Search results for "Volt"
showing 10 items of 2187 documents
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
The MuPix System-on-Chip for the Mu3e Experiment
2016
Nuclear instruments & methods in physics research / A 845, 194 - 198 (2016). doi:10.1016/j.nima.2016.06.095
Ionizing radiation effects on Non Volatile Read Only Memory cells
2012
Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.
A design for an electromagnetic filter for precision energy measurements at the tritium endpoint
2019
We present a detailed description of the electromagnetic filter for the PTOLEMY project to directly detect the Cosmic Neutrino Background (CNB). Starting with an initial estimate for the orbital magnetic moment, the higher-order drift process of E×B is configured to balance the gradient-B drift motion of the electron in such a way as to guide the trajectory into the standing voltage potential along the mid-plane of the filter. As a function of drift distance along the length of the filter, the filter zooms in with exponentially increasing precision on the transverse velocity component of the electron kinetic energy. This yields a linear dimension for the total filter length that is exceptio…
Temperature effect on RPC performance in the ARGO-YBJ experiment
2009
The ARGO-YBJ experiment has been taking data for nearly 2 years. In order to monitor continuously the performance of the Resistive Plate Chamber detectors and to study the daily temperature effects on the detector performance, a cosmic ray muon telescope was setup near the carpet detector array in the ARGO-YBJ laboratory. Based on the measurements performed using this telescope, it is found that, at the actual operating voltage of 7.2kV, the temperature effect on the RPC time resolution is about 0.04ns/degrees C and on the particle detection efficiency is about 0.03%/degrees C. Based on these figures we conclude that the environmental effects do not affect substantially the angular resoluti…
Development of new CdZnTe detectors for room-temperature high-flux radiation measurements
2017
Recently, CdZnTe (CZT) detectors have been widely proposed and developed for room-temperature X-ray spectroscopy even at high fluxes, and great efforts have been made on both the device and the crystal growth technologies. In this work, the performance of new travelling-heater-method (THM)-grown CZT detectors, recently developed at IMEM-CNR Parma, Italy, is presented. Thick planar detectors (3 mm thick) with gold electroless contacts were realised, with a planar cathode covering the detector surface (4.1 mm × 4.1 mm) and a central anode (2 mm × 2 mm) surrounded by a guard-ring electrode. The detectors, characterized by low leakage currents at room temperature (4.7 nA cm−2 at 1000 V cm−1), a…
Heavy-Ion Induced Charge Yield in MOSFETs
2009
The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors irradiated with 10-keV X-rays and several different heavy ions. The obtained charge yield for the heavy ions is in average nearly an order of magnitude lower than for the X-rays for the entire range of measured electric fields.
Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique
2016
Abstract In this work we report on the results of electrical characterization of new CdZnTe detectors grown by the Boron oxide encapsulated Vertical Bridgman technique (B-VB), currently produced at IMEM-CNR (Parma, Italy). The detectors, with gold electroless contacts, have different thicknesses (1 and 2.5 mm) and the same electrode layout, characterized by a central anode surrounded by a guard-ring electrode. Investigations on the charge transport mechanisms and the electrical contact properties, through the modeling of the measured current–voltage ( I – V ) curves, were performed. Generally, the detectors are characterized by low leakage currents at high bias voltages even at room tempera…
Collection, cooling and delivery of ISOL beams
1992
Abstract The collection of an ISOL beam in a Penning trap using implantation on a surface that is subsequently manipulated so as to become part of an end electrode of a Penning trap and reionization of the implanted material by heat has already been very productive for high-precision nuclear-mass measurements, even though it is limited to elements that are surface ionizable and the collection efficiencies are never better than about 0.1%. More recently, in 1990 a Paul trap system for electric collection of ions was installed at the ISOLDE-3 facility and collection was demonstrated for a 60 kV beam of 132 Xe ions. The purpose of this test setup was to determine the relationship between phase…