Search results for "chemical vapor deposition"

showing 10 items of 199 documents

Cutting performance and indentation behaviour of diamond films on Co-cemented tungsten carbide

2000

Abstract Diamond films were grown by Hot Filament Chemical Vapour Deposition (HFCVD) on differently pretreated ISO-grade K10 cemented carbide (WC-5.8 wt.%Co) cutting inserts. Etching with diluted HNO3 and surface roughening by Murakami's reagent were used as substrate pretreatments. The adhesion of the films was evaluated by indentation tests. In order to obtain a reliable estimation of the adhesion by the slope of the crack radius–indentation load curves, a careful SEM measurement of the crack lengths was performed. Bare and diamond-coated cutting inserts were used for turning tests of Al2O3-reinforced aluminum alloy. The adhesion levels obtained from the indentation curves correlated well…

Materials scienceSynthetic diamondSettore ING-IND/22 - Scienza e Tecnologia dei MaterialiDiamond filmsSurface finishChemical vapor depositionengineering.materiallaw.inventionchemistry.chemical_compoundlawTungsten carbideIndentationMaterials ChemistryCutting performanceTungsten carbideSettore CHIM/03 - Chimica Generale e InorganicaMetal matrix compositeMetallurgyDiamondCutting performance; Tungsten carbide; Diamond films; CVD; Indentation behaviourSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsCVDSurfaces Coatings and Filmsbody regionschemistryCemented carbideengineeringIndentation behaviour
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Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…

2007

International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…

Materials scienceThickness measurementSiliconPhotoemission spectroscopyAnalytical chemistrychemistry.chemical_elementARXPS02 engineering and technologySubstrate (electronics)Chemical vapor deposition01 natural sciences0103 physical sciencesMaterials ChemistryTiO2Metalorganic vapour phase epitaxyThin filmThin filmSilicon oxide010302 applied physicsMetals and AlloysSurfaces and InterfacesInterface021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryMOCVD0210 nano-technologyLayer (electronics)
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Anisotropic and non-heterogeneous continuum percolation in titanium oxynitride thin columnar films

2002

International audience; We report the percolation behaviour of the conductivity of titanium oxynitride films grown by low-pressure metal-organic chemical vapour deposition, composed of TiNxOy mixed with TiO2. The usual DC parameters (t, s and Φc), obtained from the effective media theory equations, are compared to the universal values (s = sun while t < tun because of the film anisotropy). This is the first example of an electrical continuum percolation applied to columnar films with chemically similar conducting and insulating units (non-heterogeneous percolation) whose mixing is based upon the growth temperature during the film growth.

Materials scienceThin filmsMineralogychemistry.chemical_element02 engineering and technologyChemical vapor depositionConductivityNitride01 natural sciencesOxynitrideCondensed Matter::Materials ScienceElectrical resistivity and conductivityCondensed Matter::Superconductivity0103 physical sciencesChemical vapor depositionGeneral Materials ScienceMetalorganic vapour phase epitaxyThin film010306 general physicsAnisotropyTitaniumConductivityLow pressureCondensed matter physicsPercolation[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyCondensed Matter Physicschemistry[ CHIM.MATE ] Chemical Sciences/Material chemistry0210 nano-technologyTitanium
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&lt;br /&gt; Ga_2O_3 films alloyed with SnO_2 and treated by RF plasma: an interesting way for the development of transparent contacts for UV-emittin…

2016

International audience; Layers of Ga2O3 alloyed up to 15 at% with Sn4+ has been studied after treatment by RF plasma. An increased conductivity was measured which is an interesting step towards transparent contacts for UV-emitting photonics devices.

