Search results for "SILICON"
showing 10 items of 1391 documents
Simulated and measured temperature coefficients in compensated silicon wafers and solar cells
2019
Abstract In this paper we perform a thorough investigation of the temperature coefficients of c-Si solar cells and wafers, based on both experimental data and device simulations. Groups of neighboring wafers were selected from different heights of four high performance multicrystalline silicon ingots cast using different dopants concentrations and Si feedstocks; Three different target resistivities of compensated silicon ingots based on Elkem Solar Silicon (ESS®), which are purified through a metallurgical route, and one non-compensated reference ingot. The wafers were processed into Al-BSF and PERCT type solar cells, as well as into lifetime samples subjected to selected solar cell process…
Nanocrystal MOS with silicon-rich oxide
2001
By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
Fabrication of superconducting tantalum nitride thin films using infra-red pulsed laser deposition
2013
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on oxidized silicon (SiO$_{2} $) substrates exhibited a superconducting transition temperature of $\sim $ 8 K and 6 K, respectively. The topography of these films were investigated using atomic force and scanning electron microscopy, revealing fairly large area particulate free and smooth surfaces, while the structure of the films were investigated using standard $ \theta -2 \theta $ and glancing angle X-ray diffraction techniques. For films grown on MgO a fa…
Alumina particle reinforced TiO2 composite films grown by direct liquid injection MOCVD
2014
Abstract The use of a liquid injection delivery system to form composite films containing nanoparticles was investigated. Al 2 O 3 –TiO 2 films were grown on silicon substrates by direct liquid injection MOCVD (DLI-MOCVD) at 400 °C. The α-Al 2 O 3 nanoparticles (α-Al 2 O 3 NPs) dispersed in TiO 2 films resulted from co-deposition using colloidal α-Al 2 O 3 solution and titanium tetraisopropoxide as titanium precursor. Scanning electron microscopy coupled with EDS as well as Raman spectroscopy confirmed the presence of α-Al 2 O 3 NPs aggregates embedded in the TiO 2 matrix. The liquid injection system coupled with CVD technique can be promising to form composite films containing preformed na…
In situ measurement of the kinetic friction of ZnO nanowires inside a scanning electron microscope
2012
Abstract A novel method for measuring the kinetic friction force in situ was developed for zinc oxide nanowires on highly oriented pyrolytic graphite and oxidised silicon wafers. The experiments were performed inside a scanning electron microscope and used a nanomanipulation device as an actuator, which also had an atomic force microscope tip attached to it as a probe. A simple model based on the Timoshenko elastic beam theory was applied to interpret the elastic deformation of a sliding nanowire (NW) and to determine the distributed kinetic friction force.
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
2000
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…
Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation
2013
Amorphous hydrogenated carbon lms were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene hydrogen gas mixtures. The lms were irradiated with a nanosecond Nd:YAG laser working at the rst harmonics (λ1 = 1064 nm), the fourth harmonics (λ4 = 266 nm) or with a Nd:YVO4 laser working at the third harmonic (λ3 = 355 nm). The lms were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ1 = 1064 nm leads to graphitization and formation of the silicon carbide, because o…
Scanning electron microscopy analysis of defect clusters in multicrystalline solar grade silicon solar cells
2014
Solar cells from an identical commercial manufacturing unit have been investigated by electroluminescence to first detect the defect clusters. A further analysis has been done by scanning electron microscopy in secondary electron imaging mode to understand the propagation mechanism of defects. It appears that defect cluster boundaries can be very sharp or spread in the bulk with little apparent effect on the overall cell efficiency. And it is shown that grain boundaries act clearly as arrests to further propagation of these defects.
Micromoulding of three-dimensional photonic crystals on silicon substrates
2003
International audience; The growth of three-dimensional photonic crystals (PhCs) on patterned silicon substrates is reported. It is shown that deep trenches can be uniformly filled by a self-assembly of polymer microspheres, in a close-packed face-centred cubic lattice. The crystalline quality is compared for different channel widths. These observations are confirmed by optical reflectance measurements in the visible range, showing a bandwidth of enhanced reflection. The possibility to detach the PhC, i.e. to use the substrate as a mould, is also demonstrated. The potential of this approach for building PhC-based complex architectures is discussed.
Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon
2015
Abstract Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp 2 carbon arrangement. The average height and area for single grains have been analyzed for al…