Search results for "Toe"
showing 10 items of 3824 documents
Silicon Single Electron Transistors with Single and Multi Dot Characteristics
2000
AbstractSilicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics o…
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Photonic Crystal‐Driven Spectral Concentration for Upconversion Photovoltaics
2014
The main challenge for applying upconversion (UC) to silicon photovoltaics is the limited amount of solar energy harvested directly via erbium-based upconverter materials (24.5 W m–2). This could be increased up to 87.7 W m–2 via spectral concentration. Due to the nonlinear behavior of UC, this could increase the best UC emission by a factor 13. In this paper, the combined use of quantum dots (QDs)—for luminescent down-shifting—and photonic crystals (PCs)—for reshaping the emission—to achieve spectral concentration is shown. This implies dealing with the coupling of colloidal QDs and PC at the high-density regime, where the modes are shifted and broadened. In the first fabricated all-optica…
First InGaN/GaN thin Film LED using SiCOI engineered substrate
2006
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…
Nonlinear vibrations and hysteresis of micromachined silicon resonators designed as frequency-out sensors
1987
Experimental observation of nonlinear vibrations and hysteresis of micromachined silicon resonators is reported. The experimental results are explained using a simple model in which the restoring force acting in the resonator contains a small cubic term. The effects will impose a limit to the maximum amplitude which can be excited while still maintaining reliability of these devices as frequency-out sensors.
ELECTRON-PHONON COUPLING IN HEAVILY DOPED SILICON
2001
The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
Photoconductivity and optical properties of silicon coated by thin TiO2 film in situ doped by Au nanoparticles
2013
Light trapping enhancement by plasmonic-active metal nanoparticles (NPs) is believed to be a promising approach to increase silicon-based solar cell efficiency. Therefore, we investigated TiO2 films in situ doped by Au NPs (TiO2:AuNPs) deposited by spin coating on a silicon substrate. Photoconductivity and optical properties of the TiO2:AuNPs/Si structures were studied in comparison with those of TiO2/Si reference samples. We found that an introduction of the 40–50 nm diameter AuNPs into the antireflective TiO2 layer deteriorates the antireflection properties and decreases the external yield of photogeneration of charge carriers. This is due to an increase of the layer reflection in the red…
Plasmonic layers based on Au-nanoparticle-doped TiO2 for optoelectronics: structural and optical properties.
2013
The anti-reflective effect of dielectric coatings used in silicon solar cells has traditionally been the subject of intensive studies and practical applications. In recent years the interest has permanently grown in plasmonic layers based on metal nanoparticles, which are shown to increase light trapping in the underlying silicon. In the present work we have combined these two concepts by means of in situ synthesis of Au nanoparticles in a dielectric matrix (TiO2), which is commonly used as an anti-reflective coating in silicon solar cells, and added the third element: a 10–20% porosity in the matrix. The porosity is formed by means of a controllable wet etching by low concentration HF. As …
Efficiency comparison between SiC- and Si-based active neutral-point clamped converters
2015
This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is hig…
Potential of amorphous Mo–Si–N films for nanoelectronic applications
2003
The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.