Search results for "impur"
showing 10 items of 349 documents
Optimization of impurity profile for p-n junction in heterostructures
2005
We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.
<title>Thermostimulated electronic and ionic processes in irradiated sapphire</title>
2003
Electronic and ionic thermostimulated (TS) relaxation (TSR) processes in nominally pure sapphire (α-Al2O3 grown with oxygen deficiency) have been investigated at 290 - 650 K by means of the TS current (TSC), ionic depolarization current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarization of the reduced sapphire wide (approximately 75 K) and asymmetric ionic dipolar TSDC peak at 590 K (disorientation of the anion vacancy-related dipoles) was detected. Above 450 - 500 K the anion vacancy hopping (migration) starts and their interaction with defects take place. This can lead to lattice dynamic disordering and anion vacancy diffusion-controlled processes in sapphi…
Influence of a nano phase segregation on the thermoelectric properties of the p-type doped stannite compound Cu(2+x)Zn(1-x)GeSe4.
2012
Engineering nanostructure in bulk thermoelectric materials has recently been established as an effective approach to scatter phonons, reducing the phonon mean free path, without simultaneously decreasing the electron mean free path for an improvement of the performance of thermoelectric materials. Herein the synthesis, phase stability, and thermoelectric properties of the solid solutions Cu_(2+x)Zn_(1–x)GeSe_4 (x = 0–0.1) are reported. The substitution of Zn^(2+) with Cu^+ introduces holes as charge carriers in the system and results in an enhancement of the thermoelectric efficiency. Nano-sized impurities formed via phase segregation at higher dopant contents have been identified and are l…
The behavior of the 180° domain walls in disordered dielectrics like KTaO3 : Li and KTaO3 : Nb
2003
We calculate the structure of 180° domain wall in disordered ferroelectrics with random site electric dipoles (i.e. those like K 1-x Li x TaO 3 , KTa 1-x Nb x O 3 , where Li + or Nb 5+ are off-center ions forming impurity dipoles). The calculation is performed on the base of the free energy functional of disordered dielectrics derived earlier [M. D. Glinchuk et al., Phase Transit., 2003 (to be published)] within the framework of a random field method. We obtain the domain wall thickness as a function of impurity dipole concentration n and temperature T. It is shown that in disordered ferroelectrics the domain wall is usually broader than in their ordered counterparts. The thickness increase…
Site symmetry approach in the supercell model of carbon-doped ZnO bulk
2017
Abstract Carbon-doped zinc oxide is one of promising materials for technological applications due to its ferromagnetism observed at room temperature. When using the hybrid DFT-HF Hamiltonian based on the PBE0 exchange-correlation functional for large-scale calculations on defective ZnO:C single crystal, we have shown that application of supercell model for carbon impurity located at O site of wurtzite-structured ZnO bulk results in the dependence of calculated formation energy of the point defect (Eform) on the selected site symmetry of the substituted atom in the supercell. For a more symmetric C3v site usually used for simulation of defective ZnO structures, values of formation energy per…
Tin-related double acceptors in gallium selenide single crystals
1998
Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…
High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
1993
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…
Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser
2009
Abstract Photosensitivity of SiO 2 –Al and SiO 2 –Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO 2 –Al and transient, life time about one hour, visible darkening in the case of SiO 2 –Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case …
EPR on Radiation-Induced Defects in SiO2
2014
Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (alfa-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.
Fenibuta piemaisījumu kvantitatīvas noteikšanas metodes optimizācija un validācija
2021
Kokina. P., zinātniskie vadītāji: Dr. ķīm. V. Bartkevičs (LU), Dr. ķīm. A. Bolotin (AS Olainfarm). Maģistra darbs, 147 lappuses, 184 attēli, 75 tabulas, 15 literatūras avoti, 16 pielikumi. Latviešu valodā. Maģistra darbā ir veikta divu piemaisījumu(4-amino-3-fenilbutānskābes etilestera hidrohlorīds un 4-fenil-2-pirrolidons) kvantitatīvas noteikšanas analīzes metodes optimizācija un validācija farmaceitiskā preperāta Noofen® aktīvajai farmaceitiskai vielai (AFV) fenibuts. Metodes optimizācija un validācija bija nepieciešama farmaceitiskā preparāta Noofen® kvalitātes kontroles vajadzībām. Fenibuta paraugi tika analizēti ar augsti efektīvo šķidruma hromatogrāfiju (AEŠH). Optimizācija tika vērs…