Search results for "Rutherford backscattering"
showing 10 items of 28 documents
Mechanism of Heavy Element Retention in Hydrated Layers Formed on Leached Silicate Glasses
1988
ABSTRACTWe have investigated the relationship between hydrated layer formation during aqueous corrosion of silicates and retention of heavy elements (Fe, REE, actinides). Our approach is based on the comparison of the dissolution behaviour of silicate glasses, silicate minerals implanted with increasing doses of lead ions (1×E+12 to 1×E+15 ions/cm2), sorption experiments on silica surfaces and direct precipitation of hydrosilicates. The characterization of reacted surfaces was performed by combining Rutherford backscattering spectrometry (RBS) for profiling heavy elements with Resonant Nuclear Reaction Analysis (RNRA) for hydrogen profilimetry. The accumulation of these elements does not ne…
Porous inorganic–organic hybrid material by oxygen plasma treatment
2011
In this paper, we present the pore formation on inorganic–organic hybrid material, ORMOCER©, by reactive ion etching. ORMOCERs are composed of inorganic backbone where organic side groups are attached by cross-linking. Etching of ORMOCER in oxygen plasma generates porous materials with different pore sizes depending on the etching parameters. In addition to planar films, this pore formation process is applicable to micro and nanostructures. Characteristics of porous materials are evaluated by contact angle measurement, scanning electron microscopy, Fourier transform infrared-attenuated total reflectance spectroscopy, time-of-flight elastic recoil detection analysis and Rutherford backscatte…
Variation of lattice constant and cluster formation in GaAsBi
2013
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out o…
Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
2015
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…
Ion beam analysis and alpha spectrometry of sources electrodeposited on several backings
1998
Abstract Alpha sources of several activities were prepared by electrodeposition of natural uranium onto four different backings: stainless steel, Ni, Mo and Ti. The influence of the activity, the type of backing, and the process of heating the source on the energy resolution of the spectra were investigated using alpha spectrometry and Rutherford Backscattering Spectrometry (RBS) techniques. Diffusion profiles of the radioactive deposits in the backings were obtained from RBS and related to the results using alpha spectrometry
Ion irradiation of AZO thin films for flexible electronics
2017
Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30–350 keV, 3 × 1015–3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a …
Formation of cobalt silicide from filter metal vacuum arc deposited films
2006
The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 deg…
A study of solar thermal absorber stack based on CrAlSiNx/CrAlSiNxOy structure by ion beams
2019
Renewable energies are foreseen as a major energy resource for next generations. Among several energy sources and technologies available, Concentrated Solar Power (CSP) technology has a great potential, but it needs to be optimised, in particular to reduce the costs, with an increase of the operating temperature and long term stability. This goal can be achieved by tailoring the composition and multilayer structure of films. In this work we present and discuss the results obtained from solar absorber coatings based on nitride/oxynitride structures. A four-layer film structure, W/CrAlSiNx(HA)/CrAlSiNxOy(LA)/SiAlOx, was deposited on stainless steel substrates using magnetron sputtering deposi…
Ordering effects in extreme high-resolution depth profiling with MeV ion beams
2012
Abstract The continuing development of depth profiling with MeV ion beam methods with depth resolutions in the nanometre, and even sub-nanometre, regime implies the resolved depth become comparable with the interatomic spacing. To investigate how short-range ordering influences depth profiles at these resolutions, we have employed a mathematical modelling approach. The radial, g ( r ) and depth distribution, g ( z ) functions were calculated for (1 0 0) surface, random and amorphous Si structures at 300 K produced using molecular dynamics simulations with the EDIP quasi-empirical potential. The results showed that short-range ordering lead to reduction of the scattering yield below the deep…
Characterization of alpha sources prepared by direct evaporation using Rutherford backscattering spectrometry
1997
Abstract Standardization of solutions containing alpha emitting nuclides by direct evaporation onto metal supports is a widely used technique due to its simplicity in providing good quantitative results. In order to avoid inhomogeneity in the deposition surface, polished stainless steel disks and a spreading agent are generally used. These sources are usually measured by alpha spectrometry using passivated implanted silicon detectors. The resolution of the source is a measure of the thickness and homogeneity of the evaporated layer. Rutherford backscattering of He+ and H+ was here used to measure directly this thickness and homogeneity. The results were in agreement with semiconductor detec…