Search results for "Wafer"

Improving the material quality of silicon ingots by aluminum gettering during crystal growth

2016

We present a method for the purification of silicon ingots during the crystallization process that reduces significantly the width of the low charge carrier lifetime region at the ingot top. The back-diffusion of impurities from the ingot top is suppressed by adding a small amount of pure aluminum into the silicon melt right at the end of the solidification. We study the aluminum gettering effect by instrumental neutron activation analysis (INAA) and Fei imaging. Furthermore, we present a model for aluminum gettering of Fe in the silicon ingot that is in agreement with literature data for aluminum gettering at lower temperature. The distribution of iron in the ingots with and without alumin…

Numerical modelling of the industrial silicon single crystal growth processes

2007

Silicon wafers produced from the silicon single crystals are the basic material for the manufacturing of various kinds of electronic devices determining the everyday life of the modern society. Silicon single crystals industrially are mainly grown by two methods - by the Czochralski and by the floating zone technique. Both of them involve various physical processes with complex interactions which makes the experimental optimization of the growth techniques a rather hard and expensive task. Therefore, mathematical modelling supported by the rapid increase of the computer power has become an effective means in the development of the industrial crystal growth. (© 2007 WILEY-VCH Verlag GmbH & C…

CdTe Nanocrystal Synthesis in SiO 2 /Si Ion‐Track Template: The Study of Electronic and Structural Properties

2020

Impurity analyses of silicon wafers from different manufacturing routes and their impact on LID of finished solar cells

2013

Summarizes the measurements of impurity concentrations in directionally solidified silicon ingots from different feedstocks. The substitutional Carbon and interstitial Oxygen are measured on as-sawn wafers using FTIR. Active iron concentration is mapped on a-Si:H passivated wafers. It is observed that these impurities present in Elkem Solar Grade Silicon (ESS™) concentrations are comparable to the standard polysilicon which are in the acceptable ranges for silicon for solar industry. The measured LID of the finished solar cells is also comparable.

UV-induced Degradation Study of Multicrystalline Silicon Solar Cells Made from Different Silicon Materials

2013

Abstract The effect of ultraviolet-induced degradation (UV-ID) on solar cells made from two different solar grade materials has been compared. By using identical wafer and cell production units, effects originating in the two materials; solar grade produced by the Elkem Solar method (ESS™) was compared to standard polysilicon solar cells. Silicon wafers were selected precisely from similar positions from respective silicon bricks to process identical standard solar cells. The quantum efficiency maps at particular laser wavelengths and IV parameters of all solar cells were measured before and after UV-ID to visualize defects sites in the solar cells and to observe the extent of degradation. …

Formation of cobalt silicide films by ion beam deposition

2006

Abstract Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.

Structural changes and distribution of accumulated tritium in the carbon based JET tiles

2011

Abstract In this study the tritium distribution and the effect of structural changes thereon have been analyzed in the bulk of the tile selected from the JET Mark II SRP divertor. Tritium content has been analyzed by the full combustion technique [1] . The structure has been investigated by the method of Scanning Electron Microscopy. Tritium depth profiles have been measured at different poloidal positions. A high specific activity of tritium (up to 156 MBq g −1 ) was found at the plasma-facing surface. At some tile positions up to 98–99% of the T can be in the surface slice of 1 mm thickness, whereas in other poloidal positions there can be more T in the bulk than at the surface. The struc…

Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip

2021

Abstract The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the active circuitry will allow to build modules with very narrow inactive regions between the sensors. Inactive edge regions of less than 5 μ m to the electronic circuitry could be achieved for 100 μ m thick sensors. The MALTA chip (Cardella et al., 2019) also offers the possibility to transfer data and power directly from chip to chip. Tests have been carried out connecting two MALTA chips directly using ultrasonic wedge wire bonding. Results from lab tests show that the data accumulated in…

Photon reconstruction in the ATLAS Inner Detector and Liquid Argon Barrel Calorimeter at the 2004 Combined Test Beam

2011

The reconstruction of photons in the ATLAS detector is studied with data taken during the 2004 Combined Test Beam, where a full slice of the ATLAS detector was exposed to beams of particles of known energy at the CERN SPS. The results presented show significant differences in the longitudinal development of the electromagnetic shower between converted and unconverted photons as well as in the total measured energy. The potential to use the reconstructed converted photons as a means to precisely map the material of the tracker in front of the electromagnetic calorimeter is also considered. All results obtained are compared with a detailed Monte-Carlo simulation of the test-beam setup which i…

First results from electrical qualification measurements on DEPFET pixel detector

2010

We report on the first results from a new setup for electrical qualification measurements of DEPFET pixel detector matrices. In order to measure the transistor properties of all pixels, the DEPFET device is placed into a benchtest setup and electrically contacted via a probecard. Using a switch matrix, each pixel of the detector array can be addressed individually for characterization. These measurements facilitate to pre-select the best DEPFET matrices as detector device prior to the mounting of the matrix and allow to investigate topics like the homogeneity of transistor parameters on device, wafer and batch level in order to learn about the stability and reproducibility of the production…