Materials sciencebusiness.industry02 engineering and technologyChemical vapor depositionPlasmaConductivity021001 nanoscience & nanotechnologyMass spectrometry01 natural sciences[SPI.MAT]Engineering Sciences [physics]/Materials010309 opticsTransmission electron microscopy0103 physical sciencesOptoelectronicsPhotonics0210 nano-technologybusinessAfter treatment13th International Conference on Fiber Optics and Photonics
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Nanocrystal memories for FLASH device applications

2004

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…

Materials sciencebusiness.industryElectronic Optical and Magnetic MaterialNAND gateNanotechnologyChemical vapor depositionNanocrystalReliabilityCondensed Matter PhysicsFlash memorySettore ING-INF/01 - ElettronicaFlash memoryElectronic Optical and Magnetic MaterialsThreshold voltageFlash (photography)NanocrystalMemory cellHardware_GENERALCharge trap flashMaterials ChemistryHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic Engineeringbusiness
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Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

2004

Abstract 3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700 °C. Trimethyl-gallium and N 2 were, respectively, used as the Ga source and the carrier gas. These newly presented 3D structures have a scepter-like shape and are composed of a long GaInP internal support (rods of tens of μm long and tens of nm diameter) capped by a micrometer size metallic (Ga,In) structure. These structures were characterized by the SEM, EDX and TEM techniques. High-resolution TEM shows that the support rods present a GaInP single crystal structure. A preliminary discussion about the growth step mechanism, based on the…

Materials sciencebusiness.industryNanowireNanotechnologyChemical vapor depositionCondensed Matter PhysicsInorganic ChemistryMicrometreNano-Materials ChemistryOptoelectronicsMetalorganic vapour phase epitaxyCrystalliteVapor–liquid–solid methodbusinessSingle crystalJournal of Crystal Growth
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Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

2015

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…

Materials sciencebusiness.industryPhotoconductivityIndium Nitride NanowiresWide-bandgap semiconductorNanowireTransportGeneral Physics and AstronomyNanotechnologyChemical vapor depositionlcsh:QC1-999MicrometrePhotoexcitationNanolithographySemiconductorsOptoelectronicsVapor–liquid–solid methodbusinesslcsh:PhysicsAIP Advances
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Carbon Nanotube Radio-Frequency Single-Electron Transistor

2004

We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.

Materials sciencebusiness.industryTransistorCoulomb blockadeNanotechnologyCharge (physics)Carbon nanotubeCondensed Matter PhysicsNoise (electronics)Atomic and Molecular Physics and Opticslaw.inventionCarbon nanotube field-effect transistorlawPlasma-enhanced chemical vapor depositionOptoelectronicsGeneral Materials ScienceRadio frequencybusinessJournal of Low Temperature Physics
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Micro-photoluminescence of Carbon Dots Deposited on Twisted Double-Layer Graphene Grown by Chemical Vapor Deposition

2021

Carbon-based nanomaterials, such as carbon dots (CDs) and graphene (Gr), feature outstanding optical and electronic properties. Hence, their integration in optoelectronic and photonic devices is easier thanks to their low dimensionality and offers the possibility to reach high-quality performances. In this context, the combination of CDs and Gr into new nanocomposite materials CDs/Gr can further improve their optoelectronic properties and eventually create new ones, paving the way for the development of advanced carbon nanotechnology. In this work, we have thoroughly investigated the structural and emission properties of CDs deposited on single-layer and bilayer graphene lying on a SiO2/Si …

Materials sciencechemistry.chemical_element02 engineering and technologyChemical vapor deposition010402 general chemistry01 natural sciencesNanomaterialslaw.inventionsymbols.namesakemicro-photoluminescencelawcarbon dotsGeneral Materials ScienceNanocompositebusiness.industryGrapheneBilayer021001 nanoscience & nanotechnology0104 chemical scienceschemistryRaman spectroscopysymbolsOptoelectronicstwisted bilayer grapheneAFM0210 nano-technologybusinessRaman spectroscopyBilayer grapheneCarbon
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Function of titanium oxide coated on carbon nanotubes as support for platinum catalysts

2015

This study describes the outcome of the synthesis of laboratory-made (HM) Pt monometallic, binary and ternary catalysts supported on TiO2/CNT (carbon nanotubes) and based on using the dry-mix method of organometallic chemical vapor deposition (OMCVD). These multicomponent catalysts were investigated and compared with commercial Johnson Matthey (JM) catalysts for electrochemical applications.

Materials sciencechemistry.chemical_elementCarbon nanotubeChemical vapor depositionCondensed Matter PhysicsElectrochemistryAtomic and Molecular Physics and OpticsCatalysisTitanium oxidelaw.inventionchemistryChemical engineeringlawCarbon nanotube supported catalystPlatinumTernary operationMathematical PhysicsPhysica Scripta
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