Search results for "PHOTOELECTRON"
showing 10 items of 458 documents
Influence of modification time and high frequency ultrasound irradiation on self-assembling of alkylphosphonic acids on stainless steel : electrochem…
2015
International audience; Self-assembly of alkylphosphonic acids on stainless steel was investigated under different conditions. Four different alkylphosphonic acids exhibiting alkyl chain of various size were synthesized and studied: butylphosphonic acid (C4P), octylphosphonic acid (C8P), decylphosphonic acid (C10P), and hexadecylphosphonic acid (C16P). Electrochemistry experiments were extensively carried out in order to determine electrochemical surface blocking of adsorbed layers in function of grafting time. In term of surface blocking, an 8h modification time was optimal for all alkylphosphonic acids. Longer immersion times lead to degradation of adsorbed layers. For the first time, gra…
Synthesis and characterization of nanometric powders of UO2+x, (Th,U)O2+x and (La,U)O2+x
2009
This paper describes a new way of preparing nanometric powders of uranium oxide, to fit the needs of studies on UO{sub 2} oxidation, through the electrochemical reduction of U(VI) into U(IV). These powders can also be doped with radionuclides if necessary. The precipitation of oxides occurs in reducing and anoxic conditions. This original method makes it possible to synthesize nanometric UO{sub 2} powders with a calibrated size, as well as the Th- and La-doped UO{sub 2} powders with a predefined composition. The powder characterization by the X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron Microscopy shows the formation of spherical crystallites of UO{sub 2+x},…
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
1999
Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…
XPS analysis of sol-gel-generated mixed-oxide layers for biomedical application
2002
The excellent biocompatibility of titanium and its alloys is associated with the properties of their dense TiO2 layer on the surface. The adsorption of proteins of the body fluid to implant surfaces depends on the properties of the surface oxide layer, especially the electronic structure. Therefore, tailoring of the oxide layer is a method for influencing protein adsorption. In this study, titanium platelets are coated by the sol–gel process with mixed oxides containing the biocompatible elements Ti, Nb, Zr and Ta. In order to verify the composition of the produced oxide layer, which can differ from the adjusted precursor composition in the sol because of different reactivities of the precu…
Investigations of the corrosion protection of ultrathin a-C and a-C:N overcoats for magnetic storage devices
2004
Abstract The thickness-dependent corrosion protection of carbon overcoats for magnetic hard disks can be analyzed by collecting X-ray absorption near edge structure (XANES) spectra at the Co L3-edge. Co is the main constituent of the protected magnetic media underneath. The spectra of the Co absorption edge display a strong peak for pure metallic, non-oxidized Co. This peak splits up into several sub-structures for oxidized Co. Therefore, XANES spectra provide a straightforward method to determine the overcoat thickness, leading to closed coverage and corrosion protection of the underlying material. A similar approach was carried out by X-ray photoelectron spectroscopy (XPS). Standard a-C:N…
Structural and electrical properties of cerium tungstate: Application to methane conversion
2020
International audience; The catalytic efficiency as well as the electrical conduction mechanism of Ce2(WO4)3 powders synthetized for the oxidation of methane were investigated. Total and partial oxidation reactions were observed in the temperature range between 600 and 750 °C under CH4/dry air flux, for low CH4 concentrations. The electrical conduction mechanism is based on electron tunneling at low temperature (< 650 °C) and hopping over an ion barrier at high temperature, which favors the catalytic oxidation of CH4 in air; these mechanisms occur during the partial and total oxidation under weak gas flow. The occurrence of these types of conduction mechanism was related both to the distort…
Temperature and substrate influence on the structure of TiN O thin films grown by low pressure metal organic chemical vapour deposition
2000
Abstract This paper presents the growth and characterization of titanium oxinitride (TiN x O y ) films grown by low pressure metal organic chemical vapour deposition (LP-MOCVD). The film nitrogen content, obtained by Rutherford backscattering spectroscopy (RBS), increases as the growth temperature increases (from 23 at.% at 450°C to 46 at.% at 750°C). Below 550°C, the films do not show any X-ray diffraction pattern. Above 550°C, the deposited films present the (111) and (200) TiN textures. Films deposited on (100) Si exhibit a 2 θ shift to higher Bragg angles, depending on the N/O ratio. These shifts are explained by using a substitutional oxygen model. Moreover, the atomic structure of suc…
Elaboration and characterization of barium silicate thin films.
2008
International audience; Room temperature depositions of barium on a thermal silicon oxide layer were performed in ultra high vacuum (UHV). In-situ X-ray photoelectron spectroscopy (XPS) analyses were carried out as well after exposure to air as after subsequent annealings. These analyses were ex-situ completed by secondary ion mass spectrometry (SIMS) profiles and transmission electron microscopy (TEM) cross-sectional images. The results showed that after air exposure, the barium went carbonated. Annealing at sufficient temperature permitted to decompose the carbonate to benefit of a barium silicate. The silicate layer was formed by interdiffusion of barium with the initial SiO2 layer.
Experimental and theoretical evidence for substitutional molybdenum atoms in theTiO2(110)subsurface
2006
Molybdenum was deposited at room temperature on the ${\mathrm{TiO}}_{2}(110)$ surface in the 0--1.3 equivalent monolayer (eqML) range and was then annealed at $400\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ in order to reach a kind of equilibrium state. A threshold was found in the behavior of the deposit: below 0.2 eqML, substitutional molybdenum occurs in titanium sites located under the bridging oxygen atoms of the ${\mathrm{TiO}}_{2}(110)$ surface. In this position, molybdenum atoms are in a structural and chemical ${\mathrm{MoO}}_{2}$-like environment. Density-functional theory calculations show that this molybdenum site is actually the most stable one in …
A diamond (1 0 0) surface with perfect phase purity
2015
Abstract Diamond surfaces with (1 0 0) orientation and perfect phase purity regarding the coexistence of sp3 and sp2 bonding as well as near surface nitrogen implanted layers are repeatedly produced from one sample by a cycle of nitrogen implantation, etching in oxygen and wet chemical etching. Comprehensive surface studies carried out by X-ray photoelectron spectroscopy (XPS) involving a deconvolution of the C 1s peak into contributions of C sp3, C sp2 and C sp3(N) reveal the surface and near-surface phase and stoichiometry. It is demonstrated that efficient etching of nitrogen implanted diamond occurs by high temperature annealing in oxygen and a wet chemical treatment.