Search results for "amorphous"
showing 10 items of 790 documents
Correlation analysis of vibration modes in physical vapour deposited Bi 2 Se 3 thin films probed by the Raman mapping technique
2021
In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi2Se3 thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2g) and out-of-plane (A21g) Raman mode positions. For Bi2Se3 films deposited on quartz, experimental datapoints are scattered along the line with a slope of similar to 0.85, related to the distribution of hydrostatic strain. In contrast to quartz/Bi2Se3 samples, for graphene/Bi2Se3 heterostructures with the same thicknesses, an additional negative slope of …
New Electroactive Polymers with Electronically Isolated 4,7-Diarylfluorene Chromophores as Positive Charge Transporting Layer Materials for OLEDs
2021
The OLED materials were developed in the frame of project funded by the Research Council of Lithuania (grant No. S-LLT-19-2). B.Z. is thankful to the National Natural Science Foundation of China (No. 51773195), and the Research & Development Projects in Key Areas of Guangdong Province, China (No. 2019B010933001). We are also obliged to D. Volyniuk for measurements of the ionization potentials.
Structure and chemical bonds in reactively sputtered black Ti–C–N–O thin films
2011
The evolution of the nanoscale structure and the chemical bonds formed in Ti–C–N–O films grown by reactive sputtering were studied as a function of the composition of the reactive atmosphere by increasing the partial pressure of an O2+N2 gas mixture from 0 up to 0.4 Pa, while that of acetylene (carbon source) was constant. The amorphisation of the films observed by transmission electron microscopy was confirmed by micro- Raman spectroscopy, but it was not the only effect associated to the increase of the O2+N2 partial pressure. The chemical environment of titanium and carbon, analysed by X-ray photoemission spectroscopy, also changes due to the higher affinity of Ti towards oxygen and nitro…
Luminescence of unfused 95%SiO2–5%GeO2 amorphous films with fluorine additive: No evidence for presence of GeODC(I) defects found
2013
Abstract Photoluminescence (PL) of unfused amorphous germanosilicate films with fluorine additive is studied in 2–8.5 eV spectral range. Experiments are based on films deposited on silica substrates by means of the surface-plasma chemical vapor deposition (SPCVD). Films of about 100 μm in thickness with “high F” (~ 4.2 wt.%) and “low F” (~ 0.5 wt.%) fluorine content have been fabricated for the experiments. KrF (248 nm), ArF (193 nm) and F2 (157 nm) excimer lasers are used to pump PL. It is found that absorption and luminescence associated with germanium oxygen deficient centers (GeODCs) in “high F” and “low F” films differ. In the “high F” unfused film absorption coefficient of the band at…
Nd:YVO4 crystalline film grown by pulsed laser deposition
2009
Abstract We present the preliminary results obtained in the growth of thin films of Nd-doped YVO4 (YVO) by pulsed laser deposition (PLD) on amorphous substrate. The films were obtained by ablating bulk YVO crystals doped with Nd3+ ions with a Q-switched tripled Nd:YAG laser in a UHV chamber. The samples have been characterized both morphologically (with X-ray diffraction and atomic force microscope measurements) and spectroscopically, by measuring fluorescence spectra and lifetime.
Absorption and luminescence in amorphous SixGe1-xO2 films fabricated by SPCVD
2012
Abstract Optical absorption and photoluminescence of Ge-doped silica films fabricated by the surface-plasma chemical vapor deposition (SPCVD) are studied in the 2–8 eV spectral band. The deposited on silica substrate films of about 10 μm in thickness are composed as x·GeO2-(1-x)·SiO2 with x ranging from 0.02 to 1. It is found that all as‐deposited films do not luminesce under the excitation by a KrF (5 eV) excimer laser, thus indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of silicon containing (x
Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure
2021
The nature of the radiation-induced point defects in amorphous silica is investigated through online photoluminescence (PL) under high intensity ultrashort laser pulses. Using 1030 nm femtosecond laser pulses with a repetition rate of 1 kHz, it is possible to study the induced color centers through their PL signatures monitored during the laser exposure. Their generation is driven by the nonlinear absorption of the light related to the high pulse peak powers provided by femtosecond laser, allowing to probe the optical properties of the laser exposed region. The experiment is conducted as a function of the laser pulse power in samples with different OH contents. The results highlight the dif…
Unexpected Epitaxial Growth of a Few WS2 Layers on {11̅00} Facets of ZnO Nanowires
2016
Core–shell nanowires are an interesting and perspective class of radially heterostructured nanomaterials where epitaxial growth of the shell can be realized even at noticeable core–shell lattice mismatch. In this study epitaxial hexagonally shaped shell consisting of WS2 nanolayers was grown on {1100} facets of prismatic wurtzite-structured [0001]-oriented ZnO nanowires for the first time. A synthesis was performed by annealing in a sulfur atmosphere of ZnO/WO3 core–shell structures, produced by reactive dc magnetron sputtering of an amorphous a-WO3 layer on top of ZnO nanowire array. The morphology and phase composition of synthesized ZnO/WS2 core–shell nanowires were confirmed by scanning…
Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions
2014
Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron mi…
EPR characterization of erbium in glasses and glass ceramics
2020
Electron paramagnetic resonance (EPR) is a well-established spectroscopic technique for electronic structure characterization of rare-earth ion impurities in crystalline and amorphous hosts. EPR spectra of erbium-doped glass matrices and nanocomposites can provide information about local structure variations induced by changes in chemical composition or crystallization processes. Characterization possibilities of Er3+ ions in glasses and glass ceramics including direct EPR measurements, indirect investigations via secondary paramagnetic probes, and optically detected magnetic resonance techniques are considered in this article. ----/ / /---- This is the pre-print of the following article: A…