Search results for "amorphous"

Magnetic Properties of Amorphous Metals

2005

Studies on atomic layer deposition of MOF-5 thin films

2013

International audience; Deposition of MOF-5 thin films from vapor phase by atomic layer deposition (ALD) was studied at 225-350 degrees C. Zinc acetate (ZnAc2) and 1,4-benzenedicarboxylic acid (1,4-BDC) were used as the precursors. The resulting films were characterized by UV-Vis spectrophotometry, Fourier transform infrared spectroscopy (FTIR), optical microscopy, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), isopropanol adsorption tests, and nanoindentation. It was found out that the as-deposited films were amorphous but crystallized in humid conditions at room temperature. The crystalline films h…

Relation between molecule ionization energy, film thickness and morphology of two indandione derivatives thin films

2016

Abstract Nowadays most organic devices consist of thin (below 100 nm) layers. Information about the morphology and energy levels of thin films at such thickness is essential for the high efficiency devices. In this work we have investigated thin films of 2-(4-[N,N-dimethylamino]-benzylidene)-indene-1,3-dione (DMABI) and 2-(4-(bis(2-(trityloxy)ethyl)amino)benzylidene)-2H-indene-1,3-dione (DMABI-6Ph). DMABI-6Ph is the same DMABI molecule with attached bulky groups which assist formation of amorphous films from solutions. Polycrystalline structure was obtained for the DMABI thin films prepared by thermal evaporation in vacuum and amorphous structure for the DMABI-6Ph films prepared by spin-coa…

Structural, electrical and optical properties of zinc‐iridium oxide thin films deposited by DC reactive magnetron sputtering

2014

ZnO-IrO2 thin films were deposited on glass by DC reactive magnetron sputtering at room tem-perature. Structural, electrical and optical properties were investigated as a function of iridium atomic concentra-tion in the films. XRD data shows that ZnO-IrO2 thin films are X-ray amorphous and Raman spectrum resembles the spectrum of IrO2, without any distinct features of wurtzite ZnO structure. The lowest film resistivity and the highest transmittance achieved in the present study were 1.4 × 10-3 Ωcm and 33% at 550 nm, respectively. However, resistivity and transmittance are inversely related to the iridium concentration in the films.

Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering

2015

Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range…

Influence of Co content on structural and magnetic properties of CoxFe84−xNb7B9 alloys

2003

Nanocrystallization of CoxFe84� xNb7B9 (x ¼ 17; 25, 33) alloys has been studied. Crystallization of specimens starts above 4501C. After annealing of specimens in the range 500–7001C, apart from amorphous component and BCC Fe-Co alloy, a non-magnetic component also appears, which is attributed to (Fe1� xCox)2Nb phase with a relative area of about 14%. Decrease of quadrupole splitting with annealing temperature indicates some possible ordering of the nonmagnetic phase. r 2002 Elsevier Science B.V. All rights reserved.

Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5Nb0.5)O3, Pb(Mg1/3Nb2/3)O3and Pb0.76Ca0.24TiO3films and ferroelectric/ relaxor…

2001

Abstract Thin films of relaxor materials, namely Pb(Sc0.5Ta0.5)O3 (PST), Pb(Sc0.5Nb0.5)O3 (PSN) and Pb(Mg1/3Nb2/3)O3 (PMN), and of Pb0.76Ca0.24TiO3 (PTC), which is a classical ferroelectric as bulk material, have been produced to examine whether nanocrystalline relaxor materials show influences in their properties if their grain size is reduced to dimensions known from their nanodomains and to investigate effects in a superlattice of nanocrystalline ferroelectric and relaxor films. At first amorphous films of the different materials were deposited onto a Ti/Pt coated Silicon (100) wafer by reactive rf-sputtering. Different grain sizes could be prepared by a controlled annealing process. The…

Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5nb0.5)O3 and Pb(Mg1/3Nb2/3)O3 films produced by RF-sputtering from ceramic tar…

2000

Abstract Nanocrystalline thin films of different relaxor materials, namely Pb(Sc0.5Ta0.5)O3 (PST), Pb(Sc0.5Nb0.5)O3(PSN), Pb(Mg1/3Nb2/3)O3(PMN) have been produced by RF-sputtering to investigate whether it will affect their dielectric properties if their grain size is reduced to the dimensions known from their nanodomains. The XRD shows that the amorphous film crystallizes in pyrochlore structure at lower temperatures and short times. Annealing at higher temperatures and far longer time intervals leads to an increasing amount of perovskite phase with a grain size in the nanometer range. These results including dielectric measurements will be presented and discussed.

Atomic layer deposition and characterization of biocompatible hydroxyapatite thin films

2009

Abstract Atomic layer deposition (ALD) was used to produce hydroxyapatite from Ca(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and (CH 3 O) 3 PO onto Si(100) and Corning (0211). Film crystallinity, stoichiometry, possible impurities and surface morphology were determined. The as-deposited films contained significant amounts of carbonate impurities however, annealing at moist N 2 flow reduced the carbonate content even at 400 °C. The as-deposited Ca–P–O films were amorphous but rapid thermal annealing promoted the formation of the hydroxyapatite phase. Mouse MC 3T3-E1 cells were used for the cell culture experiments. According to the bioactivity studies cell proliferation was enhanc…

Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

2016

In this paper we report a study of the effect of vacuum annealing at 400◦C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1 / f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing …