2007
AbstractAn ion beam lithography system for light and heavy ions has been developed at the University of Jyväskylä's Accelerator Laboratory. The system employs a programmable proximity aperture to define the beam. The proximity aperture is made up of four Ta blades with precise straight edges that cut the beam in the horizontal and vertical directions. The blade positions and dimensions are controlled by a pair of high-precision linear-motion positioners. The sample is mounted on a X-Y-Z stage capable of moving with 100 nm precision steps under computer control. The resolution performance of the system is primarily governed by the proximity aperture. Pattern edge sharpness is set by the beam…
Editorial for the Special Issue on Nanofabrication with Focused Electron/Ion Beam Induced Processing
2021
Focused electron beam (FEB) and focused ion beam (FIB) technologies have opened novel paths for material science research and technology at the micro and nano scales in recent decades [...]
Programmable proximity aperture lithography with MeV ion beams
2008
A novel MeV ion beam programmable proximity aperture lithography system has been constructed at the Accelerator Laboratory of the University of Jyvaskyla, Finland. This facility can be used to fabricate three dimensional microstructures in thick (<100μm) polymer resist such as polymethylmethacrylate. In this method, MeV ion beams from the 1.7 MV pelletron and K130 cyclotron accelerators are collimated to a beam spot of rectangular shape. This shape is defined by a computer-controlled aperture made of a pair of L-shaped Ta blades which are in close proximity to the sample to minimize the penumbra broadening. Here the authors report on development of the system, the controlling software, the …
Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing
2013
Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.