Search results for "conductors"
showing 10 items of 254 documents
Intrapulpal temperature changes during root surface irradiation with an 809-nm GaAlAs laser
2002
The aim of this study was to explore, in vitro, whether the irradiation of human root surfaces with a diode laser might induce nonphysiologic intrapulpal temperature elevations and, therefore, jeopardize pulp vitality.The pulps were removed from human maxillary and mandibular incisors extracted for periodontal reasons. The root canals were enlarged to an apical size #60 file. The teeth were radiographed with standard dental films and a millimeter grid to determine root thickness. The thickness of dentin between the root surface and the pulp in the irradiation areas was 1, 2, and 3 mm. To determine intrapulpal temperature changes during laser irradiation, 0.5-mm K-type thermocouples were ins…
Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots
2008
Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es
Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
2008
http://link.aip.org/link/?JAPIAU/104/033523/1
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
2007
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.
Optical active centres in ZnO samples
2006
Abstract In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk…
Electrochemical Deposition Mechanism for ZnO Nanorods: Diffusion Coefficient and Growth Models
2011
Fabrication of nanostructured ZnO thin films is a critical process for many applications based on semiconductor devices. So on understanding of the electrochemical deposition mechanism is also fundamental for knowing the optimal conditions on growth of ZnO nanorods by electrodeposition. In this paper the electrochemical mechanism for ZnO nanorods formation is studied. Results are based on the evolution of the diffusion coefficient using the Cotrell equation, and different growth models proposed by Scharifcker and Hills for nucleation and growth.
An experience of elicited inquiry elucidating the electron transport in semiconductor crystals
2016
In this study we report the results of an inquiry-driven learning path experienced by a sample of 10 electronic engineering students, engaged to investigate the electron transport in semiconductors. The undergraduates were first instructed by following a lecture-based class on condensed matter physics and then involved into an inquiry based path of simulative explorations. The students were invited by two instructors to explore the electron dynamics in a semiconductor bulk by means of Monte Carlo simulations. The students, working in group, had to design their own procedure of exploration, as expected in a traditional guided inquiry. But they experienced several difficulties on planning and…
Wannier90 as a community code: new features and applications
2019
Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, s…
Magnetic field-controlled 0−π transitions and their experimental signatures in superconductor-ferromagnet-superconductor junctions
2019
Superconductor-ferromagnet-superconductor Josephson junctions are known to exist in the $0$ and $\pi$ states with the transitions between them controlled by the temperature and ferromagnetic interlayer thickness. We demonstrate that these transitions can be controlled also by the external magnetic field directed perpendicular to the layers. By varying the ratio of diffusion coefficients in superconducting and ferromagnetic layers, these field-controlled transitions can be made detectable for arbitrary large value of the exchange energy in the ferromagnet. We also show that the $0$-$\pi$ transitions in the perpendicular field can be observed as the specific features of the flux-flow conducti…