Search results for "Nanoelectronics"
showing 10 items of 36 documents
Bottom-up realization and electrical characterization of a graphene-based device.
2016
We propose a bottom-up procedure to fabricate an easy-to-engineer graphene-based device, consisting of a microstrip-like circuit where few-layer graphene nanoplatelets are used to contact two copper electrodes. The graphene nanoplatelets are obtained by the microwave irradiation of intercalated graphite, i.e., an environmentally friendly, fast and low-cost procedure. The contact is created by a bottom-up process, driven by the application of a DC electrical field in the gap between the electrodes, yielding the formation of a graphene carpet. The electrical resistance of the device has been measured as a function of the gap length and device temperature. The possible use of this device as a …
Simulation of electromagnetic properties in carbon nanotubes and graphene-based nanostructures
2012
As carbon nanotubes (CNT) and graphene nanostructures (GNR) constitute the basis of high-speed nanoelectronics and nanosensors, we examine the fundamental properties of var- ious CNT-metal (Me), GNR-Me, and CNT-graphene interconnects. The cluster approach based on the multiple scattering theory as well as effective medium approximation were used to model the dispersion law, electronic density of states (DOS), and conductivity, etc. Multiple scattering problems were solved for nanostructures with radial (quantum dots) and axial (nanowires, nano- tubes) symmetry. Interconnect capacitances and impedances have been evaluated in the GHz and THz regimes. Parametrical numerical simulations of cond…
Formation and Rupture of Schottky Nanocontacts on ZnO Nanocolumns
2007
In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force. For loading forces higher than a threshold value, the transport characteristics are similar to those of large-area Schottky contact, while below this threshold deviations from strictly thermionic emission …
Imaging the Magnetic Reversal of Isolated and Organized Molecular-Based Nanoparticles using Magnetic Force Microscopy
2015
In the race towards miniaturization in nanoelectronics, magnetic nanoparticles (MNPs) have emerged as potential candidates for their integration in ultrahigh-density recording media. Molecular-based materials open the possibility to design new tailor-made MNPs with variable composition and sizes, which benefit from the intrinsic properties of these materials. Before their implementation in real devices is reached, a precise organization on surfaces and a reliable characterization and manipulation of their individual magnetic behavior are required. In this paper, it is demonstrated how molecular-based MNPs are accurately organized on surfaces and how the magnetic properties of the individual…
Tuning of an Optical Dimer Nanoantenna by Electrically Controlling Its Load Impedance
2009
International audience; Optical antennas are elementary units used to direct optical radiation to the nanoscale. Here we demonstrate an active control over individual antenna performances by an external electrical trigger. We find that by an in-plane command of an anisotropic load medium, the electromagnetic interaction between individual elements constituting an optical antenna can be controlled, resulting in a strong polarization and tuning response. An active command of the antenna is a prerequisite for directing light wave through the utilization of such a device.
High-Density Arrays of Germanium Nanowire Photoresistors
2006
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…
Effect of high-k materials in the control dielectric stack of nanocrystal memories
2004
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
How far will Silicon nanocrystals push the scaling limits of NVMs technologies?
2004
For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively.
Devices based on semiconductor nanowires
2009
Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 1012 devices per cm−2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.
Ligand-Protected Gold Nanoclusters as Superatoms—Insights from Theory and Computations
2012
Abstract Gold clusters and nanoparticles, stabilized by various ligands, exhibit a rich array of interesting and important electronic, optical, chemical and catalytic properties. Many particles can now be synthesized by wet chemistry, and they can be handled as normal chemicals: stored, modified and functionalized for applications in medical therapy, biolabelling, sensing, nanoelectronics and catalysis. In recent years, understanding of the stability, surface chemistry and functionalization of these interesting building blocks of nano-matter has taken a quantum leap. This is facilitated by simultaneous breakthroughs in experimental and theoretical fronts concerning accurate structural deter…