Search results for "PHOTOSENSITIVITY"
showing 10 items of 27 documents
Hydrogen-Related Paramagnetic Centers in Ge-Doped Sol-Gel Silica Induced by γ-Ray Irradiation
2006
We have studied the generation mechanisms of H(II) paramagnetic centers in Ge-doped silica by investigating up to 104 mol ppm sol-gel Ge-doped silica materials. We have considered materials with the same concentrations of Ge but that are produced by two different densification routes that give rise to different concentrations of Ge-related oxygen deficient centers (GeODC(II)). These centers are characterized by an optical absorption band at ∼5.2 eV (B2 β band) and two related emissions at ∼3.2 eV and ∼4.3 eV. The GeODC(II) content was estimated by absorption and emission measurements. The H(II) centers were induced by room temperature γ-ray irradiation and their concentration was determined…
Optical and photonic material hardness for energetic environments
2009
We studied the effects of dielectric change in the chemical composition and in the realization procedures under radiation exposure. We have compared the radiation effects on Ge-doped and F-doped fibers and preforms: the first play a crucial role in the photosensitivity property, the second improves the dielectric radiation hardness even at low concentrations. The use of different spectroscopic techniques (RIA, OA, EPR) allow the identification of the point defect formation mechanisms at the origin of the optical degradation properties.
Radiation effects on silica-based preforms and optical fibers-II: Coupling ab initio simulations and experiments
2008
International audience; Abstract—Experimental characterization through electron paramagnetic resonance (EPR) and confocal luminescence microscopy (CML) of a Ge-doped glass (preform and fiber) reveals the generation of several point defects by 10 keV X-ray radiation-induced attenuation: GeE', Ge(1), Ge(2), and Ge-ODC. The generation mechanisms of Ge-ODC and charged defects like GeE' centers are studied through ab initio simulation. Our calculations used a 108 atom supercell with a glass composition comparable to the Ge-doped core or to the pure-silica cladding of the canonical sample. The large size of our cell allows us to study the influence of the local environment surrounding the X-ODC d…
Radiation effects on silica-based preforms and optical fibers-I: Experimental study with canonical samples
2008
International audience; Prototype samples of preforms and associated fibers have been designed and fabricated through MCVD process to investigate the role of fluorine (F) and germanium (Ge) doping elements on the radiation sensitivity of silica-based glasses. We characterized the behaviors of these canonical samples before, during and after 10 keV X-ray irradiation through several spectroscopic techniques, to obtain global information (in situ absorption measurements, electron paramagnetic resonance) or spatially-resolved information (confocal microscopy, absorption and luminescence on preform). These tests showed that, for the Ge-doped fiber and in the 300–900 nm range, the radiation-induc…
Ultraviolet-induced paramagnetic centers and absorption changes in singlemode Ge-doped optical fibers
2009
We investigated the laser-energy-density dependence of absorption changes and paramagnetic centers induced by a cw Ar+ laser operating at 5.1 eV, in both unloaded and H-2-loaded single mode Ge-doped optical fibers. The induced absorption is measured in the blue and near ultraviolet spectral range by using the 3.1 eV photoluminescence, ascribed to Ge lone pair center (GLPC), as an in situ probe source. We find that the Ge (1) center (GeO4-) is induced upon UV exposure by electron trapping on GeO4 precursors, where the free electrons are most likely produced by ionization of GLPC. Ge (1) is responsible of optical transmission loss of the fiber in the investigated range. Hydrogen loading stron…
PV and magnetic field effects in poly(3-hexylthiophene)-fullerene cells doped with phthalocyanine soluble derivative
2007
An attempt was made to widen the photosensitivity spectral range of poly(3-hexylthiophene)-fullerene blend by adding an extra electron donor — a newly synthesized soluble phthalocyanine derivative (SnClPc) having the electron absorption band at 708 nm. As the electron acceptor, home-synthesised di(ethoxycarbonyl) methano-fullerene carboxylate (C 61 (CO 2 Et) 2 ) was used, and as the hole transporter — the regioregular poly 3-hexylthiophene (P3HT). The sandwich-type samples were prepared on an ITO glass substrate by coating it with a 30–50 nm thick PEDOT:PSS layer followed by a ~100 nm thick P3HT:C 61 (CO 2 Et) 2 :SnClPc blend. For the top electrodes In or Au were used. Spectral dependences …
Photosensitivity of silica glass with germanium studied by photoinduced of thermally stimulated luminescence with vacuum ultraviolet radiation
2003
Photosensitivity of the germanium-doped silica was studied through kinetics of recombination of the created defects in isothermal and thermally stimulated luminescence (TSL) regimes. The main observed luminescence contains bands mainly due to Ge oxygen deficient center. The maximum of photosensitivity corresponds to the high-energy part of the 7.6 eV band. The growth of TSL intensity is almost linear for the case of excitation through monochromatic light and growth with saturation in the case of excitation with white light. The efficiency of formation of TSL peaks increases with an increase of the temperature. The result was explained as multi-step process of photochemical dissociation and …
Twofold coordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2
2008
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern wr…
Enzymatically catalyzed synthesis of photocrosslinkable oligophenols
2000
The HRP-catalyzed oligomerization of cinnamoyl-hydroquinone-ester and cinnamoyl-4-hydroxyanilide led to the formation of soluble polyphenols. The oligomers were synthexized in water/1,4-dioxane and in water/acetone mixtures and characterized by NMR, FTIR and SEC. Upon UV treatment of the homogenoes films the polyphenols were crosslinked due to [2+2]-cycloadditions of the cinnamoyl functions.
Oxidative stress and mitochondrial dysfunction in Kindler syndrome
2014
This is an Open Access article distributed under the terms of the Creative Commons Attribution License.-- et al.