Search results for "Transistor"
showing 10 items of 234 documents
Design and experimental validation of a high voltage ratio DC/DC converter for proton exchange membrane electrolyzer applications
2019
Abstract This paper deals with hydrogen production via water electrolysis, which is considered the most attractive and promising solution. Specifically, the use of renewable energy sources, such as wind electric power generators, is hypothesized for supplying the electrolyzer, aiming to strongly reduce the environmental impact. In particular, micro-wind energy conversion systems (μWECSs) are attractive for their low cost and easy installation. In order to interface the μWECS and the electrolyzer, suitable power conditioning systems such as step-down DC-DC converters are mandatory. However, due to the requested high conversion ratio between the DC bus grid, i.e. the output of a three-phase d…
Using Pulse Density Modulation to Improve the Efficiency of IGBT Inverters in Induction Heating Applications
2007
This paper analyses a high power (50 kW), high frequency (150 kHz) voltage fed inverter with a series resonant load circuit for industrial induction heating applications which is characterized by a full bridge inverter made with IGBT and the power control based on pulse density modulation (PDM). This power control strategy allows that the inverter works close to the resonance frequency for all output power levels. In this situation zero-voltage switching (ZVS) and zero-current switching (ZCS) conditions are performed and the switching losses are minimized. The results are verified experimentally using a prototype for induction hardening applications. A comparative study between the PDM and …
Organic Heterojunction Devices Based on Phthalocyanines: A New Approach to Gas Chemosensing.
2020
Organic heterostructures have emerged as highly promising transducers to realize high performance gas sensors. The key reason for such a huge interest in these devices is the associated organic heterojunction effect in which opposite free charges are accumulated at the interface making it highly conducting, which can be exploited in producing highly sensitive and faster response kinetics gas sensors. Metal phthalocyanines (MPc) have been extensively studied to fabricate organic heterostructures because of the large possibilities of structural engineering which are correlated with their bulk thin film properties. Accordingly, in this review, we have performed a comprehensive literature surve…
Structural and Electrical Transport Properties of Si doped GaN nanowires
2016
The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…
Porphyrins and BODIPY as Building Blocks for Efficient Donor Materials in Bulk Heterojunction Solar Cells
2017
International audience; Advances in the synthesis and application of highly efficient polymers and small molecules over the last two decades have enabled the rapid advancement in the development of organic solar cells and photovoltaic technology as a promising alternative to conventional solar cells, based on silicon and other inorganic semiconducting materials. Among the different types of organic semiconducting materials, porphyrins and BODIPY-based small molecules and conjugated polymers attract high interest as efficient semiconducting organic materials for dye sensitized solar cells and bulk heterojunction organic solar cells. The highest power conversion efficiency exceeding 9% has be…
Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors
2020
Amongst the different existing methods to passivate black phosphorus (BP) from environmental degradation, the noncovalent functionalization with perylene diimides (PDI) has been postulated as one of the most promising routes because it allows preserving its electronic properties. This work describes the noncovalent functionalization and outstanding environmental protection of BP with tailor made PDI having peri-amide aromatic side chains, which include phenyl and naphthyl groups, exhibiting a significantly increased molecule-BP interaction. These results are rationalized by density functional theory (DFT) calculations showing that the adsorption energies are mainly governed by van der Waals…
Surface plasmon effects on carbon nanotube field effect transistors
2011
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
2006
In this paper, we present our results on the distribution and generation of traps in a SiO 2 /A1 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO 2 /Al 2 O 3 interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al 2 O 3 . By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly g…
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
2022
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…