Search results for "Y-factor"

Complete characterization of low-noise devices at microwave frequencies: two alternative procedures for HEMTs

1995

Temperature Dependence of pHEMT-Based LNA Performance for VSAT Applications

1994

From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8-16 GHz frequency range, the noisy small-signal model of a pseudomorphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. An accurate noisy model has then been extracted by determining the circuit element values at the different temperatures. The trade-off performance of a pHemt-based LNA for VSAT receiver system applications has been investigated vs. frequency and temperature.

Typical Aspects of the Microwave Noise Performance of HEMTs at Decreasing Temperatures

1996

In analog signal processing at microwave frequencies the noise performance of active devices is of fundamental importance for the accurate design of low-noise amplifiers. To this aim, the determination of the four noise parameters F O , Γ O (complex variable) and Rn has to be accomplished together with the usual scattering parameter measurements vs. frequency. In addition, the dependence of the device performance vs. temperature is of interest for circuit applications characterized by harsh environmental conditions. In this work the noise behavior of high electron mobility transistors has been investigated by means of measurements and modeling in the 2-18 GHz frequency range and as a functi…

Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperatures

1998

Noise parameters are an electrical representation of the noise performance of transistors which is widely used in reliability studies as well as in the design of low-noise microwave amplifiers. Such parameters are usually determined by employing a complex indirect (standard) procedure based on multiple noise figure measurements and appropriate data processing techniques. We report here two altemative and rapid methods used to perform the complete noise characterization of HEMT's at decreasing temperatures over the 6 to 18 GHz frequency range. The results show a very satisfactory agreement.among the different procedures thus assessing the inherent consistency of the global approach to the pr…

Operation of transition-edge sensors with excess thermal noise

2006

The superconducting transition-edge sensor (TES) is currently one of the most attractive choices for ultra-high resolution calorimetry in the keV x-ray band, and is being considered for future ESA and NASA missions. We have performed a study on the noise characteristics of Au/Ti bilayer TESs, at operating temperatures around ~100 mK, with the SQUID readout at 1.5 K. Experimental results indicate that without modifications the back-action noise from the SQUID chip degrades the noise characteristics significantly. We present a simple and effective solution to the problem: by installing an extra shunt resistor which absorbs the excess radiation from the SQUID input, we have reduced the excess …

Computer-Aided Simultaneous Determination of Noise and Gain Parameters of Microwave Transistors

1979

A new method for the determination of noise and gain parameters of microwave linear two-ports (transistors) is presented. The method allows the simultaneous determination of the two parameter sets through a proper computer-aided procedure which processes the experimental data obtained from a measuring system employing noise meters and generators only. Experimental verifications carried-out on a microwave low noise transistor in S-band are reported.

Up to Date Version of a Computer-Driven Noise Figure Measuring System for the Simultaneous Determination of Noise, Gain and Scattering Parameters of …

1995

The complete characterization of microwave transistors in terms of (four) noise, (four) gain and scattering parameters sets ({N), {G) and [SI, respectively) vs. frequency and bias conditions (and also vs. decreasing temperature, if required) is the first and most important step to design low noise amplifiers (LNAs). The characterization of the device under test (DUT) in terms of [SI is friendly by means of commercial Automatic Network Analyzer; then the { G) set may be determined by computation.

On the noise resistance of field-effect transistors at microwave frequencies

2001

This paper presents a survey on the topical aspects of the noise resistance in field-effect transistors (FET) at microwave frequencies. Such noise parameter represents the sensitivity of the device noise figure to the departure from the minimum noise condition and is therefore important in all low-noise applications. The performance of the noise resistance in FETs has been reviewed since the first noise modeling analysis of short-gate devices were presented in the early '70s. The authors also comment and compare their own results on this subject as obtained by extensive experimental activity in the field of noisy device characterization vs. frequency, bias and temperature conditions.