Search results for "element"
showing 10 items of 13601 documents
Fluence effect on ion-implanted As diffusion in relaxed SiGe
2005
A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique
2018
Abstract Silicon single crystal growth by the Czochralski (CZ) technique is studied numerically using non-stationary mathematical models which allow to predict the evolution of the CZ system in time, including Dash neck, cone and cylindrical growth stages. The focus is on the point defect dynamics, also considering the effect of the thermal stresses. During the cylindrical stage, the crystal pull rate is temporarily reduced as in experiments by Abe et al. The crystal radius and heater power change is explicitly considered in the calculations for crystal diameters of 50, 100 and 200 mm and the agreement with experiments is discussed.
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
2019
Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.
Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
2017
Abstract Simulations of 3D anisotropic stress are carried out in and oriented Si crystals grown by FZ and CZ processes for different diameters, growth rates and process stages. Temperature dependent elastic constants and thermal expansion coefficients are used in the FE simulations. The von Mises stress at the triple point line is ~5–11% higher in crystals compared to crystals. The process parameters have a larger effect on the von Mises stress than the crystal orientation. Generally, the crystal has a higher azimuthal variation of stress along the triple point line (~8%) than the crystal (~2%). The presence of a crystal ridge increases the stress beside the ridge and decreases it on the ri…
Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions
2018
This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…
Mathematical modelling of the feed rod shape in floating zone silicon crystal growth
2017
Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …
Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growth
2019
Abstract A mathematical model of global 3D heat transfer in floating zone silicon single crystal growth process is used to predict the shape of the open melting front of the feed rod. The model is validated using measurement data from research-scale growth experiments. Shape profiles of the open melting front are obtained from the feed rod leftover using a movable dial gauge. Azimuthal asymmetry of the rim of the open melting front is revealed in both simulations and measurements, quantitatively indicating the influence of the main slit of the inductor.
XUV diagnostic to monitor H-like emission from B, C, N, and O for the W7-X stellarator
2019
The “C/O Monitor” system for the Wendelstein 7-X (W7-X) stellarator is a dedicated spectrometer with high throughput and high time resolution (order of 1 ms) for fast monitoring of content of low-Z impurities in the plasma. The observed spectral lines are fixed to Lyman-α lines of H-like atoms of carbon (3.4 nm), oxygen (1.9 nm), nitrogen (2.5 nm), and boron (4.9 nm). The quality of the wall condition will be monitored by the measurements of oxygen being released from the walls during the experiments. The strong presence of carbon is an indication for enhanced plasma-wall interaction or overload of plasma facing components. The presence of nitrogen (together with oxygen) may indicate a poss…
Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity
2016
This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.