Search results for "SAPPHIRE"
showing 10 items of 114 documents
X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy
2005
CdO thin films have been grown on a-plane (110), c-plane (0001), r-plane (012) and m-plane (100) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the pres…
Growth and characterization of self-assembled Cd1−xMgxO (0 ≤ x ≤ 1) nanoparticles on r-sapphire substrates
2014
In this work, the growth of isolated Cd1−xMgxO nanoparticles on r-sapphire substrates is extended to the entire range of Mg content (0 ≤ x ≤ 1) using the spray pyrolysis method. The sizes of the Cd1−xMgxO nanoparticles were in the ranges 4–6 nm and 15–30 nm (with a nanoparticle density of 1010 cm−2). The composition of the nanoparticles was determined using transmission electron microscopy energy dispersive X-ray analysis (TEM-EDAX), while the compound formation was confirmed using X-ray photoelectron spectroscopy. A systematic decrease in the a lattice parameter of Cd1−xMgxO on increasing the Mg content substantiated the successful incorporation of Mg2+ ions into the cubic CdO lattice. Sin…
Assessment of the out-plane and in-plane ordering of high quality ZnO nanorods by X-ray multiple diffraction
2013
Abstract ZnO nanorods grown on buffered and non buffered sapphire substrates have been investigated by X-ray multiple diffraction using Renninger scans of the ZnO(0001) and ZnO(0003) forbidden reflections. In this technique the diffracted X-ray beam is simultaneously diffracted by several sets of planes, providing information on the broadening in different directions, as well as from nanorods, and from the layer on which they grow. The intensities and angular widths of peaks obtained by azimuthal and omega scans have been analyzed, making a direct comparison with conventional measurements of the full width at half-maximum of symmetric and asymmetric reflections. The analysis leads to establ…
Structural analysis of CdO layers grown on r-plane sapphire (011¯2) by metalorganic vapor-phase epitaxy
2004
Abstract High-quality fully relaxed CdO layers have been grown directly on r -plane sapphire by metalorganic vapor-phase epitaxy. The crystalline structure has been analyzed by high-resolution X-ray diffraction. The structural quality of the (0 0 1) oriented layers degrades as the growth temperature decreases, process which is accompanied by the appearance of pyramidal grains as revealed by scanning force microscopy. The lattice parameters, perpendicular and parallel to the sample surface, have been determined by means of reciprocal space maps taken on asymmetrical reflections and measurements of symmetrical reflections at different azimuths. The epitaxial relationships between the CdO laye…
<title>Thermostimulated electronic and ionic processes in irradiated sapphire</title>
2003
Electronic and ionic thermostimulated (TS) relaxation (TSR) processes in nominally pure sapphire (α-Al2O3 grown with oxygen deficiency) have been investigated at 290 - 650 K by means of the TS current (TSC), ionic depolarization current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarization of the reduced sapphire wide (approximately 75 K) and asymmetric ionic dipolar TSDC peak at 590 K (disorientation of the anion vacancy-related dipoles) was detected. Above 450 - 500 K the anion vacancy hopping (migration) starts and their interaction with defects take place. This can lead to lattice dynamic disordering and anion vacancy diffusion-controlled processes in sapphi…
Luminescence and electron transport properties of GaN and AlN layers
2001
Abstract The transport properties of free charge carriers, photo- and cathodo-luminescence (CV) in GaN and AlN films obtained by MOCVD technique on sapphire and Si substrates, are investigated. The concentration of free charge carriers in GaN is of order 10 17 – 10 19 cm −3 whereas AlN thin films are insulating. The Hall mobility of electrons are 80– 140 cm 2 / V s ). In undoped GaN films the spectral composition of CL is close to photoluminescence (PL) when excited in the region of band–band transitions. The decay time constant of the 3.44 eV UV emission attributed to the bound exciton is considerably less than 1 ns , whereas the 3.26 eV violet (VI) band shows a slow hyperbolical decay ove…
Dissipative solitons for mode-locked lasers
2012
International audience; Dissipative solitons are localized formations of an electromagnetic field that are balanced through an energy exchange with the environment in presence of nonlinearity, dispersion and/or diffraction. Their growing use in the area of passively mode-locked lasers is remarkable: the concept of a dissipative soliton provides an excellent framework for understanding complex pulse dynamics and stimulates innovative cavity designs. Reciprocally, the field of mode-locked lasers serves as an ideal playground for testing the concept of dissipative solitons and revealing their unusual dynamics. This Review provides basic definitions of dissipative solitons, summarizes their imp…
Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique
2017
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
Determination of defect content and defect profile in semiconductor heterostructures
2011
In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.
Vapor phase epitaxy of Hg1−xCdxI2 on sapphire
1998
Abstract We demonstrate the possibility of growing Hg 1− x Cd x I 2 layers on sapphire substrates by vapor-phase epitaxy (VPE). The successful growth has been carried out using an α-HgI 2 polycrystalline source and a CdTe buffer layer grown on sapphire by metalorganic vapor phase epitaxy (MOVPE) before the Hg 1− x Cd x I 2 VPE growth. The Hg 1− x Cd x I 2 /sapphire 20–40 μm thick layers with a uniform composition in the range of x =0.2–0.6 were grown at 220–250°C for 70–300 h. The layers were studied by scanning electron microscopy, energy disperse X-ray analysis and X-ray diffractometry. Results on the layer characterization are reported and the effect of VPE conditions on the layer proper…