Search results for "Magneto"

showing 10 items of 919 documents

Entanglement-Based dc magnetometry with separated ions

2017

We demonstrate sensing of inhomogeneous dc magnetic fields by employing entangled trapped ions, which are shuttled in a segmented Paul trap. As sensor states, we use Bell states of the type j↑↓i þ eiφj↓↑i encoded in two 40Caþ ions stored at different locations. The linear Zeeman effect leads to the accumulation of a relative phase φ, which serves for measuring the magnetic-field difference between the constituent locations. Common-mode magnetic-field fluctuations are rejected by the entangled sensor state, which gives rise to excellent sensitivity without employing dynamical decoupling and therefore enables accurate dc sensing. Consecutive measurements on sensor states encoded in the S1=2 g…

Magnetometeriones fríosQC1-999Ciencias FísicasGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyQuantum entanglementmagnetometría01 natural scienceslaw.inventionIon//purl.org/becyt/ford/1 [https]computacion cuánticalaw0103 physical sciences010306 general physicsPhysicsCondensed Matter::Quantum GasesQuantum PhysicsCondensed matter physicsPhysics//purl.org/becyt/ford/1.3 [https]021001 nanoscience & nanotechnologyAstronomía0210 nano-technologyQuantum Physics (quant-ph)CIENCIAS NATURALES Y EXACTAS
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Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices

2017

The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single-molecule electrical contact at room temperature. The single-molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their F…

Magnetoresistance02 engineering and technologyElectronic structure010402 general chemistry01 natural sciencesBiochemistryCatalysisMetal L-edgesymbols.namesakeColloid and Surface ChemistryTransition metalMagnetoresistènciaSurface statesDensity functionalsCondensed matter physicsChemistryMagnetoresistanceFermi levelTeoria del funcional de densitatGeneral ChemistryEspintrònicaSpintronics021001 nanoscience & nanotechnology0104 chemical sciencesFerromagnetismsymbolsCondensed Matter::Strongly Correlated ElectronsElectron configuration0210 nano-technology
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Theory of domain-wall magnetoresistance in metallic antiferromagnets

2020

We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the domain-wall orientation and spin structure. In contrast, when the transport is in the ballistic regime, the DWMR is always positive, and the magnitude depends on the width and orientation of the domain wall. Our results pave the way of using electrical measurements for probing the internal spin structure in antiferromagnetic metals.

Magnetoresistance530 PhysicsFOS: Physical sciences02 engineering and technologySpin structure01 natural sciencesMetal0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)AntiferromagnetismElectrical measurements010306 general physicsSpin-½PhysicsCondensed Matter - Materials ScienceQuantum PhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsMaterials Science (cond-mat.mtrl-sci)021001 nanoscience & nanotechnology530 PhysikOrientation (vector space)Domain wall (magnetism)visual_artvisual_art.visual_art_mediumCondensed Matter::Strongly Correlated Electrons0210 nano-technologyQuantum Physics (quant-ph)
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Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au

2019

In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples were exposed to 60 T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance was measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110]-direction, an ansiotropic magnetoresistance of -0.15 % was m…

Magnetoresistance530 PhysicsGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyEpitaxy01 natural sciencesMagnetizationCondensed Matter::Materials Science0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)AntiferromagnetismThin film010306 general physicsPhysicsCondensed Matter - Materials ScienceAnnihilationSpintronicsCondensed matter physicsCondensed Matter - Mesoscale and Nanoscale PhysicsMaterials Science (cond-mat.mtrl-sci)530 Physik021001 nanoscience & nanotechnologyMagnetic fieldCondensed Matter::Strongly Correlated Electrons0210 nano-technology
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Calculation of surface quantum levels in tellurium inversion layers

1978

MagnetoresistanceChemistrychemistry.chemical_elementInversion (meteorology)Atomic physicsTelluriumConduction bandQuantumJournal de Physique
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Magnetoresistance studies of the ferromagnetic molecular metal (BEDT-TTF)3[MnCr(C2O4)3] under pressure

2003

(BEDT-TTF)3[MnCr(C2O4)3] is the first ferromagnetic molecular metal, in which organic layers of BEDT-TTF alternate with infinite layers of the bimetallic oxalate complex [MnCr(C2O4)3]-. While the bimetallic layer undergoes a magnetic phase transition into a canted ferromagnetic state at 5.5 K, the metallic character of the conductivity is not affected by the magnetic transition [Nature 408 (2000) 447]. We performed magnetoresistance measurements (B≤17 T) at low temperatures (T≥900 mK) and under hydrostatic pressures of up to 2.0 GPa. Oscillations in the magnetoresistance develop under pressure that can be interpreted as Shubnikov-de Haas oscillations, if an internal magnetic field is taken …

