Search results for "Volt"
showing 10 items of 2187 documents
Ion irradiation of AZO thin films for flexible electronics
2017
Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30–350 keV, 3 × 1015–3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a …
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Multi-technique characterization of gold electroplating on silver substrates for cultural heritage applications
2017
Proceedings of the 12th European Conference on Accelerators in Applied Research and Technology (ECAART12).-- et al.
Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers
2018
Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…
Influence of beam conditions and energy for SEE testing
2012
GANIL/Applications industrielles; The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles: SRAMs and power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results. Testing to high fluence levels is required to detect rare events. This increases the probability of nuclear interactions. This is typically the case for power MOSFETs, which are tested at high fluences for single event burnout or gate rupture detection, and for single-event-upset (SEU) measurement in SRAMs below the direct ionization threshold. Differences between various test conditions (…
Vacuum electrical breakdown conditioning study in a parallel plate electrode pulsed dc system
2019
Conditioning of a metal structure in a high-voltage system is the progressive development of resistance to vacuum arcing over the operational life of the system. This is, for instance, seen during the initial operation of radio frequency (rf) cavities in particle accelerators. It is a relevant topic for any technology where breakdown limits performance and where conditioning continues for a significant duration of system run time. Projected future linear accelerators require structures with accelerating gradients of up to 100 MV/m. Currently, this performance level is achievable only after a multimonth conditioning period. In this work, a pulsed dc system applying voltage pulses over paral…
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Manufacturing an active X-ray mirror prototype in thin glass
2015
Adjustable mirrors equipped with piezo actuators are commonly used at synchrotron and free-electron laser (FEL) beamlines, in order to optimize their focusing properties and sometimes to shape the intensity distribution of the focal spot with the desired profile. Unlike them, X-ray mirrors for astronomy are much thinner in order to enable nesting and reduce the areal mass, and the application of piezo actuators acting normally to the surface appears much more difficult. There remains the possibility to correct the deformations using thin patches that exert a tangential strain on the rear side of the mirror: some research groups are already at work on this approach. The technique reported he…
CEMS of insulators by use of gas-flow counters
1994
Gas-flow CEMS counters are usually designed in such a manner that the sample to be investigated is inserted into the counter and serves as the backing cathode. If the sample consists of an insulating material, serious problems are expected by charging-up effects similar to those appearing in Maze counters. These problems are discussed in detail. It could be shown by experiments with glass samples that their very low surface conductivity is sufficient to allow a defined operation of such gas-flow CEMS detectors. The electric field strength between the surface of the sample and the anode has to be equal or higher than that between the entrance window and the anode. This can be ensured by an a…