Search results for "Transistor"
showing 10 items of 234 documents
Automated Calculation Method to Determine the Output Power Based on the Frequency for Induction Heating IGBT Parallel Inverter
2007
The fact that some inverter topologies used in induction heating applications allow the soft switching working operation lets the progressive replacement of the MOSFET with the IGBT in high power inverters. This is due to two main reasons, the former is the IGBT reliability and the latter is the ratio defined as the price of the component per output power. In this article an automated method to determine the output power based on the frequency of an inverter build with different IGBT is described. To carry out this method is necessary to define the power cycle and to develop the calculation process which determines the energy losses in the working conditions of the resonant parallel inverte…
Frequency mapping in dynamic light emission with wavelet transform
2013
International audience; Dynamic photon emission microscopy is an e cient tool to analyse today's integrated circuit. Nevertheless, the reduction of transistor's dimensions leads to more complex acquisitions where many spots can be seen. A frequency characterization of the whole acquired area can help to have a better understanding of it. With that purpose in mind, a new methodology to draw frequency mapping of dynamic light emission acquisition is reported. It is fully automated and based on wavelet transform and autocorrelation function. Regarding the possible use in an industrial context, the suggested method can help to localize abnormal emission activity and it gives some perspectives o…
Noise and gain performance of PSA transistor series for personal communication systems vs. emitter number and operating conditions
1995
The booming market of communication system applications in the low microwave range put greater demands on the component performance at lower supply voltages and limited current consumption, as well as on production cost and integration level. In this work, we present the results of an extensive characterization activity carried out on several advanced polysilicon bipolar transistors as requested by the manufacturer. The devices were grouped according to their emitter finger number and were characterized over the 2-6 GHz frequency range in terms of noise, gain and scatterino parameters at different bias conditions. A comparative analysis has been performed to explore how the transistor perfo…
A Novel Approach to the Characterization and Modelig of Microwave Transistor Packages
1994
A novel approach to the characterization and modeling of microwave transistor packages through dedicated VNA measurements is presented. By combining a multi-step partitioning method with the use of purposely realized - but technologically simple - "package style" test devices, the proposed technique permits to derive in a systematic manner an equivalent circuit for both the transistor package and the test-fixture mount employed for the characterization. Since it does not rely on the indirect, optimization-based, conventional extraction methods of the literature, nor on a simplified circuit structure for the overall parasitic fourport embedding the active device, it is able to provide a high…
Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices
2018
In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. Quantitative surface potential measurements are crucial for understanding the operation principles of functional nanostructures in these electronic devices. Nevertheless, KPFM is prone to certain imaging artifacts, such as crosstalk from topography or stray electric fields. Here, we compare different amplitude modulation (AM) and frequency modulation (FM) KPFM methods on a reference s…
Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration
2016
Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different …
Liquid-phase alkali-doping of individual carbon nanotube field-effect transistors observed in real-time
2011
The carbon nanotube (CNT) is known to be very sensitive to changes in its surrounding environment. Our study is on the effects of mild, liquid-phase alkali-doping on electronic transport in individual CNTs. We find clear and consistent reversal from p- to n-type behavior, with all seven investigated CNT field-effect transistors (FETs) retaining a similar ON/OFF ratio and subthreshold slope. We have also measured the realtime electronic response during liquid-phase doping, and demonstrate detection of alkali cations with a signal response that ranges over more than three orders of magnitude. The doping is fully reversible upon exposure to oxygen, and the doping cycle is repeatable. We also c…
Nanofabrication of TaS2 conducting layers nanopatterned with Ta2O5 insulating regions via AFM
2013
It is demonstrated how local oxidation nanolithography performed with an atomic force microscope (AFM-LON) may be successfully employed for the nanopatterning of insulating regions of Ta2O5 on TaS2 ultrathin metallic layers. This provides a simple approach for the fabrication of electronic devices, such as single-electron transistors, at the nanoscale.
CMOS-compatible nanoscale gas-sensor based on field effect
2009
The integration of a solid state gas sensor of the metal oxide sensor type into CMOS technology still is a challenge because of the high temperatures during metal oxide annealing and sensor operation that do not comply with silicon device stability. In the presence of an external electric field sensor sensitivity can be controlled through a change of the Fermi energy level and consequently it is possible to reduce the operation temperature. Based in this effect, a novel field effect gas sensor was developed resembling a reversed insulated : gate field effect transistor (IGFET) with the thickness of gas sensing layer in the range of the Debye length (L D ). Under these conditions the control…
Digital power conversion system based on a sigma-delta modulator linear model
2005
This paper presents a new linear model for the sigma-delta (/spl Sigma//spl Delta/) modulator, based on modeling the nonlinear quantizer with a linear factor, and its input-to-output transfer function is given. The use of a 1-bit sigma-delta modulator in DC/DC power converter systems permits to implement a complete digital control. Results of an investigation from a prototype for a DC-DC converter are here reported. Using of a field programmable gate array allows implementing a simple variable control function. The modulator output produces a variable-frequency variable duty-ratio signal to control the switching power transistors.