Search results for "Transistor"

showing 10 items of 234 documents

Mixed-type circuits with distributed and lumped parameters as correct models for integrated structures

1991

The technology of integrated circuits imposes upon their designers the need to deal with structures with distributed parameters. Figure 4.1 shows a schematic diagram of part of a digital integrated chip, consisting of an n MOS transistor with gate (G), drain (D) and source (S) as terminals, and its thin-film connection with the rest of the chip. This on-chip connection can be made by metals (Al, W), polycristaline silicon (polysilicon) or metal suicides (WSi 2 ). Alternative materials to oxide-passivated silicon substrates are saphire and gallium arsenide (Saraswat and Mohammadi [1982], Yuan et al. [1982], Passlack et al. [1990]).

Digital electronicsMaterials scienceSiliconbusiness.industryTransistorElectrical engineeringchemistry.chemical_elementSchematicIntegrated circuitChiplaw.inventionGallium arsenidechemistry.chemical_compoundchemistrylawbusinessElectronic circuit
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ELECTROCHEMICAL FABRICATION OF METAL/OXIDE/CONDUCTING POLYMER JUNCTIONS FOR ELECTRONIC DEVICES

2014

Electrochemical fabrication metal/oxide/conducting polymer junctions electronic devicesSettore ING-IND/23 - Chimica Fisica ApplicataSOLID STATE ELECTROLYTIC CAPACITORS FIELD EFFECT TRANSISTORS ANODIC OXIDES CONDUCTING POLYMERS PHOTOELECTROCHEMISTRY ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY PEDOT NIOBIUM OXIDE TITANIUM OXIDE TANTALUM OXIDE
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Si Donor Incorporation in GaN Nanowires

2015

With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…

Electron mobilityMaterials scienceNanowireBioengineeringNanotechnology02 engineering and technology01 natural sciencesElectrical resistivity and conductivity0103 physical sciencesGeneral Materials ScienceSpectroscopyComputingMilieux_MISCELLANEOUS010302 applied physics[PHYS]Physics [physics]business.industryMechanical EngineeringDopingGeneral ChemistryRadius021001 nanoscience & nanotechnologyCondensed Matter PhysicsOptoelectronicsField-effect transistor0210 nano-technologybusinessMolecular beam epitaxy
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Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet

2008

Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold filling. Peer Reviewed

Electron mobilityMaterials scienceOrganic compounds.Analytical chemistryDipolar broadeningGeneral Physics and AstronomySpin coatingHole mobilityElectronic density of statesConductivityOxidacióCompostos orgànicsElectrical resistivity and conductivity:FÍSICA [UNESCO]Molecular clustersOrganic compoundsOxidationDopingElectrical conductivityOxidation.Molecular nanomagnetMolecular magnetic clusterMolecular magnetism Nanostructured materialsSpin coatingDopingUNESCO::FÍSICAElectric conductivity.Thin film transistorsNanostructured materialsConductivitat elèctricaNanomagnet:Enginyeria electrònica::Microelectrònica [Àrees temàtiques de la UPC]Doping ; Electrical conductivity ; Electronic density of states ; Hole mobility ; Molecular clusters ; Molecular magnetism Nanostructured materials ; Organic compounds ; Oxidation ; Spin coating ; Thin film transistorsDensity of statesNanostructured materials.Hole transport layerMaterials nanoestructuratsOrder of magnitude
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From monolayer to multilayer N-channel polymeric field-effect transistors with precise conformational order

2012

Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schafer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.

Electron mobilityMaterials scienceTransistors ElectronicPolymersNanotechnologyThiophenesNaphthalenesTransistorslaw.inventionlawMonolayerElectronicDeposition (phase transition)General Materials Sciencemonolayer field-effect transistorchemistry.chemical_classificationbusiness.industrysemiconducting polymersMechanical EngineeringTransistorTransistor monolayer polymers orderPolymercharge transportchemistrylayered materialsMechanics of MaterialsN channelOptoelectronicsField-effect transistorbusiness
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Two-Step Solution-Processed Two-Component Bilayer Phthalocyaninato Copper-Based Heterojunctions with Interesting Ambipolar Organic Transiting and Eth…

2016

International audience; The two-component phthalocyaninato copper-based heterojunctions fabricated from n-type CuPc(COOC8H17)(8) and p-type CuPc(OC8H17)(8) by a facile two-step solution-processing quasi-Langmuir-Shafer method with both n/p- and p/n-bilayer structures are revealed to exhibit typical ambipolar air-stable organic thin-film transistor (OTFT) performance. The p/n-bilayer devices constructed by depositing CuPc(COOC8H17)(8) film on CuPc(OC8H17)(8) sub-layer show superior OTFT performance with hole and electron mobility of 0.11 and 0.02 cm(2) V-1 s(-1), respectively, over the ones with n/p-bilayer heterojunction structure with the hole and electron mobility of 0.03 and 0.016 cm(2) …