MagnetoresistanceCondensed matter physicsChemistryMagnetismMechanical EngineeringHydrostatic pressureMetals and AlloysConductivityCondensed Matter PhysicsThermal conductionShubnikov–de Haas effectElectronic Optical and Magnetic MaterialsMagnetic fieldFerromagnetismMechanics of MaterialsMaterials ChemistrySynthetic Metals
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Large negative magnetoresistance effects in Co2Cr0.6Fe0.4Al

2003

Abstract Materials, which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heusler compound Co2Cr0.6Fe0.4Al. Based on our band structure calculations, we have chosen this composition in order to obtain a half-metallic ferromagnet with a van Hove singularity in the vicinity of the Fermi energy in the majority spin channel and a gap in the minority spin channel. We find a magnetoresistive effect of 30% …

MagnetoresistanceCondensed matter physicsSpintronicsChemistryVan Hove singularityengineering.materialCondensed Matter PhysicsHeusler compoundElectronic Optical and Magnetic MaterialsMagnetic fieldInorganic ChemistryCondensed Matter::Materials ScienceParamagnetismMagnetizationFerromagnetismMaterials ChemistryCeramics and CompositesengineeringCondensed Matter::Strongly Correlated ElectronsPhysical and Theoretical ChemistryJournal of Solid State Chemistry
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A magnetic skyrmion as a non-linear resistive element - a potential building block for reservoir computing

2017

Inspired by the human brain, there is a strong effort to find alternative models of information processing capable of imitating the high energy efficiency of neuromorphic information processing. One possible realization of cognitive computing are reservoir computing networks. These networks are built out of non-linear resistive elements which are recursively connected. We propose that a skyrmion network embedded in frustrated magnetic films may provide a suitable physical implementation for reservoir computing applications. The significant key ingredient of such a network is a two-terminal device with non-linear voltage characteristics originating from single-layer magnetoresistive effects,…

MagnetoresistanceGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyMagnetic skyrmionTopology01 natural sciencesCondensed Matter - Strongly Correlated Electrons0103 physical sciences010306 general physicsBlock (data storage)PhysicsResistive touchscreenStrongly Correlated Electrons (cond-mat.str-el)SkyrmionReservoir computingDisordered Systems and Neural Networks (cond-mat.dis-nn)Condensed Matter - Disordered Systems and Neural NetworksPhysik (inkl. Astronomie)021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter - Other Condensed MatterNeuromorphic engineering0210 nano-technologyRealization (systems)Other Condensed Matter (cond-mat.other)
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Preliminary design of a magnetorheological brake for automotive use

2011

After an initial study of the characteristics of magnetorheological fluids based on a thorough search in literature, a preliminary configuration of MR brake is proposed. It comes from the evaluation of the main factors influencing the design of an appropriate magnetic circuit, and then the performance obtained in terms of brake torque. The analytical study of the brake has allowed a first preliminary sizing. Through the subsequent execution of an electromagnetic finite element model, created in ANSYS, it was possible to assess more accurately the distribution of the magnetic field inside the MR fluid and hence the resistance to relative motion between rotor and stator. The work needs an acc…

Magnetorheological fluidSettore ING-IND/14 - Progettazione Meccanica E Costruzione Di MacchineMR brakeMagnetic FEM
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Ten-year resistance training background modulates somatosensory P3 cognitive brain resonse in older men : a magnetoencephalograpy study

2020

The brain electrophysiological component P3, associated with good cognitive abilities, deteriorates during healthy aging. Both cognitive functions and P3 component amplitude respond positively to exercise, but the effects of resistance training on P3 are much less studied. Short-term resistance training interventions in older adults indicate modulation towards larger P3 amplitude, but this association has not been studied with a longitudinal study design. We investigated magnetoencephalographically recorded P3 (P3m) in a unique study design of nine aged men (mean age 77.7 y) with quasi-supervised resistance training background over a 10-year period and eight controls of similar age (mean ag…

Male0301 basic medicinemagnetoencephalographykognitioAgingmedicine.medical_specialtyLongitudinal studyElementary cognitive taskStrength trainingAudiologySomatosensory systemBiochemistry03 medical and health sciencesCognition0302 clinical medicineEndocrinologyReaction TimeGeneticsmedicinestrength trainingHumansLongitudinal Studiesaivotutkimuselectrical stimulationMolecular BiologyOddball paradigmAgedMEGmedicine.diagnostic_testexercisebusiness.industrykuntoliikuntaP3magingBrainElectroencephalographyResistance TrainingCognitionCell BiologyMagnetoencephalographyElectrophysiology030104 developmental biologyikääntyminenvoimaharjoittelubusiness030217 neurology & neurosurgery
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