Search results for "electronics"
showing 10 items of 4340 documents
Effects of high-energy electrons in advanced NAND flash memories
2016
We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.
Niobium Nitride Thin Films for Very Low Temperature Resistive Thermometry
2019
We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field. High sensitivity in tempertaure variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of the niobium nitride thin films can be tuned to adjust the optimal working temperature range. In the present experiment, we show the versatility of the NbN thin film technology through applications in very different low temperature use-cases. We demonstrate that thin film resistive thermometry can …
Un algorithme de gestion de collision efficace pour un NoC déployé sur multi-FPGA
2014
International audience; Les plateformes multi-FPGA sont les solutions les plus prometteuses pour l'émulation de MPSoCs (Multi-Processor System-on-Chip) à base de NoC (Network-on-Chip). Le déploiement d'un NoC de grande taille sur une plateforme multi-FPGA nécessite la mise en place d'interfaces pour la communication inter-FPGA. Des goulots d'étranglements apparaissent, ralentissant fortement les performances du système. Dans ce travail, nous proposons un algorithme de gestion de collision permettant de supprimer ces goulots d'étranglement. L'algorithme de gestion de collision est basé sur l'algorithme de backoff utilisé dans les réseaux informatiques. L'architecture proposée est constituée …
Experimental determination of the kurtosis of RF noise in microwave low-noise devices
2000
Abstract The degree of the Gaussian nature of the white noise present in microwave low-noise devices is experimentally investigated. The chosen experimental technique consists of simultaneously digitizing four versions of the noise which are amplified by four parallel independent amplifiers. The four independent signals are then used to compute the second, and, to a good approximation, the fourth moment of the noise. The ratio of the fourth moment to the square of the second moment is the kurtosis of the noise. Gaussian processes are characterized by a kurtosis equal to 3. A deviation from this value gives an indication about the degree of non-Gaussian nature of the noise. By using this tec…
HF Noise Measurements Based on Software Defined Radio Dual Receiver and Two Orthogonal Inverted Vee Antennas
2020
Increasing the data transfer rate in the High Frequency (HF) range involves enlarging the bandwidth of the channel from the standard value of 3 kHz to values of 6, 12, 24, 48 and even 96 kHz. Real-time evaluation of the noise power in the channel under such conditions is essential. This paper aims to implement an automated system for real-time measurement of noise in the HF range. It is composed of two Software Defined Radio (SDR) synchronized receivers and two orthogonal Inverted Vee antennas. Testing the system demonstrates its ability to distinguish between noise and signals generated as a result of human activity. Preliminary results of measurements performed in an urban location are co…
Skewness and kurtosis of 1/f noise in semiconductor devices
2000
An experimental investigation of the third and fourth moments of the 1/f noise of two different electronic devices is reported. The skewness and the kurtosis of the noise voltage data are estimated. Although the devices under investigation have similar noise power spectral density, the time waveforms are shown to have slightly different statistical properties. In both cases, a small deviation from Gaussian distribution is observed.
Langevin Approach to Understand the Noise of Microwave Transistors
2004
A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determin…
Influence Of The Model Parameters On The Noise Performance Of Double-polysilicon BJTs For Microwave LNA's
1997
In the recent post we have measured the noise and the scattering parameters of several series of double polysilicon BJT's over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. From the experimental data, a noisy circuit model has been extracted based on a T-equivalent network. By means of the correlation matrix techniques, novel analytical expressions of the noise parameters have been derived. As a second step, a sensitivity analysis has been performed for evaluating the influence of each model element on the noise performance. The results show how to improve the characteristics of such devices for a better performance when employe…
Signal to Noise Ratio of Silicon Photomultipliers measured in the Continuous Wave Regime
2014
We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function …
Temperature Dependence of pHEMT-Based LNA Performance for VSAT Applications
1994
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8-16 GHz frequency range, the noisy small-signal model of a pseudomorphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. An accurate noisy model has then been extracted by determining the circuit element values at the different temperatures. The trade-off performance of a pHemt-based LNA for VSAT receiver system applications has been investigated vs. frequency and temperature.