Electron mobilityMaterials scienceroom-temperaturematerials designsemiconducting natureairsolution-processability02 engineering and technologythin-film transistorsphthalocyanines010402 general chemistry01 natural sciences[ CHIM ] Chemical Sciencesgas sensorchemistry.chemical_compound[CHIM]Chemical Sciencesorganic heterojunctioncomparative performancesbusiness.industryAmbipolar diffusionMechanical EngineeringBilayerethanol sensorsfield-effect transistorsHeterojunction[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnology0104 chemical sciencesIndium tin oxidechemistryMechanics of MaterialsThin-film transistor[ CHIM.MATE ] Chemical Sciences/Material chemistryPhthalocyanineOptoelectronicsfunctional theory calculationsField-effect transistor0210 nano-technologybusinessambipolar OTFTn-type
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TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

1992

An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.

Energy balance equationMaterials sciencebusiness.industryApplied MathematicsNumerical analysisTransistorSemiconductor deviceComputer Science Applicationslaw.inventionComputational Theory and MathematicslawElectronic engineeringOptoelectronicsTransient (oscillation)Electrical and Electronic EngineeringbusinessCOMPEL - The international journal for computation and mathematics in electrical and electronic engineering
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<title>Evolution of optical links toward full-optical transparency</title>

2003

In this paper we review issues of evolution of optical networks towards their full optical transparency and present sequence of eliminating non-transparent elements out of optical links (networks). Architectures of optical commutators with electrical and optical cores have been presented, as well as a structure of OMO (optical-millimeter wave-optical) switching fabric. An example of pure al-optical switch, made by Luxcore, utilizing dispersion compensating elements, wavelength converters and and variable optical attenuators (VOA) operating entirely in optical domain without optical-electrical-optical (OEO) conversions, was quoted. We brought up an issue of all-optical 3R signal regeneration…

EngineeringOptical Transport Networkbusiness.industryOptical cross-connectOptical transistorElectronic engineeringPhysics::OpticsOptical performance monitoringbusinessOptical switchOptical add-drop multiplexerSignal regenerationOptical communications repeaterSPIE Proceedings
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Analysis of compressor architectures in MOS current-mode logic

2010

This paper is concerned with the design and the comparison of different compressor architectures for high performance multipliers in MOS current-mode logic (MCML). More specifically, three architectures have been designed for 3-2, 4-2 and 5-2 compressors and two architectures for 7-2 compressors. The various implementations for each type of compressor have been compared one another. This investigation indicates that the architectures based exclusively on three-level MCML gates are the most suitable for MCML implementation in terms of speed, power consumption and area. Design guidelines are provided to improve compressor performance. All the compressors were designed in a TSMC 180nm CMOS tec…

EngineeringPass transistor logicAND-OR-Invertbusiness.industryLogic familyData_CODINGANDINFORMATIONTHEORYLogic levelCompressors multipliers MOS current-mode logicSettore ING-INF/01 - ElettronicaLogic gateElectronic engineeringCurrent-mode logicHardware_ARITHMETICANDLOGICSTRUCTURESbusinessGas compressorPull-up resistor2010 17th IEEE International Conference on Electronics, Circuits and Systems
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HEMT for low-noise microwaves: CAD-oriented performance evaluation

1995

This paper shows how a graphic processing of low-noise HEMT's small signal parameters, allows evaluating and comparing the actual performance obtainable in front-end applications. HEMT's tradeoff charts which solve tradeoffs among the basic low-noise amplifier performance are reported. Figures of merit for microwave low-noise HEMT which represent a fast way of evaluating HEMT in actual working conditions and of selecting the proper transistor, are defined. As an example, the tradeoff charts and the figures of merit of two HEMT's (Fujitsu FHR02FH, Sony 2SK677) and a pseudomorphic-HEMT (Celeritek CFB001-03) are reported and compared with the data sheets. © 1995, IEEE. All rights reserved.

EngineeringRadiationbusiness.industryAmplifierTransistorElectrical engineeringCADCondensed Matter PhysicHigh-electron-mobility transistorCondensed Matter Physicscomputer.software_genreSettore ING-INF/01 - ElettronicaSignallaw.inventionlawElectronic engineeringFigure of meritComputer Aided DesignElectrical and Electronic EngineeringbusinesscomputerMicrowaveIEEE Transactions on Microwave Theory and Techniques
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