Search results for "SILICON"
showing 10 items of 1391 documents
Delocalized Nature of theEδ′Center in Amorphous Silicon Dioxide
2005
We report an experimental study by electron paramagnetic resonance (EPR) of E(')(delta) point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E(')(delta) center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.
A Test Circuit for GaN HEMTs Dynamic Ron Characterization in Power Electronics Applications
2019
Wide bandgap devices such as GaN HEMTs are a promising technology in the field of Power Electronics. Due to the physical properties of the Gallium nitride and the device design, they can outperform their Silicon counterparts for the design of highly efficient power switching converters. However, its design should face certain effects that can diminish its performance. One of such effect is the degradation mechanism known as dynamic onresistance (dynamic RON,), being its mitigation one of the main objectives in the design of the device. In this paper, a circuit is proposed for assessing if this effect is present in GaN transistors in power electronics applications. The circuit allows testing…
Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen
2012
Abstract Ru thin films were grown on hydrogen terminated Si, SiO 2 , Al 2 O 3 , HfO 2 , and TiO 2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium precursor and oxygen. The 4–20 nm thick films on these surfaces consisted of nanocrystalline hexagonal metallic ruthenium, regardless of the deposition temperature. At the lowest temperatures examined, 250–255 °C, the growth of the Ru films was favored on silicon, compared to the growth on Al 2 O 3 , TiO 2 and HfO 2 . At higher temperatures the nucleation and growth of Ru became enhanced in particular on HfO 2 , compared to the process on silicon. At 320–325 °C, no growth occurred on Si–H and SiO 2 -covered silicon. Res…
Application of silicon-based camera for measurement of non-homogeneous thermal field on realistic specimen surface
2019
Abstract The high-cost low-resolution infrared cameras operating in middle infrared spectral ranges are widely used to detect the thermal fields. In this study, a low-cost high-resolution silicon-based sensor camera operating in near infrared spectral ranges is used to perform the observation of the thermal fields on the realistic steel specimen surface. In near-infrared spectral ranges, a small temperature variation led to a large modification in the sensor illumination, inducing acquired images with over saturation or poor dynamic range of gray levels. To address this problem, an algorithm was used to precisely adjust the exposure time to acquire images with constant gray level whatever t…
Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen
2011
Ru films were grown by atomic layer deposition in the temperature range of 275―350°C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO 2 , ZrO 2 , and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20:1 aspect ratio. ZrO 2 promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO 2 with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8―…
Deposition of Pt and Sn doped CeOx layers on silicon substrate
2013
Abstract Radio Frequency Magnetron Sputtering is used to elaborate CeO x layers doped with platinum and/or tin on a SiO 2 /Si substrate. Morphology, chemical composition and crystallographic structures were investigated by Transmission Electron Microscopy. The presence of nanoparticles of mainly ceria and metallic platinum is exhibited.
Oxidation of magnesia-supported Pd-clusters leads to the ultimate limit of epitaxy with a catalytic function
2005
Oxide-supported transition-metal clusters and nanoparticles have attracted significant attention owing to their important role as components of model catalysts, sensors, solar cells and magnetic recording devices. For small clusters, functionality and structure are closely interrelated. However, knowledge of the structure of the bare cluster is insufficient as the interaction with the chemical environment might cause drastic structural changes. Here we show by ab initio simulations based on the density functional theory that the reaction with molecular oxygen transforms small, non-crystalline, magnesia-supported Pd-clusters to crystalline Pd(x)O(y) nano-oxide clusters that are in epitaxy wi…
Effect of silicon on corrosion resistance of Ti–Si alloys
2011
Abstract The corrosion resistance of Ti–Si alloys has been studied in acid solutions and the alloys exhibit a high resistance to corrosion. SEM examinations combined with EDAX allowed to conclude that the passive films on Ti–Si alloys are mainly composed of TiO 2 /SiO 2 oxides. XPS analysis indicated the formation of Si–O and Si–O–Ti bonds in the passive film, respectively corresponding to SiO 2 and Si-doping TiO 2 . The effect of silicon on the corrosion was correlated to the formation of a stable SiO 2 film, Si-doping on TiO 2 and the extended lattice imperfections formed along TiO 2 /SiO 2 grain boundaries and phase-boundaries. The calculated donor densities based on the point defect mod…
-ray-induced intrinsic defect processes in fluorine-doped synthetic SiO2 glasses of different fluorine concentrations
2009
Fluorine-doped synthetic SiO2 glass is suitable for investigating intrinsic defect processes in SiO2 glass because of the high radiation hardness and the low concentrations of defect precursors such as the strained Si O Si bonds and impurity-related network modifiers including SiOH, SiH, and SiCl groups. When the concentrations of the defect precursors are minimized by moderate fluorine doping into SiO2 glass, formation of oxygen vacancy–interstitial pairs (Frenkel pairs) is the primarily Co60γ-ray-induced defect process. However, heavy fluorine doping tends to degrade the radiation hardness and enhance the formation of the silicon and oxygen dangling bonds, suggesting the presence of anoth…
Electronic structure of poly(p-(disilanylene)phenylene)
1996
Abstract We present the geometrical and electronic structures of several isomers of poly(p-(disilanylene)phenylene), The structural analysis, performed at the 3-21G* level, shows that the isomers with the phenylene group perpendicular to the silicon backbone are the more stable conformations, displaying almost the same energy. The electronic properties, as obtained from the valence-effective Hamiltonian (VEH) band structure calculations, strongly depend on the disposition of the phenylene group into the polymeric backbone. The VEH predicts a wide and asymmetric absorption band in excellent agreement with UV experimental data.