Search results for "Organic Chemistry"
showing 10 items of 17180 documents
The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films
2017
Abstract Thin films of bismuth sulfide (Bi 2 S 3 ) have been electrochemically deposited on indium–doped tin oxide substrates from aqueous solutions of Bi(NO 3 ) 3 , ethylene diamine tetraacetic acid (EDTA) and Na 2 S 2 O 3 . The structural properties of the films were characterized using X–ray diffraction and high–resolution transmission electron microscopy analyses. The film crystallizes in an orthorhombic structure of Bi 2 S 3 along with metallic bismuth. Thermal annealing of the prepared film in sulfur atmosphere improves its crystallinity and cohesion. The band gap values of the deposited film before and after annealing at 400 °C were found to be 1.28 and 1.33 eV, respectively.
New low-temperature phosphate glasses as a host for Europium Ions
2021
Abstract Artificial lightining, especially that of light emitting diodes, and telecommunications are penetrating every part of human lives daily. Different compositions phosphate glasses were suggested as a suitable host material for Eu3+ ions. Here rare earth metal ions act as luminescent centers also perturbing the bond order of phosphate glass network comprised of (PO4)3−, [−(O)PO3]2−, [−(O)2PO2]−, [−(O)3PO] structural units, which is indicated by Raman spectroscopy, confirming successful integration of aforementioned ions into the glass material. Glasses doped with Eu3+ ions show their typical photoluminescence spectra in low symmetry environment, consisting of the highest intensity 5D0…
Zn-substituted iron oxide nanoparticles from thermal decomposition and their thermally treated derivatives for magnetic solid-phase extraction
2020
Abstract Controlled thermal decomposition of zinc and iron acetylacetonates in the presence of oleic acid and oleylamine provided surfactant-capped magnetic nanoparticles with narrow size distribution and the mean diameter of ≈15 nm. The combined study by XRD, XRF and Mossbauer spectroscopy revealed three important features of the as-prepared nanoparticles. First, the actual ratio of Zn:Fe was considerably lower in the product compared to the initial ratio of metal precursors (0.14 vs. 0.50). Second, a pure stoichiometric Zn-doped magnetite system, specifically of the composition Zn0.37Fe2.63O4, with no signatures of oxidation to maghemite was formed. Third, Zn2+ ions were distributed at bo…
Numerical modelling for the diameter increase of silicon crystals grown with the pedestal method
2021
Abstract The pedestal method is one of crucible-free crystal growth methods, that has been less researched than the well-known floating zone (FZ) method. However, the pedestal method may be a cost-effective alternative to FZ, if large diameter feed rods are available. The investigated system contains two electromagnetic inductors: high-frequency inductor for pedestal top surface melting and middle-frequency inductor for pedestal side heating. The present work describes recent advances in numerical modelling of heat transfer and phase boundaries in axially symmetrical approximation, neglecting the melt flow. The shape of high-frequency inductor was optimized with the algorithm of gradient de…
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
2011
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique
2018
Abstract Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
2019
Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
2017
Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…
Mathematical modelling of the feed rod shape in floating zone silicon crystal growth
2017
Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …