Search results for "amorphous"
showing 10 items of 790 documents
Holographic recording in amorphous chalcogenide thin films
2003
A review of the recent advances and developments in the practical application of chalcogenide materials is presented, focusing special attention on holography and lithography using amorphous chalcogenide thin films.
Holographic recording in amorphous chalcogenide semiconductor thin films
2003
Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.
Amorphous As–S–Se semiconductor resists for holography and lithography
2002
Abstract The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2 S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.
<title>Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography</title>
2001
The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
<title>Photo-induced structural changes in near-surface layers of chalcogenide semiconductors</title>
1997
Photoinduced structural changes in near-surface layers of amorphous As-Se and As-S films have been investigated using the microhardness method. Microhardness via indentation depth data for as-deposited, illuminated and aged in ambient atmosphere films is presented. The results obtained show that photoinduced increase in microhardness of surface layers up to approximately 1 - 1.5 micrometer are more pronounced in comparison with deeper layers. Increase in microhardness of the investigated films under exposure to atmosphere was also observed. Atmosphere-induced effect was more pronounced in the case of As-S films. Photo- and atmosphere-induced effects in the near-surface layers were found to …
Transparent amorphous memory cell: A bipolar resistive switching in ZnO/Pr0.7Ca0.3MnO3/ITO for invisible electronics application
2014
Abstract ZnO/Pr0.7Ca0.3MnO3 (ZnO/PCMO) amorphous thin films were grown on an indium-tin-oxide (ITO)/glass by pulsed laser deposition at room temperature. Interestingly, a stable bipolar resistive switching behavior of the ITO/ZnO/PCMO/ITO cell can be longer than 2.5 × 103 cycles. The on/off ratio of switching behaviors is as high as 104. The structure of ITO/ZnO/PCMO/ITO exhibits a high average transparency of 79.6% in the visible range with a maximum transparency of 84.6% at 590 nm wavelength. The conductive mechanism during switching cycling in our structure can be described by a trapped-control space charge limited current behavior. The ZnO/PCMO/ITO/glass structure shows a potential of t…
Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction
1990
Abstract A systematic study of the impedance behaviour of the anodic niobium oxide film/aqueous electrolyte interface was carried out using the lock-in technique at different signal frequencies. The dependence of both components of the impedance on the electrode potential and on frequency is analysed by taking into account the amorphous nature of the films. The lack of long-range order in these oxide layers modifies the physical picture in respect to the case of single crystal semiconductors. A new equivalent circuit has been assumed, based on recent theory of an amorphous semiconductor Schottky barrier. Such a new approach allows the characterization of the interface and the determination …
Photoinduced mass transport in low molecular organic glasses and its practical application in holography
2015
Abstract In this paper we present the synthesis and optical properties of amorphous low molecular compound 4-((4-(bis(5,5,5-Triphenylpentyl)amino)phenyl)diazenyl)benzoic acid. The surface relief gratings formation by polarization holography method on these thin films (thicknesses are 200–1700 nm) was shown. The dependence of the surface relief modulation on various parameters: recording exposure dose, the polarization state of the recording beams, the grating period and the film thickness of the material was demonstrated. Values of surface tension at the air-film before and after irradiation of the substance by polarized radiation were measured. The efficiency of surface relief formation in…
<title>Amorphous chalcogenide thin films as a media for holographic recording</title>
2004
The amorphous As2S3 and As40S15Se45 films as a recording media for optical holography and lithography were studied. The results on research of the transmission, surface-relief and Bragg reflection grating holographic recording and readout conditions are presented. The recording of transmission holographic gratings in As40S15Se45 films was performed by He-Ne (0.6328 μm) laser beam, while the redout of the diffraction efficiency was made at Bragg agle using diode (0.805 μm) laser lines. The Bragg reflection gratings in As2S3 films were recorded and studied by Ar+ laser line 0.5145 μm. The surface-relief modulated gratings with a period of 0.15 μm - 1 μm were recorded.© (2004) COPYRIGHT SPIE--…
Physical vapor deposition of Bi2S3 as absorber material in thin film photovoltaics
2013
Abstract In order to investigate alternative absorber materials for inorganic solar cells, thin films of bismuth trisulfide (Bi2S3) were deposited under high vacuum conditions by the thermal evaporation method from compound material. The effects of the substrate temperature during deposition on the structural, stoichiometric, optical and electrical properties were investigated. Polycrystalline thin films close to an ideal stoichiometry could be deposited for temperatures TSub = 80–290 °C; thereby a transition from rough needle-shaped particles with (hk0)-orientation parallel to the surface of the substrate towards block shaped grains with a preferred direction out of the surface could be ob…