Search results for "SURF"

Determination of Contact Potential Difference by the Kelvin Probe (Part II) 2. Measurement System by Involving the Composite Bucking Voltage

2016

Abstract The present research is devoted to creation of a new low-cost miniaturised measurement system for determination of potential difference in real time and with high measurement resolution. Furthermore, using the electrode of the reference probe, Kelvin method leads to both an indirect measurement of electronic work function or contact potential of the sample and measurement of a surface potential for insulator type samples. The bucking voltage in this system is composite and comprises a periodically variable component. The necessary steps for development of signal processing and tracking are described in detail.

Determination of Contact Potential Difference by the Kelvin Probe (Part I) I. Basic Principles of Measurements

2016

Abstract Determination of electric potential difference using the Kelvin probe, i.e. vibrating capacitor technique, is one of the most sensitive measuring procedures in surface physics. Periodic modulation of distance between electrodes leads to changes in capacitance, thereby causing current to flow through the external circuit. The procedure of contactless, non-destructive determination of contact potential difference between an electrically conductive vibrating reference electrode and an electrically conductive sample is based on precise control measurement of Kelvin current flowing through a capacitor. The present research is devoted to creation of a new low-cost miniaturised measuremen…

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

2006

Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O.…

2018

CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show CrN (1 1 1) epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture and the deposition temperature, thin films with different surface morphologies ranging from grainy rough textures to flat and smooth films were prepared. These parameters can also affect the CrN x system, with the film compound changing between semiconducting CrN and metallic Cr2N through the regulation of the nitrogen content of the gas flow and the deposition temperature at a constant deposition pressur…

The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges

2017

Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In re…

Tuning of interfacial perpendicular magnetic anisotropy and domain structures in magnetic thin film multilayers

2019

We investigate the magnetic domain structures and the perpendicular magnetic anisotropy (PMA) arising in CoFeB films interfaced with selected heavy metal (HM) layers with large spin Hall angles in HM/CoFeB/MgO (HM = W, Pt, Pd, W x Ta1−x ) stacks as a function of CoFeB thickness and composition for both as-deposited and annealed materials stacks. The coercivity and the anisotropy fields of annealed material stacks are higher than for the as-deposited stacks due to crystallisation of the ferromagnetic layer. Generally a critical thickness of MgO > 1 nm provides adequate oxide formation at the top interface as a requirement for the generation of PMA. We demonstrate that in stacks with Pt as th…

Quantitative analysis of magnetization reversal in Ni thin films on unpoled and poled (0 1 1) [PbMg1/3Nb2/3O3]0.68–[PbTiO3]0.32piezoelectric substrat…

2016

The field angle dependence of the magnetization reversal in 20 nm thick polycrystalline Ni films grown on piezoelectric (0 1 1) [PbMg1/3Nb2/3O3](0.68)-[PbTiO3](0.32) (PMN-PT) substrates is analysed quantitatively to study the magnetic anisotropy induced in the film by poling the piezosubstrate. While the PMN-PT is in the unpoled state, the magnetization reversal is almost isotropic as expected from the polycrystalline nature of the film and corresponding to an orientation ratio (OR) of 1.2. The orientation ratio is obtained by fitting the angular dependence of normalized remanent magnetization to an adapted Stoner-Wohlfarth relation. Upon poling the piezosubstrate, a strong uniaxial anisotr…

The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films

2017

Abstract Thin films of bismuth sulfide (Bi 2 S 3 ) have been electrochemically deposited on indium–doped tin oxide substrates from aqueous solutions of Bi(NO 3 ) 3 , ethylene diamine tetraacetic acid (EDTA) and Na 2 S 2 O 3 . The structural properties of the films were characterized using X–ray diffraction and high–resolution transmission electron microscopy analyses. The film crystallizes in an orthorhombic structure of Bi 2 S 3 along with metallic bismuth. Thermal annealing of the prepared film in sulfur atmosphere improves its crystallinity and cohesion. The band gap values of the deposited film before and after annealing at 400 °C were found to be 1.28 and 1.33 eV, respectively.

Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers

2014

Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…

Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapo…

2019

Abstract We have analysed the growth, morphological and structural characterization of Cd1-xZnxO thin films grown on r-sapphire substrates by atmospheric pressure metal organic chemical vapour deposition, mainly focusing on the Cd-rich rock-salt phase for its promising optical and technological applications. The evolution of the surface morphology and crystalline properties as a function of Zn content has been studied by means of high resolution x-ray diffraction and electron microscopy techniques. Monocrystalline (002) single-phase cubic films were obtained with Zn contents up to 10.4%, and with a low density of dislocations as a consequence of the optimized crystal growth process. Particu…